THDT58S1 THDT58S TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION Application Specific Discretes A.S.D. FEATURES CROWBAR PROTECTION DUAL ASYMMETRICAL TRANSIENT SUPPRESSOR PEAK PULSE CURRENT : - IPP = 75 A, 10/1000 µs for THDT58S. - IPP = 35 A, 10/1000 µs for THDT58S1. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 58 V. BREAKOVER VOLTAGE = 80V max SIP 3 DESCRIPTION This device has been especially designed to protect subscriber line card interfaces (SLIC) against transient overvoltages. Its ion-implanted technology confers its excellent electrical characteristics. This is why this device easily fulfils the main protection standards which are related to the overvoltages suppression on telecom lines. The product pinout is compatible with TO202 and TO220 packages. COMPLIESWITHTHE FOLLOWING STANDARDS : CCITT K20 : VDE 0433 : VDE 0878 : CNET I3124: BELLCORE TR-NWT-001089 : 10/700 µs 5/310 µs 10/700 µs 5/200 µs 1.2/50 µs 1/20 µs 0.5/700 µs 0.2/310µs 1kV 25A 2kV 45/50A(*) 1.5kV 40A 1kV 25A 10/1000µs 10/1000µs 1kV 35/75A (*) SCHEMATIC DIAGRAM NC 1 Tip 2 GND 3 Ring 4 (*) with series resistors or PTC. TM: ASD is trademarks of SGS-THOMSON Microelectronics. February 1998 - Ed: 3 1/7 THDT58S / THDT58S1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter THDT58S1 THDT58S Unit 10/1000 µs 8/20 µs 2/10 µs 35 70 80 75 150 A 20 30 A 5 kV/µs IPP Peak pulse current (see note 1) ITSM Non repetitive surge peak on-state current (F = 50Hz) t = 20 ms dV/dt Critical rate of rise of off-state voltage 67% VBR Tstg Tj Storage temperature range Maximum operating junction temperature -55 to +150 +150 -40 to +150 +150 °C °C TL Maximum lead temperature for soldering during 10s 260 260 °C Note 1 : Pulse waveform : 10/1000µs tr =10µs 5/310µs tr =5µs 2/10µs tr =2µs tp=1000µs tp=310µs tp=10µs % I PP 100 50 0 tr t tp THERMAL RESISTANCES Symbol Rth (j-a) 2/7 Parameter Junction to ambient Value Unit 80 °C/W THDT58S / THDT58S1 ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter I IF VRM Stand-offvoltage IRM Leakage current at VRM VBR Breakdown voltage VBO Breakover voltage IH Holding current VF Forward Voltage drop IBO Breakover current IPP Peak pulse current C Capacitance VBO VF VBR V VRM IRM IH IBO Ipp 1 - PARAMETER RELATED TO THE DIODE LINE/GND Symbol VF Test conditions tp = 500 µs IF = 5 A Value Unit 5 V 2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR Type IRM @ VRM max. VBR @ IR min. VBO @ IBO IH C max. min. note1 min. note 2 max. note 3 max. µA V V mA V mA mA mA pF THDT58S 10 56 58 1 80 150 800 150 400 THDT58S1 10 56 58 1 80 50 800 150 200 Note 1 : Note 2 : Note 3 : See the reference test circuit 1 for IBO and VBO parameters. See test circuit 2. VR = 1V, F = 1MHz. 3/7 THDT58S / THDT58S1 REFERENCE TEST CIRCUIT 1 : t TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - V OUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2 R VBAT = - 48 V - VP D.U.T. Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. 4/7 THDT58S / THDT58S1 Fig. 1: Relative variation of holding current junction temperature. Fig. 2: Capacitance versus reverse applied voltage (typical values). 1.0 0.0 Fig. 3: Peak on state voltage versus peak on state current (typical values). Fig. 4: Peak forward voltage drop versus peak forward current (typical values). 2.0 1.0 Fig. 5: Surge peak current versus overload duration (THDT58S). Fig. 6: Surge peak current versus overload duration (THDT58S1). ITSM(A) ITSM(A) 40 30 F=50Hz Tj initial=25°C F=50Hz Tj initial=25°C 25 30 20 20 15 10 10 5 t(s) 0 1E-2 1E-1 t(s) 1E+0 1E+1 1E+2 1E+3 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 5/7 THDT58S / THDT58S1 APPLICATION CIRCUIT Typical SLIC protection concept RING GENERATOR - Vbat PTC LINE A TIP T E S T RING RELAY R E L A Y S RING THBTXXX LINE B SLIC THDT58S THDT58S1 PTC FUNCTIONAL DESCRIPTION Line A Tip D1 P1 D2 P2 Line A Protection = - For positive Surges versus GND, the diode D1 will conduct - For negative Surges versus GND, the Protection device P1 will trigger at a maximum voltage equal to the VBO. Line B Protection = - For Surges on line B, the operatingmode is the same, D2 or P2 is activated. Line B 6/7 Ring THDT58S / THDT58S1 ORDER CODE THDT 58 S 1 35A VERSION Package : S = SIP3 ASYMETRICAL TRISIL BREAKDOWN VOLTAGE MARKING PACKAGE MECHANICAL DATA. SIP 3 Plastic REF. B Type Marking THDT58S THDT58S1 THDT58S THDT58S1 DIMENSIONS Millimetres Inches Min. Typ. Max. Min. A A I a1 a2 2.80 1.50 B a1 a2 L b1 b2 Z c1 Typ. Max. 7.10 0.280 0.110 1.90 0.059 0.075 10.15 0.400 b1 b2 1.35 1.75 0.053 0.069 c1 0.38 0.50 0.015 0.020 e e e3 e3 I L Z 0.50 0.020 2.54 7.62 0.100 0.200 10.50 3.30 0.413 0.130 1.50 0.059 Packaging : Standard packaging is in antistatic tubes Weight : 0.55g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7