STMICROELECTRONICS STK30NHS3LL

STK30NHS3LL
N-channel 30 V - 0.0028 Ω - 30 A - PolarPAK®
STripFET™ Power MOSFET plus monolithic Schottky
Preliminary Data
Features
VDSS
Type
RDS(on)
RDS(on)*Qg PTOT
STK30NHS3LL 30V <0.0035Ω 87.5nC*mΩ 5.2W
■
Ultra low top and bottom junction to case
thermal resistance
■
Reduced switching losses
■
Reduced conduction losses
■
Fully encapsulated die
■
100% Matte tin finish (in compliance with the
2002/95/EC european directive)
■
PolarPAK® is a trademark of VISHAY
PolarPAK®
Application
■
Figure 1.
Internal schematic diagram
Switching applications
Description
This product utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology
and a proprietary process for integrating a
monolithic Schottky diode. The new Power
MOSFET is optimized for the most important
demanding synchronous switch function in DCDC converter for computer and telecom.”
Table 1.
Bottom View
Top View
Device summary
Order code
Marking
Package
Packaging
STK30NHS3LL
K30NKS
PolarPAK®
Tape & reel
February 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
13
Contents
STK30NHS3LL
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
.............................................. 6
STK30NHS3LL
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
VDS
Parameter
Drain-source voltage (VGS = 0)
Value
Unit
30
V
VGS (1)
Gate-source voltage
± 16
V
VGS(2)
Gate-source voltage
± 18
V
ID (4)
Drain current (continuous) at TC = 25°C
30
A
ID
Drain current (continuous) at TC = 100°C
18.75
A
Drain current (pulsed)
120
A
Total dissipation at TC = 25°C
5.2
W
0.0416
W/°C
Single pulse avalanche energy
TBD
J
Operating junction temperature
Storage temperature
-55 to 150
°C
IDM (3)
PTOT (4)
Derating factor
EAS
(5)
TJ
Tstg
1. Continuous mode
2. Guaranteed for test time < 15ms
3. Pulse width limited by package
4. When mounted on FR-4 board of 1inch2, 2 oz. Cu. and ≤10sec
5. Starting TJ = 25°C, ID = 15A, VDD = 25V
Table 3.
Thermal data
Symbol
Parameter
Rthj-amb(1) Thermal resistance junction-amb
Typ.
Max.
Unit
20
24
°C/W
Rthj-c(2)
Thermal resistance junction-case (top drain)
0.8
1
°C/W
Rthj-c(3)
Thermal resistance junction-case (source)
2.2
2.7
°C/W
1. When mounted on FR-4 board of 1inch2, 2 oz. Cu. and ≤10sec
2. Steady state
3. Measured at Source pin when the device is mounted on FR-4 board in steady state
3/13
Electrical characteristics
2
STK30NHS3LL
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±16 V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 15 A
V(BR)DSS
Table 5.
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qgs1
Qgs2
RG
4/13
On/off
Min.
Typ.
Max.
30
V
VDS = Max rating,Tc=125°C
1
1
10
µA
µA
±100
nA
2.5
V
0.0028 0.0035
0.0033 0.004
VGS= 4.5 V, ID= 1 5A
Unit
Ω
Ω
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
VDS =25 V, f=1 MHz, VGS=0
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 30 A
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
VDD=15 V, ID = 12 A
VGS =4.5 V
(see Figure 8)
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
VGS =4.5 V
(see Figure 3)
Min.
Typ.
Max.
Unit
3200
760
46
pF
pF
pF
25
TBD
TBD
nC
nC
nC
TBD
nC
TBD
nC
TBD
Ω
STK30NHS3LL
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 7.
Symbol
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 15 V, ID= 15 A,
RG=4.7 Ω, VGS=4.5 V
(see Figure 2)
VDD=15 V, ID= 15 A,
RG=4.7 Ω, VGS=4.5 V
(see Figure 2)
Parameter
Test conditions
ISDM (1)
VSD (2)
Forward on voltage
ISD= 3 A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 30 A, di/dt = 100 A/µs,
VDD=20 V, TJ=150°C
trr
Qrr
IRRM
Typ.
Max.
Unit
TBD
TBD
ns
ns
TBD
TBD
ns
ns
Source drain diode
Source-drain current
Source-drain current
(pulsed)
ISD
Min.
(see Figure 7)
Min.
Typ.
TBD
30
TBD
Max.
Unit
30
120
A
A
0.7
V
ns
nC
A
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/13
Test circuits
STK30NHS3LL
3
Test circuits
Figure 2.
Switching times test circuit for
resistive load
Figure 4.
Test circuit for inductive load
Figure 5.
switching and diode recovery times
Unclamped inductive load test
circuit
Figure 6.
Unclamped inductive waveform
Switching time waveform
6/13
Figure 3.
Figure 7.
Gate charge test circuit
STK30NHS3LL
Figure 8.
Test circuits
Gate charge waveform
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
7/13
Package mechanical data
4
STK30NHS3LL
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/13
STK30NHS3LL
Package mechanical data
Table 8.
PolarPAK® (option “L”) mechanical data
mm
inch
Ref.
A
Min.
Typ.
Max.
Min.
Typ.
Max.
0.75
0.80
0.85
0.030
0.031
0.033
A1
0.05
0.002
b1
0.48
0.58
0.68
0.019
0.023
0.027
b2
0.41
0.51
0.61
0.016
0.020
0.024
b3
2.19
2.29
2.39
0.086
0.090
0.094
b4
0.89
1.04
1.19
0.035
0.041
0.047
b5
0.23
0.33
0.43
0.009
0.013
0.017
c
0.20
0.25
0.30
0.008
0.010
0.012
D
6
6.15
6.30
0.236
0.242
0.248
D1
5.74
5.89
6.04
0.226
0.232
0.238
E
5.01
5.16
5.31
0.197
0.203
0.209
E1
4.75
4.90
5.05
0.187
0.193
0.199
H1
0.23
H2
0.45
H3
0.31
H4
0.45
K1
4.22
K2
1.08
K3
1.37
0.054
K4
0.24
0.009
M1
4.30
4.50
4.70
M2
3.43
3.58
3.73
M3
0.22
0.009
M4
0.05
0.002
P1
0.15
0.20
0.25
T1
3.48
3.64
T2
0.56
0.76
T3
1.20
0.047
T4
3.90
0.154
T5
<
0°
0.009
0.56
0.018
0.51
0.012
0.56
0.018
4.37
4.52
0.166
0.172
0.178
1.13
1.18
0.043
0.044
0.046
0.169
0.177
0.185
0.135
0.141
0.147
0.006
0.008
0.010
4.10
0.137
0.143
0.161
0.95
0.022
0.030
0.037
0.007
0.014
10°
12°
0.41
0.18
0.36
10°
12°
0°
0.022
0.016
0.020
0.022
9/13
Package mechanical data
Figure 9.
10/13
PolarPAK® (option “L”) drawings
STK30NHS3LL
STK30NHS3LL
Package mechanical data
Figure 10. Recommended PAD layout
11/13
Revision history
5
STK30NHS3LL
Revision history
Document
Table 9.
12/13
Document revision history
Date
Revision
19-Feb-2008
1
Changes
Initial release
STK30NHS3LL
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