2STX1360 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features ■ VERY LOW COLLECTOR-EMITTER SATUARATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ IN COMPLANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE Applications TO-92 ■ EMERGENCY LIGHTING ■ LED ■ CCFL DRIVERS (BACK LIGHTING) ■ VOLTAGE REGULATION ■ RELAY DRIVER Internal Schematic Diagram Description The 2STX1360 is a NPN transistor manufactured using new “PB-HDC” (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Order Codes Part Number Marking Package Packing 2STX1360 X1360 TO-92 Bulk November 2005 rev.1 1/10 www.st.com 10 2STX1360 1 Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1. Absolute Maximum Rating Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 80 V VCEO Collector-Emitter Voltage (IB = 0) 60 V VEBO Emitter-Base Voltage 6 V Collector Current 3 A Collector Peak Current (tP < 5ms) 5 A Base Current 0.2 A IBM Base Peak Current (tP < 5ms) 0.4 A PTOT Total dissipation at Tc = 25°C 1 W Tstg Storage Temperature -65 to 150 °C 150 °C Value Unit 44.6 125 °C/W °C/W IC ICM IB TJ Table 2. Symbol RthJ-case RthJ-amb 2/10 (IC = 0) Max. Operating Junction Temperature Thermal Data Parameter Thermal Resistance Junction-Case_______________Max Thermal Resistance Junction-Ambient ______ ______Max 2STX1360 2 2 Electrical Characteristics Electrical Characteristics Table 3. Symbol Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 80 V 100 nA IEBO Emitter Cut-off Current (IC = 0) VEB = 6 V 100 nA VBE Base-Emitter Voltage VCE = 2 V 670 730 mV 150 210 300 500 mV mV 0.89 1.2 V 280 400 17 81 620 54 20 100 720 65 VCE(sat) Note: 1 VBE(sat) Collector-Emitter Saturation Voltage IC = 100 mA IC = 2 A __ _ IC = 3 A 630 IB = 100 mA __ _ IB = 150 mA Base-Emitter Saturation Voltage IC = 2 A __ _ IB = 100 mA Note: 1 hFE Note: 1 DC Current Gain tf RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time fT Transition Frequency td tr ts IC = 100 mA _ VCE = 2 V IC = 1 A _ VCE = 2 V VCC = 10 V IC = 3 A IB1 = - IB2 = 300 mA (see figure 8) IC = 0.1 A ___ VCE = 10 V 80 160 130 ns ns ns ns MHz Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%. 3/10 2STX1360 2 Electrical Characteristics 2.1 Typical Characteristics Figure 1. DC Current Gain Figure 3. Collector Emitter Saturation Voltage Figure 4. Base Emitter Saturation Voltage Figure 5. Resistive Load Switching Times Resistive LoadSwitching Times 4/10 Figure 2. Figure 6. DC Current Gain 2STX1360 Figure 7. 2 Electrical Characteristics Reverse Bised SOA 5/10 3 Test Circuits 3 Test Circuits Figure 8. Resistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resisitor 6/10 2STX1360 2STX1360 4 4 Package Mechanical Data Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 2STX1360 4 Package Mechanical Data TO-92 BULK SHIPMENT MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 4.32 4.95 b 0.36 0.51 D 4.45 4.95 E 3.30 3.94 e 2.41 2.67 e1 1.14 1.40 L 12.70 15.49 R 2.16 2.41 S1 0.92 1.52 W 0.41 0.56 V 5 O 0102782 C 8/10 2STX1360 5 5 Revision History Revision History Date Revision 17-Nov-2005 1 Changes Initial Release 9/10 2STX1360 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequ of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is gr by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are s to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products a authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Jap Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10