STMICROELECTRONICS STL120NH02V

STL120NH02V
N-channel 20V - 0.0025Ω - 120A - PowerFLAT™ (6x5)
STripFET™ III Power MOSFET
Target Specification
General features
Type
VDSS
RDS(on)
ID
STL120NH02V
20V
<0.003Ω
28A(1)
1. Value limited by wire bonding
■
Improved die-to-footprint ratio
■
Very low profile package (1mm max)
■
Very low thermal resistance
■
Conduction losses reduced
■
2.5V gate drive
■
Switching losses reduced
■
Very low threshold device
(Chip scale package)
Internal schematic diagram
Description
The STL120NH02V utilizes the latest advanced
design rules of ST’s proprietary STripFET™
Technology. Thanks to a very low threshold, it is
ideal for Synchronous Buck Converter in point of
load brick module. The Chip-scaled
PowerFLAT™ package allows a significant board
space saving, still boosting the performance.
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STL120NH02V
L120NH02V
PowerFLATTM (6x5)
Tape & reel
September 2006
Rev 2
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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www.st.com
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Contents
STL120NH02V
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
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................................................ 6
STL120NH02V
1
Electrical ratings
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
20
V
VGS
Gate-source voltage
±8
V
ID
Drain current (continuous) at TC = 25°C
120
A
ID
Drain current (continuous) at
TC = 100°C
75
A
Drain current (pulsed)
480
A
Drain current (continuous) at TC = 25°C
28
A
PTOT(2)
Total dissipation at TC = 25°C
100
W
PTOT(3)
Total dissipation at TC = 25°C
4
W
0.03
W/°C
-55 to 175
°C
IDM (1)
ID(2)
Derating factor
Tj
Tstg
Operating junction temperature
storage temperature
1. Pulse width limited by safe operating area
2.
When mounted on FR-4 board of 1in², 2oz Cu. t<10sec
3. The value is rated according Rthj-C.
Table 2.
Rthj-case
Thermal data
Thermal resistance junction-case (drain) (Steady state)
Rthj-pcb(1) Thermal resistance junction-pcb max
1.56
°C/W
31.2
°C/W
1. When mounted on FR-4 board of 1in², 2oz Cu. t<10sec
Table 3.
Symbol
Avalanche characteristics
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max value
Unit
10
A
TBD
mJ
3/10
Electrical characteristics
2
STL120NH02V
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS =0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS =max rating,
TC = 125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 8V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 4.5V, ID = 14A
VGS = 2.5V, ID = 14A
Table 5.
Symbol
Test conditions
Typ.
Max.
20
Unit
V
1
10
µA
µA
±100
nA
0.60
V
0.0025
0.003
0.003
0.004
Ω
Ω
Typ.
Max.
Unit
Dynamic
Parameter
Test conditions
Min.
gfs (1)
Forward
transconductance
VDS = 16V, ID = 14A
TBD
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
TBD
TBD
TBD
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 10V, ID = 14A
RG = 4.7Ω VGS = 4.5V
(see Figure 1)
TBD
TBD
TBD
TBD
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 10V, ID = 28A,
VGS = 2.5V, RG = 4.7Ω
(see Figure 2)
33
TBD
TBD
Gate Input Resistance
f=1MHz Gate DC
Bias =0 Test Signal
Level =20mV
Open Drain
RG
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/10
Min.
1.8
44
nC
nC
nC
Ω
STL120NH02V
Electrical characteristics
Table 6.
Symbol
Source drain diode
Parameter
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Min.
Typ.
ISD = 28A, VGS = 0
Max.
Unit
28
112
A
A
TBD
V
Reverse recovery time
ISD = 28A, di/dt = 100A/µs,
Reverse recovery charge VDD = 16V
Reverse recovery current (see Figure 3)
TBD
TBD
TBD
ns
nC
A
Reverse recovery time
ISD = 28A, di/dt = 100A/µs,
Reverse recovery charge VDD = 16V, Tj = 150°C
Reverse recovery current (see Figure 3)
TBD
TBD
TBD
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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Test circuit
STL120NH02V
3
Test circuit
Figure 1.
Switching times test circuit for
resistive load
Figure 3.
Test circuit for inductive load
Figure 4.
switching and diode recovery times
Unclamped Inductive load test
circuit
Figure 5.
Unclamped inductive waveform
Switching time waveform
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Figure 2.
Figure 6.
Gate charge test circuit
STL120NH02V
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data
STL120NH02V
PowerFLAT™ (6x5) MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
0.80
0.83
0.93
0.031
0.032
0.036
A1
0.02
0.05
0.0007
0.0019
A3
0.20
A
b
0.35
D
4.20
3.43
E4
2.58
e
0.163
0.167
0.226
3.48
3.53
2.63
2.68
0.80
0.165
0.236
0.135
1.27
0.70
0.018
0.187
4.25
5.75
E2
0.015
0.196
6.00
E1
8/10
0.013
4.75
4.15
E
L
0.47
5.00
D1
D2
0.40
0.007
0.137
0.139
0.103
0.105
0.050
0.90
0.027
0.031
0.035
STL120NH02V
5
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
24-Jun-2005
1
New document
04-Sep-2006
2
New template, no content change
9/10
STL120NH02V
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