FDMC15N06 N-Channel MOSFET 55V, 15A, 0.090Ω Features Description • RDS(on) = 0.075Ω ( Typ.)@ VGS = 10V, ID = 15A These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. • 100% Avalanche Tested • RoHS Compliant Bottom Top Pin 1 S S S G D D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S MLP 3.3x3.3 MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage -Continuous (TC = 25oC) Ratings 55 Units V ±20 V 15 -Continuous (TC = 100oC) A ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current 15 A EAR Repetitive Avalanche Energy 3.5 mJ PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Continuous (TA = 25oC) TL - Pulsed 9 (Note 1a) 2.4 A (Note 2) 60 A (Note 3) 36 mJ (TC = 25oC) (TA = 25oC) 35 W 2.3 W -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient ©2009 Fairchild Semiconductor Corporation FDMC15N06 Rev. A Ratings 3.5 (Note 1a) 1 53 Units o C/W www.fairchildsemi.com FDMC15N06 N-Channel MOSFET July 2009 Device Marking FDMC15N06 Device FDMC15N06 Package Power 33 Reel Size 13" Tape Width 12mm Quantity 3000 units Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 55 - - V - 70 - V/oC Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V, TC = 25oC ID = 250µA, Referenced to 25oC VDS = 50V, VGS = 0V - - 1 VDS = 45V, TC = 150oC - - 250 VGS = ±20V, VDS = 0V - - ±100 µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10V, ID = 15A - 0.75 0.90 Ω gFS Forward Transconductance VDS = 20V, ID = 15A - 5 - S VDS = 25V, VGS = 0V f = 1MHz - 265 350 pF - 97 130 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 30V,ID = 15A VGS = 10V (Note 4) - 28 42 pF - 8.8 11.5 nC - 1.7 - nC - 3.6 - nC - 9.5 29 ns - 36.5 83 ns - 22.5 55 ns - 22 54 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 30V, ID = 15A RG = 25Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 15 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 15A - - 1.25 V trr Reverse Recovery Time - 30 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 15A dIF/dt = 100A/µs - 35 - nC (Note 5) Notes: 1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 2: Repetitive Rating: Pulse width limited by maximum junction temperature 3: L = 1mH, IAS = 8.5A, RG = 25Ω, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics 5: ISD ≤ 15A, di/dt ≤ 200A/µs, VDD ≤ 40V, Starting TJ = 25°C FDMC15N06 Rev. A 2 www.fairchildsemi.com FDMC15N06 N-Channel MOSFET Package Marking and Ordering Information Figure 2. Transfer Characteristics 50 50 VGS = 20 V 15 V 10 V 8V 7V 6V 5V 10 ID, Drain Current[A] ID, Drain Current[A] Figure 1. On-Region Characteristics 10 o 150 C o 25 C o -55 C *Notes: 1. 250µs Pulse Test *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 1 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 7 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.20 0.15 VGS = 10V 0.10 VGS = 20V 0.05 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.00 *Note: TC = 25 C 0 10 20 30 ID, Drain Current [A] 40 1 0.0 50 Figure 5. Capacitance Characteristics 400 200 0 0.1 FDMC15N06 Rev. A 2.0 Figure 6. Gate Charge Characteristics Coss Ciss *Note: 1. VGS = 0V 2. f = 1MHz Crss VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 2. 250µs Pulse Test 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 10 800 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.25 RDS(ON) [Ω], Drain-Source On-Resistance 2 8 6 4 2 0 1 10 VDS, Drain-Source Voltage [V] 3 VDS = 11V VDS = 30V VDS = 44V *Note: ID = 15A 0 2 4 6 8 10 Qg, Total Gate Charge [nC] 12 www.fairchildsemi.com FDMC15N06 N-Channel MOSFET Typical Performance Characteristics FDMC15N06 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 15A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 100 16 ID, Drain Current [A] 100µs 10 ID, Drain Current [A] 1ms 10ms 1 Operation in This Area is Limited by R DS(on) 100ms 1s 10s 100s DC *Notes: 0.1 o 1. TC = 25 C o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 VDS, Drain-Source Voltage [V] 12 8 4 0 25 100 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE o RθJA = 125 C/W 0.001 0.001 0.01 0.1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) FDMC15N06 Rev. A 4 www.fairchildsemi.com FDMC15N06 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDMC15N06 Rev. A 5 www.fairchildsemi.com FDMC15N06 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) GS G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lta g e D r o p FDMC15N06 Rev. A 6 www.fairchildsemi.com FDMC15N06 N-Channel MOSFET Dimensional Outline and Pad Layout FDMC15N06 Rev. A 7 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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