STPS30L30C Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Low thermal resistance ■ Avalanche capability specified A1 K A2 K K A2 A1 Description This dual center tap Schottky rectifier is suited for switch mode power supplies and high frequency DC to DC converters. A2 K A1 D2PAK STPS30L30CG TO-220AB STPS30L30CT Packaged in TO-220AB, D2PAK and I2PAK, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. A2 A1 K I2PAK STPS30L30CR Table 1. Device summary IF(AV) 2 x 15 A VRRM 30 V Tj (max) 150 °C V VF(typ) 0.37 V I Electrical characteristics (a) Figure 1. I "Forward" 2 x IO X IF VRRM VR VAR IO X V IR VTo VF(Io) VF VF(2xIo) "Reverse" IAR a. VARM and IARM must respect the reverse safe operating area defined in Figure 12 VAR and IAR are pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics April 2010 Doc ID 5506 Rev 6 1/9 www.st.com 9 Characteristics STPS30L30C 1 Characteristics Table 2. Absolute ratings (limiting values per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 30 V IF(RMS) Forward rms current 30 A 15 30 A IF(AV) Average forward current δ = 0.5 Per diode Per device Tc = 140 °C, IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, 220 A IRRM Peak repetitive reverse current tp = 2 µs square, F= 1 kHz square 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 3 A Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 5300 W VARM (2) Maximum repetitive peak avalanche voltage tp < 1 µs Tj < 150 °C IAR < 35 A 45 V VASM (2) Maximum single pulse peak avalanche voltage tp < 1 µs Tj < 150 °C IAR < 35 A 45 V Tstg Storage temperature range -65 to + 175 °C 150 °C 10000 V/µs PARM (1) Maximum operating junction temperature (3) Tj dV/dt Critical rate of rise of reverse voltage 1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. Refer to Figure 12 dPtot --------------dTj 3. 1 - condition to avoid thermal runaway for a diode on its own heatsink < ------------------------Rth ( j – a ) Table 3. Thermal resistance(1) Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Value Unit 1.5 0.8 °C/W Per diode Total 0.1 1. When the diodes 1 and 2 are used simultaneously: Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 4. Symbol IR(1) Static electrical characteristics (per diode) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VF(1) Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 15 A IF = 30A 1. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.24 x IF(AV) + 0.009 x IF2(RMS) 2/9 Doc ID 5506 Rev 6 Min. Typ. 170 Max. Unit 1.5 mA 350 mA 0.46 0.33 0.37 0.57 0.43 0.5 V STPS30L30C Figure 2. 10 9 8 7 6 5 4 3 2 1 0 Characteristics Average forward power dissipation Figure 3. versus average forward current (per diode) Average forward current per diode versus ambient temperature (δ = 0.5) IF(av)(A) PF(av)(W) 16 δ = 0.2 δ = 0.1 14 δ = 0.5 δ = 0.05 Rth(j-a)=Rth(j-c) 12 Rth(j-a)=15°C/W 10 δ=1 8 Rth(j-a)=50°C/W 6 T IF(av) (A) 0 2 4 Figure 4. 6 8 10 δ=tp/T 12 14 16 T 4 2 tp 18 20 Normalized avalanche power derating versus pulse duration 0 δ=tp/T 0 25 Figure 5. P ARM (t p ) P ARM (1µs) 1 1.2 Tamb(°C) tp 50 75 100 125 150 Normalized avalanche power derating versus junction temperature P ARM (T j ) P ARM (25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 0.1 Figure 6. IM(A) 250 225 200 175 150 125 100 75 50 IM 25 0 1E-3 T j (°C) t p (µs) 1 0 10 100 25 1000 Non repetitive surge peak forward current versus overload duration, (maximum values per diode) Figure 7. 50 75 100 125 150 Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=25°C Tc=75°C 0.6 0.4 δ = 0.2 Tc=110°C 0.2 t δ = 0.5 t(s) δ=0.5 1E-2 1E-1 1E+0 T δ = 0.1 0.0 1E-4 Doc ID 5506 Rev 6 tp(s) Single pulse 1E-3 1E-2 δ=tp/T 1E-1 tp 1E+0 3/9 Characteristics Figure 8. STPS30L30C Reverse leakage current versus reverse voltage applied (typical values per diode) Figure 9. IR(mA) Junction capacitance versus reverse voltage applied (typical values per diode) C(nF) 1E+3 5.0 Tj=150°C F=1MHz Tj=25°C 1E+2 Tj=125°C 1E+1 1.0 1E+0 Tj=25°C 1E-1 1E-2 VR(V) 0 5 10 0.1 15 20 25 30 Figure 10. Forward voltage drop versus forward current (maximum values per diode) VR(V) 1 2 5 10 20 50 Figure 11. Thermal resistance junction to ambient versus copper surface under tab IFM(A) Rth(j-a) (°C/W) 200 80 100 70 Tj=15 0 °C (typical values) Epoxy printed circuit board, copper thickness = 35 µm D2PAK 60 50 40 Tj=12 5 °C 10 30 Tj=25 °C 20 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 0 1.0 1.2 1.4 1.6 S(Cu) (cm²) 0 4 8 12 16 Figure 12. Reverse safe operating area (tp < 1 µs and Tj < 150 °C) Iarm (A) 55 50 Forbidden area 45 40 35 30 Operating area 25 Varm (V) 20 30 4/9 35 40 45 50 Doc ID 5506 Rev 6 55 60 20 24 28 32 36 40 STPS30L30C 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5. TO-220AB dimensions Dimensions Ref. Dia Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 C L5 L7 L6 L2 F2 D L9 L4 L2 F M G1 Inches A H2 F1 Millimeters 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 E G M Diam. Doc ID 5506 Rev 6 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 5/9 Package information STPS30L30C Mounting (soldering) the I2PAK metal slug (heatsink) with alloy, like a surface mount device, IS NOT PERMITTED. A standard through-hole mounting is mandatory. I2PAK dimensions Table 6. Dimensions Ref. c2 L2 D L1 A1 b1 L b c e e1 6/9 Doc ID 5506 Rev 6 Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.044 0.067 c 0.49 0.70 0.019 0.028 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 E 10 10.40 0.394 0.409 L 13 14 0.512 0.551 L1 3.50 3.93 0.138 0.155 L2 1.27 1.40 0.050 0.055 A E Millimeters STPS30L30C Package information Table 7. D2PAK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm R 0.40 typ. V2 0° 0.016 typ. 8° 0° 8° Figure 13. D2PAK footprint (dimensions in mm) 16.90 10.30 5.08 1.30 8.90 Doc ID 5506 Rev 6 3.70 7/9 Ordering information 3 STPS30L30C Ordering information Table 8. Ordering information Order code Marking Package Weight STPS30L30CT STPS30L30CT TO-220AB STPS30L30CG 4 2.0 g 50 Tube 2 1.8 g 50 Tube 2 D PAK STPS30L30CG-TR STPS30L30CG D PAK 1.8 g 1000 Tape and reel STPS30L30CG-TR STPS30L30CG I2PAK 1.49 g 50 Tube Revision history Table 9. 8/9 STPS30L30CR Base qty Delivery mode Document revision history Date Revision Jul-2003 5C 29-Apr-2010 6 Changes Previous issue Added Figure 1 and Figure 12. Added parameters VARM and VASM to Table 2. Doc ID 5506 Rev 6 STPS30L30C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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