HD1760JL High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display PRELIMINARY DATA Features ■ STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 ■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS ■ LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION 1 Applications ■ HORIZONTAL DEFLECTION OUTPUT FOR DIGITAL TV, HDTV AND HIGH -END MONITORS 2 3 TO-264 Internal Schematic Diagram Description The device uses a Diffused Collector in Planar technology which adopts ”Enhanced High Voltage Structure” (EHVS1) that was developed to fit High-Definition CRT displays. The new HD product series features improved silicon efficiency, bringing updated performance to Horizontal Deflection output stages. Order codes Part Number Marking Package Packing HD1760JL HD1760JL TO-264 TUBE November 2005 rev.2 1/8 www.st.com 8 HD1760JL 1 Electrical ratings 1 Electrical ratings Table 1. Absolute Maximum Rating Symbol Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1700 V VCEO Collector-Emitter Voltage (IB = 0) 800 V VEBO Emitte-Base Voltage (IC = 0) 10 V Collector Current 36 A Collector Peak Current (tP < 5ms) 54 A Base Current 18 A IBM Base Peak Current (tP < 5ms) 27 A PTOT Total dissipation at Tc = 25°C 200 W TSTG Storage Temperature IC ICM IB TJ Table 2. Symbol RthJC 2/8 Parameter Max. Operating Junction Temperature -65 to 150 °C 150 °C Value Unit 0.625 °C/W Thermal Data Parameter Thermal Resistance Junction-Case____________________Max HD1760JL 2 2 Electrical Characteristics Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Table 3. Symbol Electrical Characteristics Parameter ICES Collector Cut-off Current (V BE = 0) IEBO Emitter Cut-off Current (IC = 0) VCEO(sus) Collector-Emitter Note: 1 Sustaining Voltage (IB = 0) VEBO VCE(sat) Note: 1 VBE(sat) Note: 1 hFE ts tf ts tf Test Conditions Min. Typ. VCE = 1700V VCE = 1700V___ _TC = 125°C VEB = 5V Max. Unit 0.2 2 mA mA 10 μA IC = 10mA 800 V Emitter-Base Voltage (IC = 0) IE = 10mA 10 V Collector-Emitter Saturation Voltage IC = 18A _____ IB = 4.5A 2 V Base-Emitter Saturation Voltage IC = 18A _____ IB = 4.5A 1.5 V DC Current Gain INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time IC = 2A _____ VCE = 5V IC = 18A ____ VCE = 5V IC = 12A ____ _ __ IB(on) = 1A ___ _ 30 5 8.5 fh = 32 KHz _IB(off) = -6.9A VCE(fly) = 1340V __VBE(off) = -2.7V 2.6 300 μs ns 2 110 μs ns LBB(on) = 0.8μH IC = 8A ____ _ __ fh = 100kHz IB(on) = 1.3A ___ _ _IB(off) = -5.8A VCE(fly) = 1300V __VBE(off) = -2.7V LBB(on) = 0.25μH Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%. 3/8 HD1760JL 3 Test circuit 3 Test circuit Figure 1. Power Losses and Inductive Load Switching Test Circuit Figure 2. Reverse Biased Safe Operating Area Test Circuit 4/8 HD1760JL 4 4 Package Mechanical Data Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 4 Package Mechanical Data Table 4. TO-264 Mechanical Data Figure 3. TO-264 Drawing 6/8 HD1760JL HD1760JL 5 5 Revision History Revision History Date Revision Changes 17-Oct-2005 1 Initial release. 03-Nov-2005 2 hFE value has been changed on Table 3 7/8 HD1760JL 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8