FDP054N10 N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ Features Description • RDS(on) = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • High Power and Current Handling Capability DC to DC Converters / Synchronous Rectification • RoHS Compliant D G G D S TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Avalanche Energy Ratings 100 Units V ±20 V - Continuous (TC = 25oC, Silicon Limited) 144* - Continuous (TC = 100oC, Silicon Limited) 102 - Continuous (TC = 25oC, Package Limited) 120 - Pulsed A (Note 1) 576 A (Note 2) 1153 mJ 6 V/ns (Note 3) (TC = 25oC) 263 W - Derate above 25oC 1.75 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds -55 to +175 o C 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.57 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2012 Fairchild Semiconductor Corporation FDP054N10 Rev. C1 1 Units o C/W www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET April 2012 Device Marking FDP054N10 Device FDP054N10 Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 100 - - V Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25oC - 0.01 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V - - 1 VDS = 100V, VGS = 0V, TC = 150oC - - 500 μA IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.5 3.5 4.5 V - 4.6 5.5 mΩ - 192 - S nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 75A gFS Forward Transconductance VGS = 10V, ID = 75A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 80V, ID = 75A, VGS = 10V (Note 4,5) - 9985 13280 pF - 935 1245 pF - 390 585 pF - 156 203 nC - 53 - nC - 48 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50V, ID = 75A VGS = 10V, RGEN = 4.7Ω (Note 4,5) - 44 98 ns - 92 194 ns - 80 170 ns - 39 88 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 144 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 576 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.3 V trr Reverse Recovery Time - 57 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD =75A dIF/dt = 100A/μs - 121 - nC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP054N10 Rev. C1 2 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1000 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V * Notes : 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 1000 100 *Notes: 1. 250μs Pulse Test 100 o 150 C o 25 C 10 o -55 C o 2. TC = 25 C 1 10 0.1 3 6 1 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] 1000 6 VGS = 10V 5 VGS = 20V 4 o 150 C 100 o 25 C 10 Notes: 1. VGS = 0V o * Note : TC = 25 C 2. 250μs Pulse Test 3 0 100 200 ID, Drain Current [A] 300 1 0.2 400 Figure 5. Capacitance Characteristics 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 6. Gate Charge Characteristics 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 100000 Ciss Capacitances [pF] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 7 RDS(on) [mΩ], Drain-Source On-Resistance 4 5 6 VGS, Gate-Source Voltage[V] 10000 Coss 1000 Crss * Note: 1. VGS = 0V 2. f = 1MHz 100 0.1 FDP054N10 Rev. C1 1 10 VDS, Drain-Source Voltage [V] VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 * Note : ID = 75A 0 0 30 3 30 60 90 120 Qg, Total Gate Charge [nC] 150 180 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 10mA 0.8 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 1.2 0.8 * Notes : 1. VGS = 10V 2. ID = 75A -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 150 ID, Drain Current [A] 1000 ID, DRAIN CURRENT (A) 1.6 0.4 -80 200 Figure 9. Maximum Safe Operating Area 100 100 μs 10 THIS AREA IS LIMITED BY rDS(on) 1 2.0 DC SINGLE PULSE TJ = MAX RATED Limitted by package 50 1 ms RθJc = 0.57 oC/W 10 ms 100 ms TC = 25 oC 0.1 0.1 100 1 10 100 0 25 400 VDS, DRAIN to SOURCE VOLTAGE (V) 50 75 100 125 o TC, Case Temperature [ C] 150 175 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 0.02 0.01 * Notes : t2 o 1. ZθJC(t) = 0.57 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 FDP054N10 Rev. C1 PDM 0.05 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP054N10 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP054N10 Rev. C1 5 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP054N10 Rev. C1 6 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET Package Dimensions TO-220 Dimensions in Millimeters FDP054N10 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDP054N10 Rev. C1 8 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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