STB180N10F3 STP180N10F3 N-channel 100 V, 4.0 mΩ, 120 A STripFET™ Power MOSFET D2PAK, TO-220 Preliminary Data Features Type VDSS RDS(on) ID STB180N10F3 100 V 4.5 mΩ 120 A(1) STP180N10F3 100 V 4.8 mΩ 120 A(1) 1. Value limited by wire bonding ■ Ultra low on-resistance ■ 100% avalanche tested 3 3 1 1 2 TO-220 D2PAK Application ■ High current switching applications Description Figure 1. Internal schematic diagram This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order codes Marking Package Packaging STB180N10F3 180N10F3 D2PAK Tape and reel STP180N10F3 180N10F3 TO-220 Tube August 2008 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com 12 Contents STB180N10F3 - STP180N10F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Packaging mechanical data 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STB180N10F3 - STP180N10F3 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage (VGS=0) 100 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25°C 120 A ID (1) Drain current (continuous) at TC=100°C 120 A IDM (2) Drain current (pulsed) 480 A PTOT Total dissipation at TC = 25°C 315 W Derating factor 2.1 W/°C Peak diode recovery voltage slope TBD V/ns EAS (3) Single pulse avalanche energy TBD mJ Tj Operating junction temperature storage temperature -55 To 175 °C dv/dt Tstg 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting Tj=25°C, Id=60 A, Vdd=40 V Table 3. Symbol Rthj-case Thermal data Parameter TO-220 Thermal resistance junction-case D²PAK 0.48 Unit °C/W Rthj-a Thermal resistance junction-ambient max 62.5 -- °C/W Rthj-pcb(1) Thermal resistance junction-ambient max -- 35 °C/W 300 -- °C Tl Maximum lead temperature for soldering purpose 1. When mounted on FR-4 board, on 1inch², 2oz Cu. 3/12 Electrical characteristics 2 STB180N10F3 - STP180N10F3 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS= max rating, VDS= max rating,@125°C IGSS Gate body leakage current VGS = ±20 V (VDS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 60 A D²PAK TO-220 Table 5. Symbol Min. Typ. Max. 100 Unit V 2 10 100 µA µA ±200 nA 4 V 4.5 4.8 mΩ mΩ Max. Unit Dynamic Parameter Test conditions Min. Typ. gfs (1) Forward transconductance VDS = 15 V , ID = 60 A TBD S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 TBD TBD TBD pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 44 V, ID = 120 A, VGS = 10 V (see Figure 3) 100 TBD C TBD nC nC nC Typ. Max. Unit 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Table 6. Symbol td(on) tr td(off) tf 4/12 Dynamic Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 27.5 V, ID = 60 A RG = 4.7 Ω VGS = 10 V (see Figure 2, Figure 7) Min. TBD TBD TBD TBD ns ns ns ns STB180N10F3 - STP180N10F3 Table 7. Symbol Electrical characteristics Source drain diode Parameter ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min. Typ. ISD=120 A, VGS=0 ISD=120 A, di/dt = 100 A/µs, VDD=30 V, Tj=150°C (see Figure 4) TBD TBD TBD Max. Unit 120 480 A A 1.5 V ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/12 Test circuit STB180N10F3 - STP180N10F3 3 Test circuit Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit Figure 6. Unclamped inductive waveform Switching time waveform 6/12 Figure 3. Figure 7. Gate charge test circuit STB180N10F3 - STP180N10F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/12 Package mechanical data STB180N10F3 - STP180N10F3 TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 8/12 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STB180N10F3 - STP180N10F3 Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 9/12 Packaging mechanical data 5 STB180N10F3 - STP180N10F3 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 10/12 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB180N10F3 - STP180N10F3 6 Revision history Revision history Table 8. Document revision history Date Revision 01-Aug-2008 1 Changes First version 11/12 STB180N10F3 - STP180N10F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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