STMICROELECTRONICS STB185N55

STB185N55
STP185N55
N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220
MDmesh™ low voltage Power MOSFET
TARGET SPECIFICATION
General features
Type
VDSS
RDS(on)
ID
STB185N55
55V
3.5mΩ
120A(1)
STP185N55
55V
3.8mΩ
120A(1)
1. Value limited by wire bonding
■
Ultra low on-resistance
■
100% avalanche tested
3
3
1
1
2
TO-220
D2PAK
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronic unique “single feature size™“
strip-based process with less critical aligment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low onresistance, rugged avalanche characteristics and
low gate charge.
Internal schematic diagram
Applications
■
Switching application
– Automotive
Order codes
Part number
Marking
Package
2PAK
STB185N55
B185N55
D
STP185N55
P185N55
TO-220
August 2006
Rev 3
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
Packaging
Tape & reel
Tube
1/12
www.st.com
12
Contents
STB185N55 - STP185N55
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
................................................ 6
STB185N55 - STP185N55
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
55
V
VDS
Drain-source voltage (VGS=0)
VGS
Gate-source voltage
± 20
V
ID (1)
Drain current (continuous) at TC = 25°C
120
A
ID (1)
Drain current (continuous) at TC=100°C
120
A
IDM (2)
Drain current (pulsed)
480
A
PTOT
Total dissipation at TC = 25°C
315
W
Derating factor
2.1
W/°C
Peak diode recovery voltage slope
Tbd
V/ns
EAS (3)
Single pulse avalanche energy
Tbd
mJ
Tj
Operating junction temperature
storage temperature
-55 to 175
°C
dv/dt
Tstg
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting Tj=25°C, Id=60A, Vdd=40V
Table 2.
Thermal data
TO-220
Rthj-case
Thermal resistance junction-case
D²PAK
0.48
Unit
°C/W
Rthj-a
Thermal resistance junction-ambient max
62.5
--
°C/W
Rthj-pcb(1)
Thermal resistance junction-ambient max
--
35
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
--
°C
1. When mounted o inch² FR4 2oz Cu.
3/12
Electrical characteristics
2
STB185N55 - STP185N55
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
On/off states
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating,@125°C
IGSS
Gate body leakage current
VGS = ±20V
(VDS = 0)
V(BR)DSS
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 60A
D²PAK
TO-220
Table 4.
Symbol
Typ.
Max.
55
Unit
V
2
10
100
µA
µA
±200
nA
4
V
3.5
3.8
mΩ
mΩ
Max.
Unit
Dynamic
Parameter
Test conditions
Min.
Typ.
gfs (1)
Forward
transconductance
VDS = 15V , ID = 60A
Tbd
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
6200
1800
100
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 27V, ID = 60A
RG = 4.7Ω VGS = 10V
(see Figure 1)
Tbd
Tbd
Tbd
Tbd
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 44V, ID = 120A,
VGS = 10V, RG = 4.7Ω
(see Figure 2)
110
Tbd
Tbd
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/12
Min.
Tbd
nC
nC
nC
STB185N55 - STP185N55
Table 5.
Symbol
Electrical characteristics
Source drain diode
Parameter
Test conditions
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD(2)
Forward on voltage
ISD=120A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120A, VDD= 30V
ISD
trr
Qrr
IRRM
di/dt = 100A/µs, Tj=150°C
(see Figure 6)
Min.
Typ.
Tbd
Tbd
Tbd
Max.
Unit
120
480
A
A
1.5
V
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/12
Test circuit
STB185N55 - STP185N55
3
Test circuit
Figure 1.
Switching times test circuit for
resistive load
Figure 3.
Test circuit for inductive load
Figure 4.
switching and diode recovery times
Unclamped Inductive load test
circuit
Figure 5.
Unclamped inductive waveform
Switching time waveform
6/12
Figure 2.
Figure 6.
Gate charge test circuit
STB185N55 - STP185N55
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
7/12
Package mechanical data
STB185N55 - STP185N55
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8
10
E1
0.368
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0º
0.015
4º
3
V2
0.4
1
8/12
STB185N55 - STP185N55
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
9/12
Packaging mechanical data
5
STB185N55 - STP185N55
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
10/12
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB185N55 - STP185N55
6
Revision history
Revision history
Table 6.
Revision history
Date
Revision
Changes
14-Dec-2005
1
First version
19-Jun-2006
2
New template
01-Aug-2006
3
New value on Dynamic
11/12
STB185N55 - STP185N55
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