STB75NH02L N-Channel 24V - 0.0062Ω - 60A - D2PAK STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STB75NH02L 24V <0.008Ω 60A (1) 1. Limited by package 3 1 ■ RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device D2PAK Internal schematic diagram Description The device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. Applications ■ Switching application Order codes Part number Marking Package Packaging STB75NH02LT4 B75NH02L D²PAK Tape & Reel July 2006 Rev 3 1/13 www.st.com 13 STB75NH02L Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STB75NH02L 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Drain-source voltage rating 30 V VDS Drain-source voltage (VGS = 0) 24 V VGS Gate-source voltage ± 20 V ID (2) Drain current (continuous) at TC = 25°C 60 A ID Drain current (continuous) at TC = 100°C 53 A Drain current (pulsed) 240 A Total dissipation at TC = 25°C 80 W Derating factor 0.53 W/°C EAS (5) Single pulse avalanche energy 360 mJ TJ Operating junction temperature storage temperature -55 to 175 °C Value Unit Vspike (1) IDM (3) PTOT (4) Tstg Parameter 1. Garanted when external Rg = 4.7Ω and tf < tfmax 2. Value limited by wire bonding 3. Pulse width limited by safe operating area 4. This value is rated according to RthJC 5. Starting TJ =25°C, Id = 30A, Vdd = 15V Table 2. Symbol Thermal data Parameter RthJC Thermal resistance junction-case max 1.88 °C/W RthJA Thermal resistance junction-amb max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Tl 3/13 STB75NH02L Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 25 mA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 5 V, ID= 30 A Symbol gfs (1) Ciss Coss Crss Qg Max. 24 1 VGS= 10 V, ID= 30 A Unit V VDS = 20 V,Tc = 125°C 1 10 µA µA ±100 nA 1.8 V 0.0062 0.008 0.008 0.014 Ω Ω Typ. Max. Unit Dynamic Parameter Forward Transconductance Test conditions Min. VDS =10V, ID = 18A Input Capacitance VDS =15V, f=1 MHz, VGS=0 Output Capacitance Reverse Transfer Capacitance VDD=10V, ID = 60 A VGS =5V Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge RG Gate Input Resistance f=1MHz Gate DC Bias =0 Test Signal Level =20mV Open Drain Qgs Typ. VDS = 20 V, IDSS Table 4. Min. 27 S 2050 545 70 pF pF pF 17 7.7 3.5 Figure 14 22 nC nC nC Ω 1.1 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 5. Symbol td(on) tr td(off) tf 4/13 Switching times Parameter Turn-on delay time rise time Turn-off delay time fall time Test conditions VDD=10 V, ID=30 A, RG=4.7Ω, VGS=10V Figure 15 VDD=10 V, ID=30A, RG=4.7Ω, VGS=10V Figure 15 Min. Typ. Max. Unit 12 200 ns ns 18 25 ns ns STB75NH02L Table 6. Electrical characteristics Source drain diode Symbol Parameter ISD Source-drain current Source-drain current (pulsed) ISDM VSD(1) trr Qrr IRRM Test conditions Forward on Voltage ISD = 30 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=60 A, di/dt = 100A/µs, VDD=15 V, TJ=150°C Min. Typ. 36 35 3.6 Max. Unit 60 240 A A 1.3 V ns µC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/13 STB75NH02L Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 5. Transfer characteristics Figure 4. Transconductance Figure 6. Static drain-source on resistance 6/13 STB75NH02L Electrical characteristics Figure 7. Gate charge vs gate -source voltage Figure 10. Capacitance variations Figure 8. Normalized gate threshold voltage vs temperatute Figure 11. Normalized on resistance vs Temperature Figure 9. Source-drain diode forward characteristics Figure 12. Normalized BVDSS vs temperature 7/13 Test circuits 3 STB75NH02L Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for indictive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/13 STB75NH02L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 STB75NH02L Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 10/13 STB75NH02L 5 Packing mechanical data Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. 1.574 0.933 0.956 * on sales type 11/13 STB75NH02L Revision history 6 Revision history Table 7. 12/13 Revision history Date Revision Changes 24-Oct-2005 1 Preliminary version 15-Mar-2006 2 Complete version 22-Jul-2006 3 New template, no content change STB75NH02L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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