UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor drivers, switching regulators, converters and relay drivers, etc. FEATURES * RDS(ON)=0.150Ω @ VGS=-10V * High Switching Speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT25P10L-TA3-T UTT25P10G-TA3-T UTT25P10L-TN3-T UTT25P10G-TN3-T UTT25P10L-TN3-R UTT25P10G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-252 TO-252 1 G G G Pin Assignment 2 3 D S D S D S Packing Tube Tube Tape Reel 1 of 3 QW-R502-597.b UTT25P10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) VDSS -100 V Drain-Gate Voltage (RGS=20kΩ) (Note 2) VDGR -100 V Gate-Source Voltage VGSS ±20 V -25 A Continuous ID Drain Current Pulsed (Note 3) IDM -60 A Linear Derating Factor 1.2 W/°C TO-220 150 Power Dissipation PD W TO-252 50 Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ=25°C ~ 150°C 3. Repetitive rating: pulse width limited by maximum junction temperature. THERMAL CHARACTERISTICS PARAMETER Junction to Case SYMBOL TO-220 TO-252 θJC RATINGS 0.83 2.5 UNIT °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current Gate- Source Leakage Current IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=Rated BVDSS, VGS=0V VDS=0.8xRated BVDSS, VGS=0V , TC=125°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain to Source On Voltage (Note 1) VDS(ON) ID=-25A, VGS=-10V Static Drain-Source On-State Resistance (Note 2) RDS(ON) VGS=-10V, ID=2.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-25V, Output Capacitance COSS f=1MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) ID≈12.5A, VDS=-50V, Rise Time tR RGS=50Ω,VGS=-10V, Turn-OFF Delay Time tD(OFF) RL=4.0Ω Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 1) VSD ISD=-12.5A, Note: 1. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -100 V -1 µA -25 -2 35 165 270 165 +100 -100 nA nA -4 -3.75 0.150 V V Ω 3000 1500 600 pF pF pF 50 250 400 250 ns ns ns ns -1.4 V 2 of 3 QW-R502-597.b UTT25P10 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-597.b