FDP085N10A_F102 N-Channel PowerTrench® MOSFET 100V, 96A, 8.5mΩ Features General Description • RDS(on) = 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • High Power and Current Handling Capability • DC to DC Converters • RoHS Compliant • Synchronous Rectification for Telecommunication PSU • Battery Charger • AC motor drives and Uninterruptible Power Supplies • Off-line UPS D G G DS TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage Units V ±20 V -Continuous (TC = 25oC) 96 68 ID Drain Current -Continuous (TC = 100oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt A (Note 1) 384 A (Note 2) 269 mJ 6.0 V/ns (Note 3) (TC = 25oC) 188 W - Derate above 25oC 1.25 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Ratings 100 -55 to +175 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.8 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2011 Fairchild Semiconductor Corporation FDP085N10A_F102 Rev. A 1 Units oC/W www.fairchildsemi.com FDP085N10A_F102 N-Channel PowerTrench® MOSFET May 2011 Device Marking FDP085N10A Device FDP085N10A_F102 Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V - 0.07 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V,TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1 VDS = 80V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.0 - 4.0 V - 7.35 8.5 mΩ - 72 - S - 2025 2695 pF - 468 620 pF - 20 - pF - 752 - pF - 31 40 nC - 9.7 - nC - 5.0 - nC - 7.5 - nC - 0.97 - Ω - 18 46 ns - 22 54 ns - 29 68 ns - 8 26 ns ID = 250μA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 96A VDS = 10V, ID = 96A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Engry Releted Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshoid to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 50V, VGS = 0V f = 1MHz VDS = 50V, VGS = 0V VGS = 10V, VDS = 50V ID = 96A (Note 4, 5) Drain Open, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50V, ID = 96A VGS = 10V, RGEN = 4.7Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 96 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 384 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 96A - - 1.3 V trr Reverse Recovery Time - 59 - ns Qrr Reverse Recovery Charge VDD = 50V,VGS = 0V, ISD = 96A dIF/dt = 100A/μs (Note 4) - 80 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3 mH, IAS = 13.4 A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 96 A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP085N10A_F102 Rev. A 2 www.fairchildsemi.com FDP085N10A_F102 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information FDP085N10A_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V 100 100 ID, Drain Current[A] ID, Drain Current[A] Figure 2. Transfer Characteristics 300 500 o 175 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test 10 *Notes: 1. VDS = 10V 2. 250μs Pulse Test o 2. TC = 25 C 1 5 0.1 1 VDS, Drain-Source Voltage[V] 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 3 4 5 6 VGS, Gate-Source Voltage[V] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 18 500 o *Note: TC = 25 C IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 16 VGS = 10V 12 8 VGS = 20V o 175 C 100 o 25 C 10 *Notes: 1. VGS = 0V 2. 250μs Pulse Test 4 0 100 200 300 ID, Drain Current [A] 1 0.3 400 Figure 5. Capacitance Characteristics 10 VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1.5 Figure 6. Gate Charge Characteristics 10000 100 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 6 4 2 *Note: ID = 96A 0 1 10 VDS, Drain-Source Voltage [V] FDP085N10A_F102 Rev. A VDS = 20V VDS = 50V VDS = 80V 8 100 3 0 7 14 21 28 Qg, Total Gate Charge [nC] 35 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 96A 0.5 -80 200 Figure 9. Maximum Safe Operating Area -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 1000 100 80 100 ID, Drain Current [A] ID, Drain Current [A] 10μs 100μs 10 1ms Operation in This Area is Limited by R DS(on) 1 *Notes: o 1. TC = 25 C 10ms DC VGS= 10V 60 40 20 o o 2. TJ = 175 C 3. Single Pulse 0.1 1 10 100 VDS, Drain-Source Voltage [V] RθJC = 0.8 C/W 0 25 200 Figure 11. Eoss vs. Drain to Soure Voltage IAS, AVALANCHE CURRENT (A) 30 EOSS, [μJ] 2.0 1.5 1.0 0.5 0 FDP085N10A_F102 Rev. A 20 40 60 80 VDS, Drain to Source Voltage [V] 175 Figure 12. Unclamped Inductive Switching Capability 2.5 0.0 50 75 100 125 150 o TC, Case Temperature [ C] If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] 10 o STARTING TJ = 25 C o STARTING TJ = 150 C 1 0.01 100 4 0.1 1 10 100 300 tAV, TIME IN AVALANCHE (ms) www.fairchildsemi.com FDP085N10A_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP085N10A_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.2 0.1 t1 t2 *Notes: 0.05 o 1. ZθJC(t) = 0.8 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.02 0.01 0.01 Single pulse 0.005 -5 10 FDP085N10A_F102 Rev. A PDM 0.1 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDP085N10A_F102 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP085N10A_F102 Rev. A 6 www.fairchildsemi.com FDP085N10A_F102 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP085N10A_F102 Rev. A 7 www.fairchildsemi.com FDP085N10A_F102 N-Channel PowerTrench® MOSFET Package Dimensions TO-220 FDP085N10A_F102 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I54 FDP085N10A_F102 Rev. A 9 www.fairchildsemi.com FDP085N10A_F102 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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