SupreMOSTM FCP36N60N tm N-Channel MOSFET 600V, 36A, 90mΩ Features Description • RDS(on) = 81mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. • Ultra low gate charge ( Typ. Qg = 86nC) • Low effective output capacitance • 100% avalanche tested • RoHS compliant This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G DS TO-220 FCP Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS Drain to Source Voltage Gate to Source Voltage ID Drain Current IDM EAS IAR EAR Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt dv/dt PD TJ, TSTG TL Parameter -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 3) (TC = 25oC) Power Dissipation - Derate above 25oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds FCP36N60N 600 ±30 36 22.7 108 1800 12 3.12 100 20 312 2.6 -55 to +150 Units V V 300 oC FCP36N60N Units A A mJ A mJ V/ns V/ns W W/oC oC *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 0.4 RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2010 Fairchild Semiconductor Corporation FCP36N60N Rev. A 1 oC/W www.fairchildsemi.com FCP36N60N N-Channel MOSFET November 2010 Device Marking FCP36N60N Device FCP36N60N Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 1mA, VGS = 0V, TC = 25oC 600 - - V ID = 1mA, Referenced to 25oC - 0.7 - V/oC VDS = 480V, VGS = 0V VDS = 480V, VGS = 0V, TC = 125oC VGS = ±30V, VDS = 0V - - 10 100 ±100 μA 2.0 - 81 4.0 90 V mΩ - 41 - S - 3595 149 4 80 361 86 15.4 4785 200 6 112 - pF pF pF pF pF nC nC - 26.4 - nC Drain Open - 1 - Ω VDD = 380V, ID = 18A RG = 4.7Ω - 23 22 94 4 56 54 198 18 ns ns ns ns Maximum Continuous Drain to Source Diode Forward Current - - 36 A Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage VGS = 0V, ISD = 18A Reverse Recovery Time VGS = 0V, ISD = 18A dIF/dt = 100A/μs Reverse Recovery Charge - 574 10 108 1.2 - A V ns μC Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain to Source On Resistance VGS = VDS, ID = 250μA VGS = 10V, ID = 18A gFS Forward Transconductance VDS = 40V, ID = 18A Dynamic Characteristics Ciss Coss Crss Coss Cosseff. Qg(tot) Qgs Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 380V, VGS = 0V VDS = 380V, ID = 18A, VGS = 10V (Note 4) Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS ISM VSD trr Qrr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 12A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 36A, di/dt ≤ 200A/μs, VDD = 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCP36N60N Rev. A 2 www.fairchildsemi.com FCP36N60N N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics FCP36N60N Rev. A 3 www.fairchildsemi.com FCP36N60N N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve PDM FCP36N60N Rev. A 4 PDM t1 t2 t1 t2 www.fairchildsemi.com FCP36N60N N-Channel MOSFET Typical Performance Characteristics (Continued) FCP36N60N N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCP36N60N Rev. A 5 www.fairchildsemi.com FCP36N60N N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCP36N60N Rev. A 6 www.fairchildsemi.com FCP36N60N N-Channel MOSFET Mechanical Dimensions TO-220 FCP36N60N Rev. A 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FCP36N60N Rev. A 8 www.fairchildsemi.com FCP36N60N N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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