FDMC8327L N-Channel PowerTrench® MOSFET 40 V, 14 A, 9.7 mΩ Features General Description Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A This Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A Semiconductor’s advanced Power Trench® process that has N-Channel MOSFET is produced using Fairchild been especially tailored to minimize the on-state resistance and Low Profile - 0.8mm max in Power 33 yet maintain superior switching performance. 100% UIL test Application RoHS Compliant DC-DC Conversion Bottom Top 8 1 7 6 D D D D 5 S D S D S D G D G S S S 2 3 4 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current - Continuous (Package limited) ID TC = 25 °C - Continuous (Silicon limited) TC = 25 °C - Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 14 43 (Note 1a) - Pulsed 12 A 60 Single Pulse Avalanche Energy EAS Ratings 40 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 25 30 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 4.2 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC8327L Device FDMC8327L ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev.C1 Package Power 33 1 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC8327L N-Channel PowerTrench® MOSFET May 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V 40 V 22 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 12 A 7.4 9.7 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 10 A 9.4 12.5 VGS = 10 V, ID = 12 A, TJ = 125 °C 11 14.5 VDD = 5 V, ID = 12 A 52 gFS Forward Transconductance 1.0 1.7 -5 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20 V, VGS = 0 V, f = 1 MHZ 0.1 1235 1850 347 520 pF pF 21 35 pF 0.6 1.3 Ω ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time 8.4 17 VDD = 20 V, ID = 12 A, VGS = 10 V, RGEN = 6 Ω 2.2 10 ns 20 32 ns 2.2 10 ns 18.5 26 nC 9.7 14 tf Fall Time Qg(TOT) Total Gate Charge VGS = 0V to 10 V Qg(TOT) Total Gate Charge VGS = 0V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 20 V, ID = 12 A nC 3.3 nC 2.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.8 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 12 A (Note 2) 0.8 1.3 IF = 12 A, di/dt = 100 A/s V 32 51 ns 10 20 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a b. 125 °C/W when mounted on a minimum pad of 2 oz copper 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 13 A, VDD = 36 V, VGS = 10 V. ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev.C1 2 www.fairchildsemi.com FDMC8327L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4 VGS = 10 V VGS = 6 V 50 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 VGS = 4.5 V VGS = 4 V 40 VGS = 3.5 V 30 20 VGS = 3 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.3 0.6 0.9 1.2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3 V 3 VGS = 3.5 V 2 VGS = 4 V 1 VGS = 4.5 V 0 1.5 0 10 Figure 1. On Region Characteristics 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 SOURCE ON-RESISTANCE (mΩ) 1.4 rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 50 60 30 ID = 12 A VGS = 10 V ID = 12 A 25 15 TJ = 125 oC 10 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) TJ = 150 oC 30 TJ = 25 oC 20 10 TJ = -55 oC 2.5 3.0 3.5 4.0 10 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev.C1 8 100 VDS = 5 V 2.0 6 Figure 4. On-Resistance vs Gate to Source Voltage 40 1.5 4 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 1.0 TJ = 25 oC 5 0 -50 60 50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 20 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.7 1.5 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 VGS = 10 V VGS = 6 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC8327L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 12 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V 6 VDD = 16 V VDD = 24 V 4 1000 2 Coss 100 Crss 10 f = 1 MHz VGS = 0 V 0 0 4 8 12 16 1 0.1 20 1 Figure 7. Gate Charge Characteristics 50 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 40 Figure 8. Capacitance vs Drain to Source Voltage 20 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC 40 VGS = 10 V 30 VGS = 4.5 V 20 10 Limited by package 1 0.01 0.1 1 10 0 25 30 50 o RθJC = 4.2 C/W 75 100 125 150 o tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 300 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 1 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s 10 s DC RθJA = 125 oC/W TA = 25 oC 0.01 0.01 0.1 1 10 100200 10 1 0.5 -3 10 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev.C1 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC8327L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE o 0.001 -3 10 t2 RθJA = 125 C/W 0.01 -2 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev.C1 5 www.fairchildsemi.com FDMC8327L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC8327L N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev.C1 6 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev.C1 7 www.fairchildsemi.com FDMC8327L N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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