STN888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Features ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ D.C. CURRENT GAING, hFE > 100 ■ 5 A CONTINUOUS COLLECTOR CURRENT ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ AVAILABLE IN TAPE & REEL PACKING ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE 2 1 2 3 SOT-223 Applications ■ POWER MANAGEMENT IN PORTABLE EQUIPMENT ■ VOLTAGE REGULATION IN BIAS SUPPLY CIRCUITS ■ SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS ■ HEAVY LOAD DRIVER Internal Schematic Diagram Description The device is manufactured in low voltage PNP Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Order Codes Part Number Marking Package Packing STN888 N888 SOT-223 Tape & Reel August 2005 rev.2 1/9 www.st.com 9 STN888 1 Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1. Absolute Maximum Rating Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -45 V VCEO Collector-Emitter Voltage (IB = 0) -30 V VEBO Emitter-Base Voltage (IC = 0) -6 V Collector Current -5 A Collector Peak Current (tP < 5ms) -10 A Total dissipation at Tc = 25°C 1.6 W -65 to 150 °C 150 °C IC ICM PTOT Tstg Storage Temperature TJ Max. Operating Junction Temperature Table 2. Thermal Data Symbol Parameter Value Unit Rthj-amb Thermal Resistance Junction-Ambient__________________Max 78 °C/W 2/9 STN888 2 2 Electrical Characteristics Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Table 3. Symbol Electrical Characteristics Parameter ICBO Collector Cut-off Current (IE = 0) IEBO Emitter Cut-off Current (IC = 0) Test Conditions V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = -100μA V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = -100μA Note: 1 ____TC = 100°C VEB = -6V IC = -10mA Collector-Emitter Saturation Voltage IC = -500mA_____ IB = -5mA IC = -2A_____ IB = -50mA IC = -5A_____ IB = -250mA IC = -6A_ IC = -10A ___ Note: 1 hFE Note: 1 td tr ts tf Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Delay Time Rise Time Storage Time Fall Time IC = -6A ____ IB = -250mA -0.15 -0.35 -0.70 -0.7 -1.0 -1.2 -1.1 -1.2 IC = -500mA VCE = -1 V 100 200 IC = -5 A VCE = -1 V 70 100 IC = -5 A VCE = -1 V tj = 100°C IC = -8 A VCE = -1 V 55 IC = -10 A VCE = -1 V 35 (see Figure 7) μA V 200 VCC = -20V -10 -6 VCE = -1 V 120 IC = -3A ____ _ μA μA V IC = -10mA IB1 = -IB2 =-60mA -10 -100 -45 __ IB = -500mA IB = -50mA Unit V IB = -400mA IC = -2A ____ Max. -30 ____ IB = -250mA IC = -8A _____ VBE(sat) Typ. VCB = -30V VCB = -30V V(BR)CEO Collector-Emitter Note: 1 Breakdown Voltage (IB = 0) VCE(sat) Min. V V V V V V V V 300 100 180 160 250 80 220 210 300 100 ns ns ns ns Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%. 3/9 STN888 2 Electrical Characteristics 2.1 Typical Characteristics Figure 1. DC Current Gain Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage Figure 5. Switching Times Resistive Load Switching Times Resistive Load 4/9 Figure 2. Figure 6. DC Current Gain STN888 3 3 Test Circuits Test Circuits Figure 7. Resistive Load Switching Test Circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 5/9 4 Package Mechanical Data 4 STN888 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 STN888 4 Package Mechanical Data SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 V A1 10 o 10o 0.02 P008B 7/9 STN888 5 Revision History 5 8/9 Revision History Date Revision 03-Aug-2005 1 Changes Initial release. STN888 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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