BU505 High Voltage NPN Multiepitaxial Fast-Switching Transistor Features ■ HIGH VOLTAGE CAPABILITY ■ VERY HIGH SWITCHING SPEED ■ HIGH RUGGEDNESS Applications ■ ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 3 1 SWITCH MODE POWER SUPPLIES 2 TO-220 Description The BU505 is a High Voltage NPN fastswitching transistor designed to be used in lighting application, like electronic ballast for fluorescent lamps. Internal Schematic Diagram It’s characteristics make also ideal for power supplies. Order Codes Part Number Marking Package Packing BU505 BU505 TO-220 TUBE August 2005 rev.4 1/10 www.st.com 10 BU505 1 Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1. Absolute Maximum Rating Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1500 V VCEO Collector-Emitter Voltage (IB = 0) 700 V Collector Current 2.5 A Collector Peak Current (tP < 5ms) 4 A Base Current 1 A IBM Base Peak Current (tP < 5ms) 2 A PTOT Total dissipation at Tc = 25°C 75 W TSTG Storage Temperature -65 to 150 °C 150 °C Value Unit 1.67 °C/W IC ICM IB TJ Table 2. Symbol RthJ-case 2/10 Max. Operating Junction Temperature Thermal Data Parameter Thermal Resistance Junction-Case____________________Max BU505 2 2 Electrical Characteristics Electrical Characteristics Table 3. Symbol ICES IEBO Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Parameter Test Conditions Collector Cut-off Current (V BE = 0) VCE = 1500V Emitter Cut-off Current (IC = 0) VEB = 5V VCEO(SUS) Collector-Emitter Note: 1 Sustaining Voltage (IB = 0) Typ. VCE = 1500V____TC = 125°C IC = 10mA Max. Unit 0.15 1 mA mA 1 mA 700 V L = 25mH Note: 1 Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 2A _____ IB = 0.9A VCE(sat) Min. IC = 2A _____ IB = 0.9A 1 V 1.3 V Note: 1 Is/b ts tf Second Breakdown Current VCE = 120V t = 220μs INDUCTIVE LOAD Storage Time Fall Time IB1 = 0.7A ___ Vbe(off) = -5A L = 200 μH Rbb = 0 2 A IC = 2A ____ _ Vclamp = 250V 2 350 μs ns Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%. 3/10 BU505 2 Electrical Characteristics 2.1 Typical Characteristics Figure 1. Safe Operating Area Figure 2. Derating Curve Figure 3. DC Current Gain Figure 4. Collector Emitter Saturation Voltage Figure 5. Base Emitter Storage Time Figure 6. Inductive Fall Time 4/10 BU505 Figure 7. 2 Electrical Characteristics Inductive Storage Time Figure 8. Reverse Biased SOA 5/10 3 Test Circuits 3 Test Circuits Figure 9. Inductive Load Switching Test Circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 3) Fast Recovery Rectifier 6/10 BU505 BU505 4 4 Package Mechanical Data Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 BU505 4 Package Mechanical Data TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 8/10 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 BU505 5 5 Revision History Revision History Date Revision Changes 05-Sep-2001 1 Initial release. 06-Jul-2005 2 Some value change in Table 3. 25-Jul-2005 3 New Template 19-Aug-2005 4 New ECOPACK® label 9/10 BU505 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10