STL9N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT™ (3.3x3.3) STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses PowerFLAT™(3.3x3.3) (Chip scale package) Applications ■ Figure 1. Switching applications Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code Marking Package Packaging STL9N3LLH5 9N3L PowerFLAT™ (3.3x3.3) Tape and reel July 2009 Doc ID 16012 Rev 1 1/12 www.st.com 12 Contents STL9N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/12 .............................................. 6 Doc ID 16012 Rev 1 STL9N3LLH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V ± 22 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25 °C 9 A ID (1) Drain current (continuous) at TC=100 °C 6 A (2) Drain current (pulsed) 36 A PTOT(3) Total dissipation at TC = 25 °C 50 W PTOT(1) Total dissipation at TC = 25 °C 2 W 0.4 W/°C -55 to 150 °C Value Unit IDM Derating factor TJ Operating junction temperature storage temperature Tstg 1. The value is rated according Rthj-pcb 2. Pulse width limited by safe operating area. 3. The vaule is rated according Rthj-c Table 3. Thermal resistance Symbol Parameter Thermal resistance junction-case (drain) 2.5 °C/W (1) Thermal resistance junction-pcb 42.8 °C/W Rthj-pcb (2) Thermal resistance junction-pcb 63.5 °C/W Rthj-case Rthj-pcb 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec 2. Steady state Doc ID 16012 Rev 1 3/12 Electrical characteristics 2 STL9N3LLH5 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 4.5 A Symbol Ciss Coss Crss Qg Parameter Input capacitance Output capacitance Reverse transfer capacitance Qgd RG Gate input resistance Table 6. Symbol td(on) tr td(off) tf Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 2.5 V 15 19 19 22 mΩ mΩ Min. Typ. Max. Unit - 724 132 20 pF pF pF - 5 2 2 nC nC nC VDS = Max rating @125 °C 1 VGS= 4.5 V, ID= 4.5 A Dynamic Total gate charge Gate-source charge Gate-drain charge Qgs Min. VDS = Max rating, IDSS Table 5. 4/12 On/off states Test conditions VDS =25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 9 A VGS =4.5 V (see Figure 14) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV Open drain - Test conditions Min. Typ. - 4 4.2 21 3.5 3.3 Ω Max. Unit - ns ns ns ns Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time VDD=15 V, ID= 4.5 A, RG=4.7 Ω, VGS= 10 V (see Figure 13) Doc ID 16012 Rev 1 STL9N3LLH5 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 9 A ISDM(1) Source-drain current (pulsed) - 36 A VSD(2) Forward on voltage - 1.1 V trr Qrr IRRM ISD= 9 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 9 A, di/dt = 100 A/µs, VDD=20 V, Tj=150 °C (see Figure 18) - 21 10 1 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Doc ID 16012 Rev 1 5/12 Electrical characteristics STL9N3LLH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM03821v1 ID (A) 100 Operation in this area is Limited by max RDS(on) 10 10ms 1 100ms 1s Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 Figure 4. 10 1 VDS(V) Output characteristics AM03815v1 ID (A) VGS=10V AM03822v1 ID (A) 30 100 6V 80 25 5V 20 60 15 4V 40 10 20 5 3V 0 0 Figure 6. 1 2 3 4 Normalized BVDSS vs temperature AM03819v1 BVDSS (norm) 0 0 Figure 7. RDS(on) (Ω) 25 1.05 20 1.00 15 0.95 10 20 45 70 95 120 TJ(°C) Doc ID 16012 Rev 1 1 2 3 4 5 VGS(V) Static drain-source on resistance 1.1 0.9 -50 -30 -5 6/12 VDS(V) 5 0 AM03823v1 ID=4.5A VGS=10V 2 4 6 8 10 ID(A) STL9N3LLH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM03817v1 VGS (V) VDD=15V VGS=4.5V ID=9A 10 Capacitance variations AM03816v1 C (pF) 1000 800 Ciss 8 600 6 400 4 200 2 Coss 0 0 4 2 6 8 0 0 10 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM03820v1 VGS(th) (norm) 1.10 10 20 Crss VDS(V) Figure 11. Normalized on resistance vs temperature RDS(on) (norm) AM03824v1 1.6 1.4 0.90 1.2 0.80 1 0.60 0.8 0.40 -55 -30 -5 20 45 70 95 120 TJ(°C) 0.6 -55 -30 -5 20 45 70 95 120 TJ(°C) Figure 12. Source-drain diode forward characteristics AM03818v1 VSD (V) TJ=-50°C 0.9 0.8 TJ=25°C 0.7 TJ=150°C 0.6 0.5 0.4 0 2 4 6 8 10 ISD(A) Doc ID 16012 Rev 1 7/12 Test circuits 3 STL9N3LLH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 16012 Rev 1 10% AM01473v1 STL9N3LLH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 16012 Rev 1 9/12 Package mechanical data STL9N3LLH5 PowerFLAT™ ( 3.3 x 3.3) mechanical data mm inch Dim Min A 0.950 A3 Max Min 1.000 0.037 0.200 Typ Max 0.039 0.008 b 0.29 0.34 0.39 0.011 0.013 0.015 D 3.200 3.300 3.400 0.126 0.123 0.134 D2 2.24 2.29 2.34 0.088 0.090 0.092 E 2.20 3.30 3.40 0.086 0.123 0.1338 E2 1.660 1.710 1.760 0.065 0.067 0.069 e 0.650 0.025 L 0.40 0.0157 L1 10/12 Typ 0.45 0.50 0.55 Doc ID 16012 Rev 1 0.017 0.0196 0.021 STL9N3LLH5 5 Revision history Revision history Table 8. Document revision history Date Revision 09-Jul-2009 1 Changes First release Doc ID 16012 Rev 1 11/12 STL9N3LLH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 16012 Rev 1