FDPF190N15A N-Channel PowerTrench® MOSFET 150 V, 27.4 A, 19 mΩ Features Description • RDS(on) = 14.7 mΩ (Typ.) @ VGS = 10 V, ID = 27.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Low Gate Charge, QG = 31 nC (Typ.) • Low Crss (Typ. 56 pF) • Fast Switching Speed Applications • Improved dv/dt Capability • Consumer Appliances • RoHS Compliant • LED TV • Synchronous Rectification for ATX / Sever / Telecom PSU • Uninterruptible Power Supply • Micro Solar Inverter D G D S G TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 25oC) ±20 V 17.4 A (Note 1) 110 A (Note 2) 261 mJ (Note 3) 6.0 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL Unit V 27.4 - Continuous (TC = 100oC) - Pulsed FDPF190N15A 150 - Derate Above 25oC 33 W 0.26 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FDPF190N15A RθJC Thermal Resistance, Junction to Case, Max. 3.8 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Fairchild Semiconductor Corporation FDPF190N15A Rev. C1 1 Unit oC/W www.fairchildsemi.com FDPF190N15A — N-Channel PowerTrench® MOSFET November 2013 Part Number FDPF190N15A Top Mark FDPF190N15A Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.14 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC VDS = 120 V, VGS = 0 V - - 1 VDS = 120 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.0 - 4.0 V Static Drain to Source On Resistance - 14.7 19.0 mΩ gFS Forward Transconductance VGS = 10 V, ID = 27.4 A VDS = 10 V, ID = 27.4 A - 64 - S - 2020 2685 pF - 700 930 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 25 V, VGS = 0 V, f = 1 MHz - 56 85 VDS = 75 V, VGS = 0 V - 252 - pF VDS = 120 V, ID = 27.4 A, VGS = 10 V - 30 39 nC - 8.8 - nC - 7.3 - nC - 1.5 - Ω - 18 46 ns - 16 42 ns - 32 74 ns - 8 26 ns (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 75 V, ID = 27.4 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 27.4 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 110 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 27.4 A - - 1.3 V trr Reverse Recovery Time - 76 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 27.4 A, dIF/dt = 100 A/μs, VDD = 120 V - 0.18 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 0.33 mH, IAS = 29 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 27.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation FDPF190N15A Rev. C1 2 www.fairchildsemi.com FDPF190N15A — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 200 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics 200 10 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test o 4 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 3 4 5 VGS, Gate-Source Voltage[V] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.020 200 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 100 VGS = 10V 0.015 VGS = 20V o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.010 *Note: TC = 25 C 0 25 50 75 ID, Drain Current [A] 100 1 0.0 125 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 5000 10 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] 1000 Coss 100 10 *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 5 0.1 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDPF190N15A Rev. C1 6 4 2 0 100 200 3 VDS = 30V VDS = 75V VDS = 120V 8 *Note: ID = 27.4A 0 8 16 24 Qg, Total Gate Charge [nC] 32 www.fairchildsemi.com FDPF190N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 27.4A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 500 30 100 25 100μs ID, Drain Current [A] ID, Drain Current [A] 2.0 10 1ms Operation in This Area is Limited by R DS(on) 1 100ms DC *Notes: 0.1 10ms 20 15 10 o 1. TC = 25 C 5 o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 300 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 2.5 EOSS, [μJ] 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 VDS, Drain to Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDPF190N15A Rev. C1 150 4 www.fairchildsemi.com FDPF190N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDPF190N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve ZθJC (t), Thermal Response [o]C/W] Thermal Response [ZθJC 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 o 1. ZθJC(t) = 3.8 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 ©2011 Fairchild Semiconductor Corporation FDPF190N15A Rev. C1 t2 *Notes: -4 10 -3 -2 -1 0 10 10 10 10 Rectangular [sec] t1, RectangularPulse PulseDuration Duration [sec] 5 1 10 100 www.fairchildsemi.com FDPF190N15A — N-Channel PowerTrench® MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDPF190N15A Rev. C1 6 www.fairchildsemi.com FDPF190N15A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDPF190N15A Rev. C1 7 www.fairchildsemi.com FDPF190N15A — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF22S-003 ©2011 Fairchild Semiconductor Corporation FDPF190N15A Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2011 Fairchild Semiconductor Corporation FDPF190N15A Rev. 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