UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5 Features Description • RDS(on) = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Gate Charge ( Typ. 6.2nC) • Low Crss ( Typ. 2.5pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant D G S D-PAK MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS Drain to Source Voltage Gate to Source Voltage ID Drain Current IDM EAS IAR EAR dv/dt Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG TL Parameter -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (TC = 25oC) - Derate above 25oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDD3N50NZ 500 ±25 2.5 1.5 10 114 2.5 4 10 40 0.3 -55 to +150 Units V V 300 oC Ratings Units A A mJ A mJ V/ns W W/oC oC *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction to Case 3.1 RJA Thermal Resistance, Junction to Ambient 90 ©2011 Fairchild Semiconductor Corporation FDD3N50NZ Rev. C0 1 oC/W www.fairchildsemi.com FDD3N50NZ N-Channel MOSFET November 2011 Device Marking FDD3N50NZ Device FDD3N50NZTM Package D-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 500 - - V - 0.5 - V/oC - - 1 10 ±10 3.0 - 2.1 5.0 2.5 V - 1.9 - S - 210 30 2.5 6.2 1.4 280 45 5 8 - pF pF pF nC nC (Note 4, 5) - 3.1 - nC (Note 4, 5) - 10 15 26 17 30 40 60 45 ns ns ns ns - 190 2.5 10 1.4 - A A V ns - 0.52 - C Off Characteristics BVDSS BVDSS TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to 25oC VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V,TC = 125oC VGS = ±25V, VDS = 0V A A On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 1.25A VDS = 20V, ID = 1.25A (Note 4) Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V ID = 2.5A VGS = 10V Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 2.5A VGS = 10V, RGEN = 25 Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage VGS = 0V, ISD = 2.5A Reverse Recovery Time VGS = 0V, ISD = 2.5A dIF/dt = 100A/s Reverse Recovery Charge (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 36.6mH, IAS = 2.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 2.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Dual Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDD3N50NZ Rev. C0 2 www.fairchildsemi.com FDD3N50NZ N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics FDD3N50NZ Rev. C0 3 www.fairchildsemi.com FDD3N50NZ N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 9. Maximum Safe Operating Area vs. Case Temperature Figure 10. Maximum Drain Current Figure 11. Transient Thermal Response Curve PDM t1 FDD3N50NZ Rev. C0 4 t2 www.fairchildsemi.com FDD3N50NZ N-Channel MOSFET Typical Performance Characteristics (Continued) FDD3N50NZ N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD3N50NZ Rev. C0 5 www.fairchildsemi.com FDD3N50NZ N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDD3N50NZ Rev. C0 6 www.fairchildsemi.com FDD3N50NZ N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FDD3N50NZ Rev. C0 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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