ST8812FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features ■ HIGH VOLTAGE CAPABILITY ■ VERY HIGH SWITCHING SPEED ■ TIGHT hfe CONTROL ■ LARGE R.B.S.O.A. ■ FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING Applications ■ TO-220FP SWITCH MODE POWER SUPPLIES FOR CRT TV Description Internal Schematic Diagram The ST8812FP is manufactured using latest Multi Epitaxial Planar technology with high voltage capability. It shows wide R.B.S.O.A. and high switching speed thanks to its Cellular Emitter structure with planar edge termination and deep base diffusion. Order codes Part Number Marking Package Packing ST8812FP ST8812FP TO-220FP TUBE November 2005 rev.1 1/10 www.st.com 10 ST8812FP 1 Electrical Ratings 1 Electrical Ratings Table 1. Absolute Maximum Rating Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 1150 V VCEO Collector-Emitter Voltage (IB = 0) 600 V VEBO Emitte-Base Voltage (IC = 0) 15 V Collector Current 7 A Collector Peak Current (tP < 5ms) 12 A Base Current 4 A PTOT Total dissipation at Tc = 25°C 36 W Visol Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink 1500 V TSTG Storage Temperature -65 to 150 °C 150 °C IC ICM IB TJ Table 2. Max. Operating Junction Temperature Thermal Data Symbol Parameter Value Unit RthJ-case Thermal Resistance Junction-Case__________________ __Max 3.47 °C/W 2/10 ST8812FP 2 2 Electrical Characteristics Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Table 3. Symbol Electrical Characteristics Parameter ICES Collector Cut-off Current (V BE = 0) IEBO Emitter Cut-off Current (IC = 0) VCEO(sus) Collector-Emitter Note: 1 Sustaining Voltage (IB = 0) VCE(sat) Note: 1 VBE(sat) Note: 1 hFE ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time Test Conditions Min. Typ. VCE = 1150V VCE = 1150V Tc= 125°C VEB = 14V IC = 100mA IC = 4A _____ Max. Unit 1 2 mA mA 1 mA 600 V IB = 0.8A IC = 4A ___ __ IB = 1.2A 3 1.5 V V IC = 4A ____ _ IB = 0.8A 1.3 V IC = 1A _____ VCE = 5V IC = 5A _____ VCE = 1V IC = 5A _____ VCE = 5V IC = 4A ____ _ RBB= 0 VClamp = 480V V BE(off) = -5V IB1 = 0.8A _ LC= 220μH 25 5 4.5 9 1 60 1.6 120 μs ns (See Figure 8) Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%. 3/10 ST8812FP 2 Electrical Characteristics 2.1 Typical characteristicsTest circuit Figure 1. DC Current Gain Figure 3. Collector Emitter Saturation Voltage Figure 4. Base Emitter Saturation Voltage Figure 5. Inductive Load Storage Time Inductive Load Fall Time 4/10 Figure 2. Figure 6. DC Current Gain ST8812FP Figure 7. 2 Electrical Characteristics Reverse Biased S.O.A. 5/10 2 Electrical Characteristics Figure 8. 6/10 Inductive Load Switching Test Circuit ST8812FP ST8812FP 3 3 Package Mechanical Data Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/10 ST8812FP 3 Package Mechanical Data TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 8/10 L5 1 2 3 L4 ST8812FP 4 4 Revision History Revision History Date Revision 17-Nov-2005 1 Changes Initial release. 9/10 ST8812FP 4 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10