UTC-IC 2SA1943L-X-T3L-T

UNISONIC TECHNOLOGIES CO., LTD
2SA1943
PNP SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
„
FEATURES
* Complementary to UTC 2SC5200
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage
1
TO-3PL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SA1943L-x-T3L-T
2SA1943G-x-T3L-T
2SA1943L-x-T3L-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-3PL
Pin Assignment
1
2
3
B
C
E
Packing
Tube
(1) T: Tube
(2) T3L: TO-3PL
(3) x: refer to Classification of hFE
(4) L: Lead Free , G: Halogen Free
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„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TC = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-230
V
Collector-Emitter Voltage
VCEO
-230
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-15
A
Base Current
IB
-1.5
A
Collector Power Dissipation (Tc=25℃)
PC
150
W
Junction Temperature
TJ
+150
℃
Storage Temperature Range
TSTG
-65 ~ +125
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃
„
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
Transition Frequency
Collector Output Capacitance
„
SYMBOL
ICBO
IEBO
V(BR) CEO
hFE
hFE
VCE (SAT)
VBE
fT
Cob
TEST CONDITIONS
VCB = -230V, IE=0
VEB= -5V, IC=0
IC= -50mA, IB=0
VCE= -5V, IC= -1A
VCE= -5V, IC= -7A
IC= -8A, IB= -0.8A
VCE= -5V, IC= -7A
VCE= -5V, IC= -1A
VCB= -10V, IE=0, f=1MHz
MIN
-230
55
35
TYP
MAX
-5.0
-5.0
UNIT
μA
μA
V
160
60
-1.5
-1.0
30
360
-3.0
-1.5
V
V
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
R
55 ~ 110
O
80 ~ 160
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA1943
-50
-30
-10
-5
-3
-1
-0.5
-0.3
Safe Operating Area
IC MAX. (PULSED)
IC MAX.
(CONTINUOUS)
1ms
DC
OPERATION
TC =100 C
10ms
100ms
**SINGLE NONREPETITIVE
PULSE TC = 25 C
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE.
-0.1
VCEO MAX.
-0.05
-0.03
-3
-10 -30 -100 -300 -1000
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Transient Thermal Resistance, rth ( C/W)
DC Current Gain, hFE
Collector-Emitter Saturation
Voltage, VCE(sat) (V)
Collector Current, IC (A)
Collector Current, IC (A)
TYPICAL CHARACTERISTICS
Collector Current, IC (A)
„
PNP SILICON TRANSISTOR
10
1
Transient Thermal Resistance
vs. Pulse Width
CURVES SHOULD BE
APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE
PULSE)
INFINTE HEAT SINK
0.1
0.01
1
10 100 1000
0.001 0.01 0.1
Pulse Width, tw (s)
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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