STL85N6F3 N-channel 60 V, 0.0057 Ω, 19 A PowerFLAT™ 5x6 STripFET™ Power MOSFET Features Type VDSS STL85N6F3 60 V RDS(on) max ID < 0.0065 Ω 19 A (1) 1. The value is rated according Rthj-pcb 1 2 ■ ■ 3 Extremely low on-resistance RDS(on) 4 PowerFLAT™ 5x6 100% avalanche tested Applications ■ Switching applications Description This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram $ $ $ $ ' 3 3 3 "OTTOM6IEW 4OP6IEW !-6 Table 1. Device summary Order code Marking Package Packaging STL85N6F3 85N6F3 PowerFLAT™ 5x6 Tape and reel July 2011 Doc ID 15340 Rev 2 1/15 www.st.com 15 Contents STL85N6F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 8 Doc ID 15340 Rev 2 STL85N6F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 60 V ± 20 V Drain current (continuous) at TC = 25°C 19 A VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID (1) ID (1) Drain current (continuous) at TC = 100°C 12 A (2) Drain current (pulsed) 76 A ID (3) Drain current (continuous) at TC=25°C 85 A ID (3) Drain current (continuous) at TC = 100°C 54 A PTOT (1) Total dissipation at TC = 25°C 4 W (3) Total dissipation at TC = 25°C 80 W 0.03 W/°C -55 to 150 °C IDM PTOT Derating factor TJ Operating junction temperature Storage temperature Tstg 1. The value is rated according Rthj-pcb 2. Pulse width limited by safe operating area 3. The value is rated according Rthj-c Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) (steady state) 1.56 °C/W Thermal resistance junction-ambient 31.3 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec Doc ID 15340 Rev 2 3/15 Electrical characteristics 2 STL85N6F3 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ±200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 8.5A V(BR)DSS Table 5. Symbol 4/15 On/off states 60 V 2 V 0.0057 0.0065 Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 3050 659 38 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=30 V, ID = 19 A VGS =10 V (see Figure 14) - 49.8 14.6 12 - nC nC nC Doc ID 15340 Rev 2 STL85N6F3 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 30 V, ID= 9.5 A, RG= 4.7 Ω, VGS = 10 V (see Figure 13) Min. Typ. Max. Unit - 21.8 14.3 38.4 7.1 - ns ns ns ns Min Typ. Max Unit Source drain diode Parameter Test conditions Source-drain current - 19 A ISDM(1) Source-drain current (pulsed) - 76 A VSD(2) Forward on voltage ISD = 19 A, VGS=0 - 1.3 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 19 A, di/dt = 100 A/µs, VDD= 48 V, Tj=150°C - trr Qrr IRRM 53.6 120.1 4.5 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 15340 Rev 2 5/15 Electrical characteristics STL85N6F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics !-V )$ ! 4J # 4C # 3INGLEPULSE IS EA N AR IS 3O TH 2$ IN AX ION YM T A ER DB /P ITE ,IM MS MS S Figure 4. 6$36 Output characteristics !-V !-V )$ ! )$ ! 6$36 6'36 Figure 6. 6 6$36 Normalized BVDSS vs temperature !-V "6$33 NORM Figure 7. Static drain-source on resistance !-V 2$3ON /HM 6'36 6'36 6/15 4* # Doc ID 15340 Rev 2 )$! STL85N6F3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. !-V 6'3 6 6$$6 )$! Capacitance variations !-V # P& #ISS #OSS #RSS 1GN# Figure 10. Normalized gate threshold voltage vs temperature !-V 6'3THNORM 6$36 Figure 11. Normalized on resistance vs temperature !-V 2$3ON NORM 4* # 4* # Figure 12. Source-drain diode forward characteristics !-V 63$ 6 4* # 4* # 4* # )3$! Doc ID 15340 Rev 2 7/15 Test circuits 3 STL85N6F3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/15 0 Doc ID 15340 Rev 2 10% AM01473v1 STL85N6F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15340 Rev 2 9/15 Package mechanical data Table 8. STL85N6F3 PowerFLAT™ 5x6 type S-C mechanical data mm Dim. Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 A2 b 0.25 0.30 0.50 D 5.20 E 6.15 D2 4.11 4.31 E2 3.50 3.70 e 1.27 e1 0.65 L 0.715 1.015 K 1.05 1.35 Figure 19. PowerFLAT™ 5x6 type S-C drawing 4OPVIEW "OTTOMVIEW 3IDEVIEW ?$?TYPE# 10/15 Doc ID 15340 Rev 2 STL85N6F3 Package mechanical data Table 9. PowerFLAT™ 5x6 type C-B mechanical data mm Dim. Min. Typ. Max. A 0.80 0.83 0.93 A1 0 0.02 0.05 A3 b 0.20 0.35 0.40 D 5.00 D1 4.75 D2 4.15 4.20 E 6.00 E1 5.75 0.47 4.25 E2 3.43 3.48 3.53 E4 2.58 2.63 2.68 e L 1.27 0.70 0.80 Doc ID 15340 Rev 2 0.90 11/15 Package mechanical data STL85N6F3 Figure 20. PowerFLAT™ 5x6 type C-B drawing Bottom View e/2 e 1 PIN 1 IDENTIFICATION EXPOSED PAD E2 E4 b 8x Top View D2/2 D/2 D2 E/2 E1 PIN 1 IDENTIFICATION E 1 D1 D C 0.1 A3 SEATING PLANE A 0.08 A1 C C LEADS COPLANARITY See note 4 7286463_Rev_H 12/15 Doc ID 15340 Rev 2 STL85N6F3 Package mechanical data Figure 21. PowerFLAT™ 5x6 recommended footprint (dimensions in mm) !-V Doc ID 15340 Rev 2 13/15 Revision history 5 STL85N6F3 Revision history Table 10. 14/15 Document revision history Date Revision Changes 22-Jan-2009 1 First release. 08-Jul-2011 2 Datasheet promoted from preliminary data to datasheet. Doc ID 15340 Rev 2 STL85N6F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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