FAIRCHILD FDMC8327L

FDMC8327L
N-Channel PowerTrench® MOSFET
40 V, 14 A, 9.7 mΩ
Features
General Description
„ Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A
This
„ Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A
Semiconductor’s advanced Power Trench® process that has
N-Channel
MOSFET
is
produced
using
Fairchild
been especially tailored to minimize the on-state resistance and
„ Low Profile - 0.8mm max in Power 33
yet maintain superior switching performance.
„ 100% UIL test
Application
„ RoHS Compliant
„ DC-DC Conversion
Bottom
Top
8
1
7
6
D D D D
5
S
D
S
D
S
D
G
D
G S S S
2 3 4
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current - Continuous (Package limited)
ID
TC = 25 °C
- Continuous (Silicon limited)
TC = 25 °C
- Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
14
43
(Note 1a)
- Pulsed
12
A
60
Single Pulse Avalanche Energy
EAS
Ratings
40
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
25
30
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
4.2
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8327L
Device
FDMC8327L
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C1
Package
Power 33
1
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC8327L N-Channel PowerTrench® MOSFET
May 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
3.0
V
40
V
22
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 12 A
7.4
9.7
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 10 A
9.4
12.5
VGS = 10 V, ID = 12 A, TJ = 125 °C
11
14.5
VDD = 5 V, ID = 12 A
52
gFS
Forward Transconductance
1.0
1.7
-5
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20 V, VGS = 0 V,
f = 1 MHZ
0.1
1235
1850
347
520
pF
pF
21
35
pF
0.6
1.3
Ω
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
8.4
17
VDD = 20 V, ID = 12 A,
VGS = 10 V, RGEN = 6 Ω
2.2
10
ns
20
32
ns
2.2
10
ns
18.5
26
nC
9.7
14
tf
Fall Time
Qg(TOT)
Total Gate Charge
VGS = 0V to 10 V
Qg(TOT)
Total Gate Charge
VGS = 0V to 5 V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 20 V,
ID = 12 A
nC
3.3
nC
2.6
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward
Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1.8 A
(Note 2)
0.7
1.2
VGS = 0 V, IS = 12 A
(Note 2)
0.8
1.3
IF = 12 A, di/dt = 100 A/s
V
32
51
ns
10
20
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 13 A, VDD = 36 V, VGS = 10 V.
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C1
2
www.fairchildsemi.com
FDMC8327L N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
4
VGS = 10 V
VGS = 6 V
50
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
VGS = 4.5 V
VGS = 4 V
40
VGS = 3.5 V
30
20
VGS = 3 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.3
0.6
0.9
1.2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
3
VGS = 3.5 V
2
VGS = 4 V
1
VGS = 4.5 V
0
1.5
0
10
Figure 1. On Region Characteristics
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
SOURCE ON-RESISTANCE (mΩ)
1.4
rDS(on), DRAIN TO
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
50
60
30
ID = 12 A
VGS = 10 V
ID = 12 A
25
15
TJ = 125 oC
10
2
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
TJ = 150 oC
30
TJ =
25 oC
20
10
TJ = -55 oC
2.5
3.0
3.5
4.0
10
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C1
8
100
VDS = 5 V
2.0
6
Figure 4. On-Resistance vs Gate to
Source Voltage
40
1.5
4
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
1.0
TJ = 25 oC
5
0
-50
60
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
20
Figure 3. Normalized On Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.7
1.5
20
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
VGS = 10 V
VGS = 6 V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMC8327L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
ID = 12 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 20 V
6
VDD = 16 V
VDD = 24 V
4
1000
2
Coss
100
Crss
10
f = 1 MHz
VGS = 0 V
0
0
4
8
12
16
1
0.1
20
1
Figure 7. Gate Charge Characteristics
50
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
40
Figure 8. Capacitance vs Drain
to Source Voltage
20
10
TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
40
VGS = 10 V
30
VGS = 4.5 V
20
10
Limited by package
1
0.01
0.1
1
10
0
25
30
50
o
RθJC = 4.2 C/W
75
100
125
150
o
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
300
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
10
1
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
0.1
1s
10 s
DC
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01
0.1
1
10
100200
10
1
0.5
-3
10
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C1
100
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC8327L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
SINGLE PULSE
o
0.001
-3
10
t2
RθJA = 125 C/W
0.01
-2
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C1
5
www.fairchildsemi.com
FDMC8327L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMC8327L N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C1
6
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C1
7
www.fairchildsemi.com
FDMC8327L N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
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MICROCOUPLER™
TRUECURRENT®*
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SPM®
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