STMICROELECTRONICS STGB6NC60H

STGB6NC60H
N-channel 600V - 7A - D2PAK
Very fast PowerMESH™ IGBT
General features
Type
VCES
VCE(sat)max
@25°C
IC
@100°C
STGB6NC60H
600V
<2.5V
7A
■
Low on voltage drop (Vcesat)
■
Low CRES / CIES ratio (no cross-conduction
susceptibility)
■
Very soft ultra fast recovery antiparallel diode
■
High frequency operation
3
1
D²PAK
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advaced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “H” identifies a family
optimized for high frequency application in order
to achieve very high switching performances
(reduced tfall) mantaining a low voltage drop.
Internal schematic diagram
Applications
■
High frequency inverters
■
SMPS and PFC in both hard switch and
resonant topologies
■
Motor drivers
Order codes
Part number
Marking
Package
Packaging
STGB6NC60HT4
GB6NC60H
D²PAK
Tape & reel
July 2006
Rev 2
1/14
www.st.com
14
Contents
STGB6NC60H
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
................................................ 9
STGB6NC60H
1
Electrical ratings
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGS = 0)
600
V
IC(1)
Collector current (continuous) at TC = 25°C
15
A
IC(1)
Collector current (continuous) at TC = 100°C
7
A
Collector current (pulsed)
21
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25°C
56
W
Tstg
Storage temperature
ICM(2)
– 55 to 150
°C
Tj
Operating junction temperature
Tl
Maximum lead temperature for soldering purpose
(for 10sec. 1.6 mm from case)
300
°C
Value
Unit
2
°C/W
62.5
°C/W
1. Calculated according to the iterative formula::
T
–T
JMAX
C
I ( T ) = -----------------------------------------------------------------------------------------------------C C
R
× V
(T , I )
THJ – C
CESAT ( MAX ) C C
2. Pulse width limited by max junction temperature
Table 2.
Symbol
Thermal resistance
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
3/14
Electrical characteristics
2
STGB6NC60H
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
Parameter
VBR(CES)
Collector-emitter
breakdown voltage
VCE(sat)
Collector-emitter saturation VGE = 15V, IC= 3A
voltage
VGE= 15V, IC= 3A, Tc= 125°C
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250 µA
ICES
Collector cut-off current
(VGE = 0)
VCE = Max rating,TC= 25°C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ±20V , VCE= 0
Forward transconductance
VCE = 15V, IC= 3A
gfs
Table 4.
Symbol
Cies
Coes
Cres
Qg
Test conditions
IC = 1mA, VGE = 0
Min.
Typ.
Max.
600
Unit
V
1.9
1.7
3.75
VCE = Max rating,TC= 125°C
2.5
V
V
5.75
V
10
1
µA
mA
±100
nA
3
S
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
VCE = 25V, f = 1MHz,
VGE = 0
VCE = 390V, IC = 3A,
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
ICL
Turn-off SOA minimum
current
Vclamp = 390V, Tj = 150°C,
RG = 10Ω, VGE = 15V
Qge
4/14
Static
VGE = 15V,
(see Figure 16)
Min.
Typ. Max.
Unit
205
32
5.5
pF
pF
pF
13.6
3.4
5.1
nC
nC
nC
19
A
STGB6NC60H
Electrical characteristics
Table 5.
Symbol
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 6.
Symbol
Eon(1)
Eoff(2)
Ets
Eon(1)
Eoff(2)
Ets
Switching on/off (inductive load)
Parameter
Test conditions
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 3A
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 3A
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390V, IC = 3A,
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390V, IC = 3A,
Min.
RG= 10Ω, VGE = 15V,
Tj = 25°C (see Figure 17)
RG = 10Ω, VGE = 15V,
Tj =125°C (see Figure 17)
RGE = 10Ω , VGE = 15V,
TJ = 25°C (see Figure 17)
RGE = 10Ω , VGE =15V,
Tj = 125°C (see Figure 17)
Typ.
Max.
Unit
12
5
612
ns
ns
A/µs
13
4.3
560
ns
ns
A/µs
40
76
100
ns
ns
ns
60
98
124
ns
ns
ns
Switching energy (inductive load)
Parameter
Test condictions
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 3A
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 3A
RG = 10Ω, VGE=15V,
Tj =25°C (see Figure 17)
RG = 10Ω, VGE = 15V,
Tj = 125°C (see Figure 17)
Min.
Typ.
Max.
Unit
20
68
88
µJ
µJ
µJ
37
93
130
µJ
µJ
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 17. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/14
Electrical characteristics
STGB6NC60H
2.1
Electrical characteristics (curves)
Figure 1.
Output characterisics
Figure 2.
Transfer characteristics
Figure 3.
Transconductance
Figure 4.
Collector-emitter on voltage vs
temperature
Figure 5.
Gate charge vs gate-source voltage Figure 6.
6/14
Capacitance variations
STGB6NC60H
Electrical characteristics
Figure 7.
Normalized gate threshold voltage
vs temperature
Figure 8.
Collector-emitter on voltage vs
collector current
Figure 9.
Normalized breakdown voltage vs
temperature
Figure 10. Switching losses vs temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
current
7/14
Electrical characteristics
Figure 13. Thermal impedance
8/14
STGB6NC60H
Figure 14. Turn-off SOA
STGB6NC60H
3
Test circuit
Test circuit
Figure 15. Test circuit for inductive load
switching
Figure 16. Gate charge test circuit
Figure 17. Switching waveform
Figure 18. Diode recovery time waveform
9/14
Package mechanical data
4
STGB6NC60H
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/14
STGB6NC60H
Package mechanical data
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
MIN.
4.4
TYP
4.6
0.173
TYP.
0.181
MAX.
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8
10
10.4
0.393
4.88
5.28
0.192
0.208
E1
G
0.368
0.315
8.5
0.334
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0º
0.015
4º
3
V2
1
11/14
Packaging mechanical data
5
STGB6NC60H
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
12/14
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STGB6NC60H
6
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
18-Nov-2005
1
First Release
27-jul-2006
2
New template
13/14
STGB6NC60H
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