FDB047N10 N-Channel PowerTrench® MOSFET 100V, 164A, 4.7mW Description General Description • RDS(on) = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handing capability Application • RoHS compliant • DC to DC converters / Synchronous Rectification D D G G S D -PAK 2 FDB Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage Drain Current ID IDM Ratings 100 - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) Drain Current - Pulsed Units V ±20 V 164* A 116* A 120 A (Note 1) 656* A EAS Single Pulsed Avalanche Energy (Note 2) 1153 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (TC = 25oC) 375 W 2.5 W/oC -55 to +175 oC - Derate above 25oC 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol RqJC RqJA Parameter Ratings Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper) 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper) ©2012 Fairchild Semiconductor Corporation FDB047N10 Rev. C0 Units 0.4 1 62.5 oC/W 40 www.fairchildsemi.com FDB047N10 N-Channel PowerTrench® MOSFET February 2012 Device Marking FDB047N10 Device FDB047N10 Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250mA, VGS = 0V, TJ = 25oC 100 - - V ID = 250mA, Referenced to 25oC - 0.1 - V/oC Off Characteristics BVDSS DBVDSS DTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 1 VDS = 100V, VGS = 0V, TC = 150oC VDS = 100V, VGS = 0V - - 500 VGS = ±20V, VDS = 0V - - ±100 2.5 3.5 4.5 V - 3.9 4.7 mW - 170 - S - 11500 15265 pF - 1120 1500 pF - 455 680 pF ns mA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250mA Static Drain to Source On Resistance VGS = 10V, ID = 75A gFS Forward Transconductance VDS = 10V, ID = 75A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50V, ID = 75A VGS = 10V, RGEN = 25W (Note 4, 5) VDS = 80V, ID = 75A VGS = 10V (Note 4, 5) - 174 358 - 386 782 ns - 344 698 ns - 244 499 ns - 160 210 nC - 56 - nC - 36 - nC Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 164* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 656 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.25 V trr Reverse Recovery Time - 88 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A dIF/dt = 100A/ms - 245 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25W, Starting TJ = 25°C 3. ISD £ 75A, di/dt £ 200A/ms, VDD £ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width £ 300ms, Duty Cycle £ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB047N10 Rev. C0 2 www.fairchildsemi.com FDB047N10 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 300 8V Figure 2. Transfer Characteristics 400 7V 6.5 V 100 6.0 V 100 5.5 V VGS = 5V o 175 C ID,Drain Current[A] ID,Drain Current[A] 10V o -55 C o 25 C 10 *Notes: 1. 250ms Pulse Test 10 *Notes: 1. VDS = 20V 2. 250ms Pulse Test o 6 0.1 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 5 10 300 8 100 6 VGS = 10V 4 VGS = 20V 2 4 6 VGS,Gate-Source Voltage[V] o 175 C o 25 C 10 *Notes: 1. VGS = 0V o 0 *Note: TJ = 25 C 0 100 200 300 ID, Drain Current [A] 2 0.0 400 Figure 5. Capacitance Characteristics 14000 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 12000 10000 8000 Coss *Note: 1. VGS = 0V 2. f = 1MHz 6000 4000 2000 0 0.1 FDB047N10 Rev. C0 Crss 1 10 VDS, Drain-Source Voltage [V] 2. 250ms Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] 16000 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IS, Reverse Drain Current [A] RDS(ON) [mW], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 8 6 4 2 0 30 3 VDS = 20V VDS = 50V VDS = 80V *Note: ID = 75A 0 30 60 90 120 150 Qg, Total Gate Charge [nC] 180 www.fairchildsemi.com FDB047N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 75A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area 1000 2.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 200 10ms 150 ID, Drain Current [A] ID, Drain Current [A] 100ms 100 1ms 10 1 Operation in This Area is Limited by R DS(on) 10ms 100ms DC *Notes: o 1. TC = 25 C 100 Limited by package 50 o 2. TJ = 175 C 3. Single Pulse 0.1 0.1 1 10 VDS, Drain-Source Voltage [V] 0 25 100 200 50 75 100 125o 150 TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [ZqJC] 1 0.5 0.1 0.2 t1 0.01 0.02 t2 *Notes: 0.01 o 1. ZqJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZqJC(t) Single pulse 1E-3 -5 10 FDB047N10 Rev. C0 PDM 0.1 0.05 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDB047N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDB047N10 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB047N10 Rev. C0 5 www.fairchildsemi.com FDB047N10 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDB047N10 Rev. C0 6 www.fairchildsemi.com FDB047N10 N-Channel PowerTrench® MOSFET Mechanical Dimensions D2-PAK Dimensions in Millimeters FDB047N10 Rev. C0 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 FDB047N10 Rev. 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