STB185N55 STP185N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh™ low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS(on) ID STB185N55 55V 3.5mΩ 120A(1) STP185N55 55V 3.8mΩ 120A(1) 1. Value limited by wire bonding ■ Ultra low on-resistance ■ 100% avalanche tested 3 3 1 1 2 TO-220 D2PAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “single feature size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications ■ Switching application – Automotive Order codes Part number Marking Package 2PAK STB185N55 B185N55 D STP185N55 P185N55 TO-220 August 2006 Rev 3 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. Packaging Tape & reel Tube 1/12 www.st.com 12 Contents STB185N55 - STP185N55 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 6 STB185N55 - STP185N55 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit 55 V VDS Drain-source voltage (VGS=0) VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25°C 120 A ID (1) Drain current (continuous) at TC=100°C 120 A IDM (2) Drain current (pulsed) 480 A PTOT Total dissipation at TC = 25°C 315 W Derating factor 2.1 W/°C Peak diode recovery voltage slope Tbd V/ns EAS (3) Single pulse avalanche energy Tbd mJ Tj Operating junction temperature storage temperature -55 to 175 °C dv/dt Tstg 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting Tj=25°C, Id=60A, Vdd=40V Table 2. Thermal data TO-220 Rthj-case Thermal resistance junction-case D²PAK 0.48 Unit °C/W Rthj-a Thermal resistance junction-ambient max 62.5 -- °C/W Rthj-pcb(1) Thermal resistance junction-ambient max -- 35 °C/W Tl Maximum lead temperature for soldering purpose 300 -- °C 1. When mounted o inch² FR4 2oz Cu. 3/12 Electrical characteristics 2 STB185N55 - STP185N55 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating, VDS = max rating,@125°C IGSS Gate body leakage current VGS = ±20V (VDS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 60A D²PAK TO-220 Table 4. Symbol Typ. Max. 55 Unit V 2 10 100 µA µA ±200 nA 4 V 3.5 3.8 mΩ mΩ Max. Unit Dynamic Parameter Test conditions Min. Typ. gfs (1) Forward transconductance VDS = 15V , ID = 60A Tbd S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 6200 1800 100 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 27V, ID = 60A RG = 4.7Ω VGS = 10V (see Figure 1) Tbd Tbd Tbd Tbd ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 44V, ID = 120A, VGS = 10V, RG = 4.7Ω (see Figure 2) 110 Tbd Tbd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/12 Min. Tbd nC nC nC STB185N55 - STP185N55 Table 5. Symbol Electrical characteristics Source drain diode Parameter Test conditions ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD=120A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, VDD= 30V ISD trr Qrr IRRM di/dt = 100A/µs, Tj=150°C (see Figure 6) Min. Typ. Tbd Tbd Tbd Max. Unit 120 480 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/12 Test circuit STB185N55 - STP185N55 3 Test circuit Figure 1. Switching times test circuit for resistive load Figure 3. Test circuit for inductive load Figure 4. switching and diode recovery times Unclamped Inductive load test circuit Figure 5. Unclamped inductive waveform Switching time waveform 6/12 Figure 2. Figure 6. Gate charge test circuit STB185N55 - STP185N55 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 7/12 Package mechanical data STB185N55 - STP185N55 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 E1 0.368 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 8/12 STB185N55 - STP185N55 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 9/12 Packaging mechanical data 5 STB185N55 - STP185N55 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 10/12 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB185N55 - STP185N55 6 Revision history Revision history Table 6. Revision history Date Revision Changes 14-Dec-2005 1 First version 19-Jun-2006 2 New template 01-Aug-2006 3 New value on Dynamic 11/12 STB185N55 - STP185N55 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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