Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V, –0.83 A, 0.5 : Features tm General Description Max rDS(on) = 0.5 : at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on)@VGS = –1.5 V. Max rDS(on) = 0.7 : at VGS = –2.5 V, ID = –0.70 A Max rDS(on) = 1.2 : at VGS = –1.8 V, ID = –0.43 A Max rDS(on) = 1.8 : at VGS = –1.5 V, ID = –0.36 A Application HBM ESD protection level = 1400 V (Note 3) Li-Ion Battery Pack RoHS Compliant G S 1 G D 3 S SC89-3 D 2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Ratings –20 Units V ±8 V –0.83 –1.0 Power Dissipation (Note 1a) 0.625 Power Dissipation (Note 1b) 0.446 Operating and Storage Junction Temperature Range –55 to +150 A W °C Thermal Characteristics RTJA Thermal Resistance, Junction to Ambient (Note 1a) 200 RTJA Thermal Resistance, Junction to Ambient (Note 1b) 280 °C/W Package Marking and Ordering Information Device Marking E Device FDY102PZ ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 Package SC89-3 1 Reel Size 7” Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET February 2010 FDY102PZ Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = –250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 PA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 PA –1.0 V –20 V -11 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250 PA, referenced to 25 °C rDS(on) gFS Static Drain to Source On-Resistance Forward Transconductance –0.4 –0.7 3 mV/°C VGS = –4.5 V, ID = –0.83 A 0.28 0.5 VGS = –2.5 V, ID = –0.70 A 0.36 0.7 VGS = –1.8 V, ID = –0.43 A 0.47 1.2 VGS = –1.5 V, ID = –0.36 A 0.62 1.8 VGS = –4.5 V, ID = –0.83 A, TJ =125 °C 0.39 0.85 VDD = –5 V, ID = –0.83 A 2 : S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = –10 V, VGS = 0 V, f = 1 MHz 100 135 pF 23 35 pF 18 30 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 3.5 10 ns tr Rise Time 2.9 10 ns td(off) Turn-Off Delay Time 23 37 ns tf Fall Time 13 23 ns Qg Total Gate Charge 2.2 3.1 Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = –10 V, ID = –0.83 A VGS = –4.5 V, RGEN = 6 : VDD = –10 V, ID = –0.83 A VGS = –4.5 V nC 0.3 nC 0.6 nC Drain-Source Diode Characteristics and Maximum Rating IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = –0.52 A –0.52 (Note 2) IF = –0.83 A, dIF/dt = 100 A/Ps A –1.0 –1.2 V 18 31 ns 3.8 10 nC Notes: 1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the user's board design. a) 200 oC/W when mounted on a 1 in2 pad of 2 oz copper. b) 280 oC/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 2 www.fairchildsemi.com FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4.5 1.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -2.5 V 0.8 VGS = -1.5 V 0.6 VGS = -2.0 V VGS = -1.8 V 0.4 0.2 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 0.0 0.0 0.5 1.0 1.5 4.0 3.5 VGS = -1.8 V 3.0 VGS = -2.0V 2.5 2.0 VGS = -2.5 V 1.5 1.0 0.5 0.0 2.0 VGS = -4.5 V 0.5 Figure 1. On Region Characteristics 1.5 2.0 2.5 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 2.0 ID = -0.83 A VGS = -4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.0 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 1.6 ID = -0.415 A 1.2 0.8 TJ = 125 oC 0.4 0.0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) TJ = 25 oC 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 1.0 1 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5%MAX VGS = -1.5 V 0.8 VDS = -5 V 0.6 TJ = 125 oC 0.4 TJ = 25 oC 0.2 TJ = -55 oC 0.0 0.5 1.0 1.5 TJ = 125 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0 2.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 500 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -0.83 A Ciss CAPACITANCE (pF) 4 3 VDD = -8 V VDD = -10 V 2 VDD = -12 V 100 Coss 10 Crss f = 1 MHz VGS = 0 V 1 0 0.0 0.5 1.0 1.5 2.0 2.5 1 0.1 3.0 1 20 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 5 2 VGS = 0 V 1 3 10 -ID, DRAIN CURRENT (A) -Ig, GATE LEAKAGE CURRENT (uA) 10 1 10 TJ = 125 oC -1 10 TJ = 25 oC 10 ms 0.1 THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 ms DC RTJA = 280 oC/W TA = 25 oC -3 10 1 ms 0 3 6 9 12 0.01 0.1 15 -VGS, GATE TO SOURCE VOLTAGE (V) 1 10 60 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 30 VGS = -4.5 V SINGLE PULSE 10 o RTJA = 280 C/W o TA = 25 C 1 0.2 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 4 www.fairchildsemi.com FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZTJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 280 C/W 0.02 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 5 www.fairchildsemi.com FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1.70 1.50 0.50 0.35 0.25 0.50 3 1.70 1.50 0.98 0.78 1 1.14 1.80 2 (0.15) 0.50 0.50 0.66 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 0.43 0.28 0.20 0.04 SEE DETAIL A 0.54 0.34 DETAIL A 0.10 0.00 SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 6 www.fairchildsemi.com FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET Dimensional Outline and Pad Layout tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 7 www.fairchildsemi.com FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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