UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability 1 TO-3P ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T (1)Packing Type (2)Package Type (3)Rank (4)Lead Free www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-3P Pin Assignment 1 2 3 B C E Packing Tube (1) T: Tube (2) T3P: TO-3P (3) x: refer to Classification of hFE1 (4) G: Halogen Free, L: Lead Free 1 of 5 QW-R214-008,D 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC = 25℃) PARAMETER Collector Base Voltage SYMBOL RATINGS UNIT VCBO 500 V VCEO 400 V Collector Emitter Voltage VCEO(SUS) 400 V Emitter Base Voltage VEBO 7 V Collector Current IC 15 A Base Current IB 5 A Power Dissipation PD 80 W ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJC Junction to Case UNIT ℃/W ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified.) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Switching Time RATINGS 1.55 SYMBOL VCBO VCEO VCEO(SUS) VEBO VCE (SAT) VBE (SAT) ICBO IEBO hFE tON tSTG tF TEST CONDITIONS ICBO=1mA ICEO=10mA IC=0.2A IEBO=1mA MIN 500 400 400 7 TYP IC=6A, IB=1.2A VCBO=500V VEBO=7V IC=6A, VCE=5V 10 IC=7.5A, IB1 =1.5A, IB2=-3A RL=20Ω, Pw=20μs, Duty ≤ 2% MAX 1 1.5 1 1 45 0.5 1.5 0.15 UNIT V V V V V V mA mA μs μs μs CLASSIFICATION OF hFE RANK RANGE A 10~15 B 15~20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 20~25 D 25~30 E 30~35 F 35~45 2 of 5 QW-R214-008,D 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING TIME TEST CIRCUIT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R214-008,D 2SC3320 TYPICAL CHARACTERISTICS DC Current Gain, hFE Collector Emitter Voltage, VCE (V) NPN EPITAXIAL SILICON TRANSISTOR Base and Collector Saturation Voltage 4 3 Safe Operating Area TC=25℃IC=5IB 30 10 0 10 10 VBE(SAT) 5 3 0.5 0.3 s 1 PW=1ms DC 1 VCE(SAT) s 0.5 0.3 0.1 0.05 0.03 0.1 0.01 0.05 0.1 0.3 0.5 1 3 5 10 20 Collector Current, IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TC=25℃ 0.05 Single Pulse 0.03 1 3 5 10 30 50 100 300 500 1000 Collector Emitter voltage, VCE (V) 4 of 5 QW-R214-008,D 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R214-008,D