FAIRCHILD FDB047N10_12

FDB047N10
N-Channel PowerTrench® MOSFET
100V, 164A, 4.7mW
Description
General Description
• RDS(on) = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet maintain
superior switching performance.
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handing capability
Application
• RoHS compliant
• DC to DC converters / Synchronous Rectification
D
D
G
G
S
D -PAK
2
FDB Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
Drain Current
ID
IDM
Ratings
100
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
Drain Current
- Pulsed
Units
V
±20
V
164*
A
116*
A
120
A
(Note 1)
656*
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
1153
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
6.0
V/ns
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(TC = 25oC)
375
W
2.5
W/oC
-55 to +175
oC
- Derate above 25oC
300
o
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RqJC
RqJA
Parameter
Ratings
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper)
2
Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper)
©2012 Fairchild Semiconductor Corporation
FDB047N10 Rev. C0
Units
0.4
1
62.5
oC/W
40
www.fairchildsemi.com
FDB047N10 N-Channel PowerTrench® MOSFET
February 2012
Device Marking
FDB047N10
Device
FDB047N10
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
ID = 250mA, VGS = 0V, TJ = 25oC
100
-
-
V
ID = 250mA, Referenced to 25oC
-
0.1
-
V/oC
Off Characteristics
BVDSS
DBVDSS
DTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
-
-
1
VDS = 100V, VGS = 0V, TC = 150oC
VDS = 100V, VGS = 0V
-
-
500
VGS = ±20V, VDS = 0V
-
-
±100
2.5
3.5
4.5
V
-
3.9
4.7
mW
-
170
-
S
-
11500
15265
pF
-
1120
1500
pF
-
455
680
pF
ns
mA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250mA
Static Drain to Source On Resistance
VGS = 10V, ID = 75A
gFS
Forward Transconductance
VDS = 10V, ID = 75A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50V, ID = 75A
VGS = 10V, RGEN = 25W
(Note 4, 5)
VDS = 80V, ID = 75A
VGS = 10V
(Note 4, 5)
-
174
358
-
386
782
ns
-
344
698
ns
-
244
499
ns
-
160
210
nC
-
56
-
nC
-
36
-
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
164*
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
656
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
-
-
1.25
V
trr
Reverse Recovery Time
-
88
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/ms
-
245
-
nC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25W, Starting TJ = 25°C
3. ISD £ 75A, di/dt £ 200A/ms, VDD £ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width £ 300ms, Duty Cycle £ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDB047N10 Rev. C0
2
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FDB047N10 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
300
8V
Figure 2. Transfer Characteristics
400
7V
6.5 V
100
6.0 V
100
5.5 V
VGS = 5V
o
175 C
ID,Drain Current[A]
ID,Drain Current[A]
10V
o
-55 C
o
25 C
10
*Notes:
1. 250ms Pulse Test
10
*Notes:
1. VDS = 20V
2. 250ms Pulse Test
o
6
0.1
2. TC = 25 C
1
VDS,Drain-Source Voltage[V]
1
5
10
300
8
100
6
VGS = 10V
4
VGS = 20V
2
4
6
VGS,Gate-Source Voltage[V]
o
175 C
o
25 C
10
*Notes:
1. VGS = 0V
o
0
*Note: TJ = 25 C
0
100
200
300
ID, Drain Current [A]
2
0.0
400
Figure 5. Capacitance Characteristics
14000
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
12000
10000
8000
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
6000
4000
2000
0
0.1
FDB047N10 Rev. C0
Crss
1
10
VDS, Drain-Source Voltage [V]
2. 250ms Pulse Test
0.5
1.0
VSD, Body Diode Forward Voltage [V]
1.4
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
16000
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
IS, Reverse Drain Current [A]
RDS(ON) [mW],
Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2
8
6
4
2
0
30
3
VDS = 20V
VDS = 50V
VDS = 80V
*Note: ID = 75A
0
30
60
90
120
150
Qg, Total Gate Charge [nC]
180
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FDB047N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250mA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 75A
0.5
0.0
-100
200
Figure 9. Maximum Safe Operating Area
1000
2.5
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
200
10ms
150
ID, Drain Current [A]
ID, Drain Current [A]
100ms
100
1ms
10
1
Operation in This Area
is Limited by R DS(on)
10ms
100ms
DC
*Notes:
o
1. TC = 25 C
100
Limited by package
50
o
2. TJ = 175 C
3. Single Pulse
0.1
0.1
1
10
VDS, Drain-Source Voltage [V]
0
25
100 200
50
75
100
125o
150
TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
Thermal Response [ZqJC]
1
0.5
0.1
0.2
t1
0.01
0.02
t2
*Notes:
0.01
o
1. ZqJC(t) = 0.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZqJC(t)
Single pulse
1E-3
-5
10
FDB047N10 Rev. C0
PDM
0.1
0.05
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
0
10
1
10
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FDB047N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDB047N10 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB047N10 Rev. C0
5
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FDB047N10 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDB047N10 Rev. C0
6
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FDB047N10 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
D2-PAK
Dimensions in Millimeters
FDB047N10 Rev. C0
7
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I55
FDB047N10 Rev. C0
8
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FDB047N10 N-Channel PowerTrench® MOSFET
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