FDB039N06 N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ Features General Description • RDS(on) = 2.95mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • High Power and Current Handling Capability • DC to DC convertors / Synchronous Rectification • RoHS Compliant D D G G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Units V ±20 V -Continuous (TC = 25oC, Silicion Limited) 174* -Continuous (TC = 100oC, Silicion Limited) 123* -Continuous (TC = 25oC, Package Limited) 120 - Pulsed (Note 1) 696 A (Note 2) 872 mJ 7.0 V/ns (Note 3) A (TC = 25oC) 231 W - Derate above 25oC 1.54 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Ratings 60 -55 to +175 o C 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol RθJC RθJA Parameter Ratings Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper) 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper) ©2012 Fairchild Semiconductor Corporation FDB039N06 Rev. C0 Units 0.65 1 62.5 o C/W 40 www.fairchildsemi.com FDB039N06 N-Channel PowerTrench® MOSFET May 2012 Device Marking FDB039N06 Device FDB039N06 Package TO-263 Reel Size Tube Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TC= 25oC 60 - - V ID = 250μA, Referenced to 25oC - 0.04 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V - - 1 VDS = 60V, VGS = 0V, TC = 150oC - - 500 μA IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 2.5 3.5 4.5 V Static Drain to Source On Resistance VGS = 10V, ID = 75A - 2.95 3.9 mΩ gFS Forward Transconductance VDS = 10V, ID = 75A - 169 - S VDS = 25V, VGS = 0V f = 1MHz - 6190 8235 pF - 900 1195 pF - 385 580 pF - 102 133 nC - 32 - nC - 32 - nC - 30 70 ns - 40 90 ns - 55 120 ns - 24 58 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 48V, ID = 75A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 174 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 696 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.3 V trr Reverse Recovery Time - 41 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A dIF/dt = 100A/μs - 47 - nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.31mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics FDB039N06 Rev. C0 2 www.fairchildsemi.com FDB039N06 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V *Notes: 1. VDS = 10V 2. 250μs Pulse Test ID,Drain Current[A] 100 ID,Drain Current[A] Figure 2. Transfer Characteristics 1000 1000 10 100 o 175 C o 25 C 10 1 o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.1 0.01 1 2 6 0.1 1 VDS,Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS,Gate-Source Voltage[V] 1000 IS, Reverse Drain Current [A] 3.2 VGS = 10V 2.8 VGS = 20V o 175 C 100 o 25 C 10 *Notes: 1. VGS = 0V o 2. 250μs Pulse Test *Note: TC = 25 C 2.4 0 60 120 180 240 ID, Drain Current [A] 300 1 0.2 360 Figure 5. Capacitance Characteristics 1.2 10 VGS, Gate-Source Voltage [V] Ciss 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 100 0.1 FDB039N06 Rev. C0 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.6 RDS(ON) [mΩ], Drain-Source On-Resistance 3 VDS = 12V VDS = 30V VDS = 48V 8 6 4 2 *Note: ID = 75A 0 1 10 VDS, Drain-Source Voltage [V] 0 30 3 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 www.fairchildsemi.com FDB039N06 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 1.2 0.8 *Notes: 1. VGS = 10V 2. ID = 75A -25 25 75 125 175 o TJ, Junction Temperature [ C] 225 Figure 10. Maximum Drain Current vs. Case Temperature 200 1000 100μs 160 100 ID, Drain Current [A] ID, Drain Current [A] 1.6 0.4 -75 200 Figure 9. Maximum Safe Operating Area 1ms 10 2.0 10ms 100ms Operation in This Area is Limited by R DS(on) 1s SINGLE PULSE o 1 TC = 25 C 120 Limited by package 80 40 o TJ = 175 C o RθJC = 0.65 C/W 0.1 0.1 1 10 VDS, Drain-Source Voltage [V] 0 25 100 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 t1 0.02 0.01 t2 0.01 *Notes: Single pulse o 1. ZθJC(t) = 0.65 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.001 -5 10 FDB039N06 Rev. C0 PDM 0.05 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FDB039N06 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDB039N06 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB039N06 Rev. C0 5 www.fairchildsemi.com FDB039N06 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDB039N06 Rev. C0 6 www.fairchildsemi.com FDB039N06 N-Channel PowerTrench® MOSFET Mechanical Dimensions D2PAK Dimensions in Millimeters FDB039N06 Rev. C0 7 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDB039N06 Rev. C0 8 www.fairchildsemi.com FDB039N06 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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