VISHAY 31DQ09GTR

VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.3 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation forenhanced mechanical
strength and moisture resistance
C-16
• Guard ring for enhanced ruggedness and
long termreliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
DO-201AD (C-16)
IF(AV)
3.3 A
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
VR
90 V, 100 V
VF at IF
See Electrical table
IRM max.
3.0 mA at 125 °C
TJ max.
150 °C
Diode variation
Single die
EAS
3.0 mJ
DESCRIPTION
The VS-31DQ..G... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
3 Apk, TJ = 25 °C
TJ
VALUES
UNITS
3.3
A
90/100
V
370
A
0.85
V
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak
reverse voltage
VS-31DQ09G
VS-31DQ09G-M3
VS-31DQ10G
VS-31DQ10G-M3
UNITS
90
90
100
100
V
VR
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current, TJ = 25 °C
See fig. 6
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1 A, 18 μs square pulse
3.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
A
Repetitive avalanche current
Revision: 19-Sep-11
50 % duty cycle at TC = 53.4 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
3.3
370
A
60
Document Number: 93322
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
3A
Maximum forward voltage drop
See fig. 1
VFM (1)
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of charge
IRM (1)
CT
LS
dV/dt
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
UNITS
0.85
0.97
V
0.69
0.80
0.1
mA
3
110
pF
9.0
nH
10 000
V/μs
VALUES
UNITS
- 40 to 150
°C
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Without cooling fin
80
Typical thermal resistance,
junction to lead
RthJL
DC operation
34
Approximate weight
Marking device
Revision: 19-Sep-11
Case style C-16
°C/W
1.2
g
0.042
oz.
31DQ09G
31DQ10G
Document Number: 93322
2
For technical questions within your region: DiodesAm[email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
Vishay Semiconductors
10
Allowable Lead Temperature (°C)
IF - Instantaneous Forward Current (A)
www.vishay.com
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
150
120
DC
90
60
Square wave (D = 0.50)
80 % Rated VR applied
30
see note (1)
0
0
0.3
0.6
0.9
1.2
VFM - Forward Voltage Drop (V)
93322_01
0
93322_04
Fig. 1 - Maximum Forward Voltage Drop Characteristics
3
4
5
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Average Power Loss (W)
TJ = 150 °C
IR - Reverse Current (mA)
2
4
10
1
TJ = 125 °C
0.1
0.01
0.001
0.0001
TJ = 25 °C
3
DC
RMS Limit
2
1
0
0
0
20
40
60
80
0
100
VR - Reverse Voltage (V)
93322_02
TJ = 25 °C
100
10
0
93322_03
40
80
120
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
160
2
3
4
5
Fig. 5 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
1000
1
Average Forward Current - IF(AV) (A)
93322_05
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1
1000
100
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
10
10
93322_06
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 19-Sep-11
Document Number: 93322
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
31
D
Q
10
G
TR
-
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
31 = Current Rating, 3.3 A
3
-
D = DO-201 (C-16)
4
-
Q = Schottky Q.. series
5
-
10 = Voltage ratings
6
-
G = Schottky generation
7
-
None = Bulk package
8
-
09 = 90 V
10 = 100 V
TR = Tape and reel package
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-31DQ09G
500
500
Bulk
VS-31DQ09GTR
1200
1200
Tape and reel
VS-31DQ09G-M3
500
500
Bulk
VS-31DQ09GTR-M3
1200
1200
Tape and reel
VS-31DQ10G
500
500
Bulk
VS-31DQ10GTR
1200
1200
Tape and reel
VS-31DQ10G-M3
500
500
Bulk
VS-31DQ10GTR-M3
1200
1200
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95242
Part marking information
www.vishay.com/doc?95304
Packaging information
www.vishay.com/doc?95338
SPICE model
www.vishay.com/doc?95300
Revision: 19-Sep-11
Document Number: 93322
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-201AD (C-16)
DIMENSIONS in millimeters (inches)
Ø 5.8 (0.23)
MAX.
Cathode band
21.0 (0.83) MIN.
(2 places)
10.0 (0.39)
MAX.
21.0 (0.83) MIN.
(2 places)
10.0 (0.39)
MAX.
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
2.54 (0.100) MAX.
Flash (2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 5.8 (0.23)
MAX.
Revision: 29-Aug-11
Document Number: 95242
1
For technical questions within your region: [email protected], D[email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000