UniFET FDH45N50F_F133 TM 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS(on) = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 105 nC) • Low Crss ( typical 62 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D G TO-247 G D S FDH Series S Absolute Maximum Ratings Symbol Parameter FDH45N50F_F133 Unit 500 V 45 28.4 A A 180 A ±30 V VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) 1868 mJ IAR Avalanche Current (Note 1) 45 A EAR Repetitive Avalanche Energy (Note 1) 62.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns PD Power Dissipation 625 5 W W/°C -55 to +150 °C 300 °C (Note 1) (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2008 Fairchild Semiconductor Corporation FDH45N50F_F133 Rev. C 1 Min. Max. Unit -- 0.2 °C/W 0.24 -- °C/W -- 40 °C/W www.fairchildsemi.com FDH45N50F_F133 500V N-Channel MOSFET, FRFET October 2008 Device Marking Device Package Reel Size Tape Width Quantity FDH45N50F_F133 FDH45N50F_F133 TO-247 - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C --- --- 25 250 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 22.5A -- 0.105 0.12 Ω gFS Forward Transconductance VDS = 40V, ID = 22.5A -- 49.0 -- S -- 5100 6630 pF -- 790 1030 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Crss Reverse Transfer Capacitance -- 62 -- pF Coss Output Capacitance VDS = 400V, VGS = 0V, f = 1.0MHz -- 161 -- pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 342 -- pF VDD = 250V, ID = 48A RG = 25Ω -- 140 290 ns -- 500 1010 ns -- 215 440 ns -- 245 500 ns -- 105 137 nC -- 33 -- nC -- 45 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 400V, ID = 48A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 45 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 180 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 45A -- -- 1.4 V trr Reverse Recovery Time 188 -- ns Reverse Recovery Charge VGS = 0V, IS = 45A dIF/dt =100A/μs -- Qrr -- 0.64 -- μC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 45A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 125°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDH45N50F_F133 Rev. C 2 www.fairchildsemi.com FDH45N50F_F133 500V N-Channel MOSFET, FRFET Package Marking and Ordering Information FDH45N50F_F133 500V N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 2 10 ID, Drain Current [A] 2 10 ID, Drain Current [A] Figure 2. Transfer Characteristics 1 10 o 150 C 1 10 o 25 C o -55 C ∝ Notes : 1. VDS = 40V 2. 250レs Pulse Test ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ 0 10 0 -1 0 10 10 1 10 10 2 4 VDS, Drain-Source Voltage [V] 6 8 10 12 VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.30 IDR, Reverse Drain Current [A] RDS(ON) [ヘ ], Drain-Source On-Resistance 2 10 0.25 0.20 VGS = 10V 0.15 0.10 VGS = 20V 0.05 ∝ Note : TJ = 25∩ 0.00 150∩ 1 10 25∩ ∝ Notes : 1. VGS = 0V 2. 250レs Pulse Test 0 0 20 40 60 80 100 120 140 10 160 0.2 0.4 0.6 ID, Drain Current [A] Figure 5. Capacitance Characteristics 12000 8000 1.2 1.4 1.6 1.8 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 1.0 Figure 6. Gate Charge Characteristics VDS = 100V VGS, Gate-Source Voltage [V] Capacitances [pF] 10000 0.8 VSD, Source-Drain voltage [V] Ciss 6000 4000 * Note : 1. VGS = 0 V 2. f = 1 MHz Crss 2000 VDS = 250V 10 VDS = 400V 8 6 4 2 Note : ID = 48A 0 -1 10 0 0 10 1 10 20 40 60 80 100 120 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FDH45N50F_F133 Rev. C 0 3 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 22.5 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 50 10 μs 2 40 100 μs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 100 ms DC 1 10 Operation in This Area is Limited by R DS(on) 0 ∝ Notes : 10 o 1. TC = 25 C 30 20 10 o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 2 10 0 25 3 10 10 50 125 150 Figure 12. Typical Drain-Source Voltage Slope vs. Gate Resistance 45 4,000 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 3,500 3,000 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 40 35 o 4. TJ = 125 C o 4. TJ = 125 C 30 2,500 dv/dt [V/nS] di/dt [A/μS] 100 TC, Case Temperature [ C] Figure 11. Typical Drain Current Slope vs. Gate Resistance di/dt(on) 2,000 1,500 di/dt(off) 1,000 dv/dt(on) 25 20 15 dv/dt(off) 10 500 0 75 o VDS, Drain-Source Voltage [V] 5 0 5 10 15 20 25 30 35 40 45 0 50 RG, Gate resistance [Ω] FDH45N50F_F133 Rev. C 0 5 10 15 20 25 30 35 40 45 50 RG, Gate resistance [Ω] 4 www.fairchildsemi.com FDH45N50F_F133 500V N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 13. Typical Switching Losses vs. Gate Resistance Figure 14. Unclamped Inductive Switching Capability 1,000 100 Notes : 1. If R = 0 Ω tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD) 2. If R ≠ 0 Ω tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1] IAS, Avalanche Current [A] 800 Energy [μJ] Eoff 600 Eon 400 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 200 o o Starting TJ = 150 C 10 Starting TJ = 25 C o 4. TJ = 125 C 0 0 5 10 15 20 25 30 35 40 45 1 0.01 50 0.1 RG, Gate resistance [Ω] 1 10 100 tAV, Time In Avalanche [ms] Figure 15. Transient Thermal Resistance Curve ZθJC(t), Thermal Response 10 -1 D=0.5 0.2 Notes : o 1. Z θ JC (t) = 0.2 C/W Max. 2. Duty Factor, D=t1 /t2 3. T JM - T C = P DM * Z θJC(t) 0.1 0.05 10 -2 0.02 0.01 PDM single pulse 10 t1 t2 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1, Square W ave Pulse Duration [sec] FDH45N50F_F133 Rev. C 5 www.fairchildsemi.com FDH45N50F_F133 500V N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) FDH45N50F_F133 500V N-Channel MOSFET, FRFET Mechanical Dimensions TO-247AB Dimensions in Millimeters FDH45N50F_F133 Rev. 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