FAIRCHILD SSN1N45BTA

SSN1N45B
N-Channel B-FET
450 V, 0.5 A, 4.25 Ω
Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation
mode. These devices are well suited for electronic ballasts
based on half bridge configuration.
•
•
•
•
•
•
0.5 A, 450 V, RDS(on) = 4.25 Ω @ VGS = 10 V
Low Gate Charge (typical 6.5 nC)
Low Crss (typical 6.5 pF)
100% Avalanche Tested
Improved dv/dt Capability
Gate-Source Voltage ± 50V Guaranteed
D
G
G
D
TO-92
S
S
Absolute Maximum Ratings T
Symbol
VDSS
ID
o
C
= 25 C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
SSN1N45BTA
450
Unit
V
0.5
A
0.32
A
4.0
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 50
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
108
mJ
IAR
Avalanche Current
(Note 1)
0.5
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)
(Note 1)
0.25
5.5
0.9
mJ
V/ns
W
2.5
0.02
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
- Pulsed
(Note 1)
(Note 3)
Power Dissipation (TL = 25°C)
TJ, Tstg
TL
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJL
Thermal Resistance, Junction-to-Lead, Max.
Parameter
(Note 5a)
SSN1N45BTA
50
Unit
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
(Note 5b)
140
°C/W
©2002 Fairchild Semiconductor Corporation
SSN1N45B Rev. C0
1
www.fairchildsemi.com
SSN1N45B — N-Channel B-FET
November 2013
Part Number
SSN1N45BTA
Electrical Characteristics T
Symbol
Package
TO-92
Top Mark
1N45B
Packing Method
AMMO
Reel Size
N/A
Tape Width
N/A
Quantity
2000 units
o
C
= 25 C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
450
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.5
VDS = 450 V, VGS = 0 V
--
--
10
µA
VDS = 360 V, TC = 125°C
--
--
100
µA
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
VGS = 50 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -50 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.3
3.0
3.7
V
VDS = VGS, ID = 250 mA
3.5
4.2
4.9
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.25 A
--
3.4
4.25
Ω
gFS
Forward Transconductance
VDS = 50 V, ID = 0.25 A
--
0.7
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
185
240
pF
--
29
40
pF
--
6.5
8.5
pF
--
7.5
25
ns
--
21
50
ns
--
23
55
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 225 V, ID = 0.5 A,
RG = 25 Ω
(Note 4)
VDS = 360 V, ID = 0.5 A,
VGS = 10 V
(Note 4)
--
36
80
ns
--
6.5
8.5
nC
--
0.9
--
nC
--
3.2
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
0.5
ISM
--
--
4.0
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 0.5 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 0.5 A,
dIF / dt = 100 A/µs
--
102
--
ns
--
0.26
--
µC
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 75 mH, IAS = 1.6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 0.5 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
5. a) Reference point of the RθJL is the drain lead.
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment.
(RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RθCA is determined by the user’s board design)
©2002 Fairchild Semiconductor Corporation
SSN1N45B Rev. C0
2
www.fairchildsemi.com
SSN1N45B — N-Channel B-FET
Package Marking and Ordering Information
SSN1N45B — N-Channel B-FET
!
VGS
15.0 V
10.0 V
8.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
ID, Drain Current [A]
10
ID , Drain Current [A]
Top :
-1
10
0
150℃
10
25℃
-55℃
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
-1
-1
0
10
10
1
10
10
2
6
4
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
12
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
10
VGS = 10V
8
VGS = 20V
6
4
2
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
-1
0
0
1
2
3
4
10
5
0.2
0.4
0.6
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
400
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 90V
10
VDS = 225V
VGS, Gate-Source Voltage [V]
300
Ciss
Capacitance [pF]
0.8
ID, Drain Current [A]
200
Coss
100
Crss
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
VDS = 360V
8
6
4
2
※ Note : ID = 0.5 A
0
-1
10
0
10
0
1
10
VDS, Drain-Source Voltage [V]
1
2
3
4
5
6
7
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
SSN1N45B Rev. C0
0
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
(continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 0.25 A
0.5
0.0
-100
200
-50
0
o
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
0.6
Operation in This Area
is Limited by R DS(on)
1
0.5
100 µs
1 ms
10 ms
100 ms
1s
0
10
0.4
ID, Drain Current [A]
ID, Drain Current [A]
10
0.3
-1
10
DC
0.2
※ Notes :
o
-2
1. TC = 25 C
10
o
2. TJ = 150 C
3. Single Pulse
0.1
-3
10
0
1
10
2
10
0.0
25
3
10
10
50
75
Figure 9. Maximum Safe Operating Area
ZθJL(t), Thermal Response [oC/W]
10
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
2
D = 0 .5
10
0 .2
1
0 .1
PDM
0 .0 5
10
t1
0 .0 2
0
t2
0 .0 1
10
※ N o te s :
1 . Z θ J L (t) = 5 0 ℃ / W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T L = P D M * Z θ J L (t)
s i n g l e p u ls e
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t1 , R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
SSN1N45B Rev. C0
4
www.fairchildsemi.com
SSN1N45B — N-Channel B-FET
!
SSN1N45B — N-Channel B-FET
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
Time
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2002 Fairchild Semiconductor Corporation
SSN1N45B Rev. C0
5
www.fairchildsemi.com
SSN1N45B — N-Channel B-FET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2002 Fairchild Semiconductor Corporation
SSN1N45B Rev. C0
6
www.fairchildsemi.com
SSN1N45B — N-Channel B-FET
Mechanical Dimensions
Figure 16. TO92, Molded, 3-Lead, 0.200 In Line Spacing LD Form ( J61Z Option)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO92-F03
©2002 Fairchild Semiconductor Corporation
SSN1N45B Rev. C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2002 Fairchild Semiconductor Corporation
SSN1N45B Rev. C0
8
www.fairchildsemi.com
SSN1N45B — N-Channel B-FET
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