FDA8440 N-Channel PowerTrench® MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS(on) = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Electronic Steering • 160A Guarantee for 2 sec • Integrated Starter/ Alternator • RoHS Compliant • Distributed Power Architectures and VRMs • Primary Switch for 12V systems D G TO-3PN G DS S MOSFET Maximum Ratings T C Symbol = 25oC unless otherwise noted Ratings Units VDSS Drain to Source Voltage 40 V VGSS Gate to Source Voltage ±20 V 100 A - Continuous (TA = 25 C, VGS = 10V, RθJA = 40 C/W ) 30 A - Pulsed 500 A 1682 mJ ID EAS PD TJ, TSTG Parameter Drain Current - Continuous (TC = 155oC) o o Single Pulsed Avalanche Energy (Note 1) Power dissipation 306 W Derate above 25oC 2.04 W/oC -55 to +175 oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient ©2007 Fairchild Semiconductor Corporation FDA8440 Rev. A2 (Note 2) 1 0.49 o C/W 40 o C/W www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET March 2008 Device Marking Device Package Reel Size Tape Width Quantity FDA8440 FDA8440 TO-3PN N/A N/A 30units Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units 40 -- -- V -- -- 1 μA Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0V, ID = 250μA VDS = 32V VGS = 0V 150oC -- -- 250 μA VGS = ±20V -- -- ±100 nA VDS = VGS, ID = 250μA 1 -- 3 V VGS = 4.5V, ID = 80A -- 1.56 2.2 VGS = 10V, ID = 80A -- 1.46 2.1 VGS = 10V, ID = 80A, TC = 175oC -- 2.82 4.1 TC = On Characteristics VGS(th) Gate to Source Threshold Voltage RDS(on) Static Drain-Source On-Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 18600 24740 pF VDS = 25V, VGS = 0V, f = 1.0MHz -- 1840 2450 pF -- 1400 2100 pF RG Gate Resistance VGS = 0.5V, f = 1MHz -- 1.1 -- Ω Qg(tot) Total Gate Charge at 10V VGS = 0V to 10V -- 345 450 nC Qg(2) Threshold Gate Charge VGS = 0V to 2V VDD = 20V -- 32.5 -- nC Qgs Gate to Source Gate Charge ID = 80A -- 49 -- nC Qgs2 Gate Charge Threshold to Plateau Ig = 1.0mA -- 16.5 -- nC Qgd Gate to Drain “Miller” Charge -- 74 -- nC -- 175 360 ns Switching Characteristics (VGS = 10V) tON Turn-On Time td(on) Turn-On Delay Time tr Rise Time td(off) tf tOFF -- 43 95 ns -- 130 275 ns Turn-Off Delay Time -- 435 875 ns Fall Time -- 290 590 ns Turn-Off Time -- 730 1470 ns VDD = 20V,ID = 80A VGS = 10V, RGEN = 7Ω Drain-Source Diode Characteristics and Maximum Ratings ISD = 80A -- -- 1.25 V ISD = 40A -- -- 1.0 V Reverse Recovery Time ISD = 75A, dISD/dt = 100A/μs -- 59 -- ns Reverse Recovery Charge ISD = 75A, dISD/dt = 100A/μs -- 77 -- nC VSD Source to Drain Diode Voltage trr QRR NOTES: 1: Starting TJ = 25°C, L = 1mH, IAS = 58A, VDD = 36V, VGS = 10V. 2: Pulse width = 100s FDA8440 Rev. A2 2 www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 400 100 ID,Drain Current[A] ID,Drain Current[A] 100 VGS = 10.0 V 7.0 V 5.0 V 3.5 V 3.0 V 2.5 V 10 o 150 C o -55 C 10 o 25 C * Notes : 1. 250μs Pulse Test 1 * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 0.4 0.04 2. TC = 25 C 0.1 VDS,Drain-Source Voltage[V] 1 1 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6 1000 VGS = 4.5V IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 2 4 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.60 1.55 1.50 VGS = 10V 1.45 100 o 150 C o 25 C 10 Notes: 1. VGS = 0V o * Note : TJ = 25 C 0 50 100 150 ID, Drain Current [A] 200 2. 250μs Pulse Test 1 0.3 250 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 18000 12000 * Note: 1. VGS = 0V 2. f = 1MHz Coss 1.2 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 24000 0.6 0.9 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 30000 Capacitances [pF] 0 6000 VDS = 25V VDS = 20V VDS = 15V 8 6 4 2 Crss 0 -1 10 FDA8440 Rev. A2 0 10 VDS, Drain-Source Voltage [V] 1 10 0 20 3 * Note : ID = 80A 0 100 200 300 Qg, Total Gate Charge [nC] 400 www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 rDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.5 0.0 -100 200 5000 100 1000 ID, Drain Current [A] 200 IAS, AVALANCHE CURRENT(A) -50 0 50 100 150 o TJ, Junction Temperature [ C] o TJ = 25 C o TJ = 150 C 100μ s 100 Operation in This Area is Limited by R DS(on) 10 1ms 10ms * Notes : 1 o 1. TC = 25 C o 1 0.01 0.1 0.1 1 10 100 1000 200 Figure 10. Safe Operating Area Figure 9. Unclamped Inductive Switching Capability 10 * Notes : 1. VGS = 10V 2. ID = 80A 10000 2. TJ = 175 C 3. Single Pulse 1 100ms 10 VDS, Drain-Source Voltage [V] tAV, TIME IN AVALANCHE(ms) 50 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 0.02 t2 * Notes : 0.01 o 1. ZθJC(t) = 0.49 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 FDA8440 Rev. A2 PDM 0.05 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 0 10 www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDA8440 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA8440 Rev. A2 5 www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDA8440 Rev. A2 6 www.fairchildsemi.com FDA8440 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA8440 Rev. A2 7 www.fairchildsemi.com Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® tm The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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