STMICROELECTRONICS STPS1545CFP

STPS1545CT/CF/CG/CFP/CR
®
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2 x 7.5 A
VRRM
45 V
Tj (max)
175 °C
VF (max)
0.57 V
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
INSULATED
PACKAGE:
ISOWATT220AB,
TO-220FPAB
Insulating voltage = 2000V DC
Capacitance = 12pF
AVALANCHE CAPABILITY SPECIFIED
A1
K
A2
A2
■
■
■
A1
A2
K
TO-220AB
STPS1545CT
A1
K
ISOWATT220AB
STPS1545CF
■
K
■
DESCRIPTION
Dual center tap Schottky rectifier suited for
SwitchMode Power Supply and high frequency DC
to DC converters.
Packaged either in TO-220AB, ISOWATT220AB,
TO-220FPAB, D2PAK or I2PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity
protection applications.
A2
A2
A1
D2PAK
STPS1545CG
K
A1
TO-220FPAB
STPS1545CFP
A2
A1
K
I2PAK
STPS1545CR
July 2003 - Ed: 5F
1/8
STPS1545CT/CF/CG/CFP/CR
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS)
RMS forward current
20
A
A
IF(AV)
Average forward
current δ = 0.5
2
TO-220AB / D PAK
I2PAK
Tc = 157°C
Per diode
7.5
ISOWATT220AB
TO-220FPAB
Tc = 130°C
Per device
15
IFSM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
IRRM
Repetitive peak reverse current
IRSM
PARM
Tstg
Tj
dV/dt
* :
150
A
tp = 2 µs square
F = 1kHz
1
A
Non repetitive peak reverse current
tp = 100 µs square
2
A
Repetitive peak avalanche power
tp = 1µs
2700
W
-65 to +175
°C
Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
175
°C
10000
V/µs
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a )
THERMAL RESISTANCES
Symbol
Rth (j-c)
Parameter
Junction to case
Rth (c)
Value
Unit
°C/W
TO-220AB / D2PAK / I2PAK
Per diode
Total
3.0
1.7
ISOWATT220AB / TO-220FPAB
Per diode
Total
5.5
4.2
TO-220AB / D2PAK / I2PAK
Coupling
0.35
ISOWATT220AB / TO-220FPAB
2.9
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Symbol
Parameter
IR *
Reverse leakage current
Tests Conditions
Tj = 25°C
Pulse test :
Forward voltage drop
Tj = 125°C
IF = 7.5 A
Tj = 25°C
IF = 15 A
Tj = 125°C
IF = 15 A
* tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.020 IF2(RMS)
2/8
Typ.
Max.
Unit
100
µA
5
15
mA
0.5
0.57
V
VR = VRRM
Tj = 125°C
VF *
Min.
0.84
0.65
0.72
STPS1545CT/CF/CG/CFP/CR
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average current versus
temperature (δ= 0.5, per diode).
PF(av)(W)
IF(av)(A)
6
δ = 0.1
δ = 0.2
δ = 0.5
δ = 0.05
5
δ=1
4
3
2
T
1
IF(av) (A)
0
0
1
ambient
2
3
4
5
δ=tp/T
6
7
8
tp
9
10
Fig. 3: Normalized avalanche power derating
versus pulse duration.
9
8
7
6
5
4
3
2
1
0
ISOWATT220AB
TO-220FPAB
Rth(j-a)=15°C/W
Rth(j-a)=40°C/W
T
δ=tp/T
0
Tamb(°C)
tp
25
50
75
100
125
150
175
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
TO-220AB
D²PAK
Rth(j-a)=Rth(j-c)
1.2
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
0
1000
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB and D2PAK).
25
50
75
100
125
150
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
IM(A)
IM(A)
120
80
70
100
60
80
50
60
Tc=50°C
40
Tc=100°C
30
40
IM
20
Tc=150°C
t
10
t(s)
δ=0.5
0
1E-3
1E-2
20
1E-1
1E+0
0
1E-3
Tc=50°C
Tc=100°C
Tc=150°C
IM
t
t(s)
δ=0.5
1E-2
1E-1
1E+0
3/8
STPS1545CT/CF/CG/CFP/CR
Fig. 6-1: Relative variation of thermal transient
impedance junction to case versus pulse duration
(per diode) (TO-220AB and D2PAK).
Fig. 6-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(per diode) (ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.8
0.8
0.6
δ = 0.5
0.6
δ = 0.5
0.4
0.4
δ = 0.2
T
δ = 0.1
0.2
0.0
1E-4
δ=tp/T
tp(s)
Single pulse
1E-3
1E-2
T
δ = 0.2
0.2
δ = 0.1
1E-1
tp(s)
Single pulse
tp
1E+0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
0.0
1E-3
1E-2
δ=tp/T
1E-1
tp
1E+0
1E+1
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
IR(µA)
1000
5E+4
1E+4
Tj=150°C
1E+3
Tj=100°C
F=1MHz
Tj=25°C
Tj=125°C
500
Tj=75°C
1E+2
Tj=50°C
1E+1
200
Tj=25°C
1E+0
1E-1
VR(V)
VR(V)
0
5
10
15
20
25
30
35
40
45
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
100
1
2
5
10
20
50
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm).
IFM(A)
Rth(j-a) (°C/W)
100.0
80
70
Tj=125°C
Typical values
60
Tj=25°C
10.0
50
40
Tj=125°C
30
1.0
20
10
VFM(V)
0.1
0.0
4/8
0.2
0.4
0.6
0.8
0
1.0
1.2
1.4
1.6
S(Cu) (cm²)
0
2
4
6
8
10
12
14
16
18
20
STPS1545CT/CF/CG/CFP/CR
PACKAGE MECHANICAL DATA
D2PAK
DIMENSIONS
REF.
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
Millimeters
Min.
A
V2
* FLAT ZONE NO LESS THAN 2mm
Max.
Inches
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
V2
0.40 typ.
0°
8°
0.016 typ.
0°
8°
FOOTPRINT DIMENSIONS (in millimeters)
16.90
10.30
5.08
1.30
3.70
8.90
5/8
STPS1545CT/CF/CG/CFP/CR
PACKAGE MECHANICAL DATA
TO-220AB
REF.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
F
M
G1
E
G
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Diam.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
1.14
1.70
0.044
0.066
1.14
1.70
0.044
0.066
4.95
5.15
0.194
0.202
2.40
2.70
0.094
0.106
10
10.40
0.393
0.409
16.4 typ.
0.645 typ.
13
14
0.511
0.551
2.65
2.95
0.104
0.116
15.25
15.75
0.600
0.620
6.20
6.60
0.244
0.259
3.50
3.93
0.137
0.154
2.6 typ.
0.102 typ.
3.75
3.85
0.147
0.151
PACKAGE MECHANICAL DATA
TO-220FPAB
REF.
A
B
H
Dia
L6
L2
L7
L3
L5
D
F1
L4
F2
F
G1
G
6/8
E
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
DIMENSIONS
Millimeters
Inches
Min.
Max.
4.4
4.6
2.5
2.7
2.5
2.75
0.45
0.70
0.75
1
1.15
1.70
1.15
1.70
4.95
5.20
2.4
2.7
10
10.4
16 Typ.
28.6
30.6
9.8
10.6
2.9
3.6
15.9
16.4
9.00
9.30
3.00
3.20
Min.
Max.
0.173
0.181
0.098
0.106
0.098
0.108
0.018
0.027
0.030
0.039
0.045
0.067
0.045
0.067
0.195
0.205
0.094
0.106
0.393
0.409
0.63 Typ.
1.126
1.205
0.386
0.417
0.114
0.142
0.626
0.646
0.354
0.366
0.118
0.126
STPS1545CT/CF/CG/CFP/CR
PACKAGE MECHANICAL DATA
ISOWATT220AB
DIMENSIONS
REF.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
B
2.50
2.70
0.098
0.106
D
2.50
2.75
0.098
0.108
E
0.40
0.70
0.016
0.028
F
0.75
1.00
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.40
2.70
0.094
0.106
H
10.00
10.40
0.394
0.409
L2
16.00 typ.
0.630 typ.
L3
28.60
30.60
1.125
1.205
L4
9.80
10.60
0.386
0.417
L6
15.90
16.40
0.626
0.646
L7
9.00
9.30
0.354
0.366
Diam
3.00
3.20
0.118
0.126
7/8
STPS1545CT/CF/CG/CFP/CR
PACKAGE MECHANICAL DATA
I2PAK
REF.
DIMENSIONS
Millimeters
A
E
c2
L2
D
L1
A1
b2
L
b1
b
c
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
b
0.70
0.93
0.028
0.037
b1
1.14
1.17
0.044
0.046
b2
1.14
1.17
0.044
0.046
c
0.45
0.60
0.018
0.024
c2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
E
10.0
10.4
0.394
0.409
L
13.1
13.6
0.516
0.535
L1
3.48
3.78
0.137
0.149
L2
1.27
1.40
0.050
0.055
e
Type
Marking
Package
Weight
Base qty
Delivery mode
STPS1545CT
STPS1545CT
TO-220AB
2.23 g.
50
Tube
STPS1545CF
STPS1545CF
ISOWATT220AB
2.08 g.
50
Tube
STPS1545CFP
STPS1545CFP
TO-220FPAB
2.0 g
50
Tube
STPS1545CG
STPS1545CG
D2PAK
1.48 g.
50
Tube
D PAK
1.48 g.
1000
Tape & reel
I2PAK
1.49 g
50
Tube
STPS1545CG-TR STPS1545CG
STPS1545CR
■
■
STPS1545CR
2
Cooling method: by conduction (C)
Expoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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