® SuperFET II FCH041N60F 600V N-Channel MOSFET, FRFET Features Description • RDS(on)= 36mΩ (Typ) SuperFET®II is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. • Ultra low gate charge (Typ. Qg=277nC) • Low effective output capacitance This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • 100% avalanche tested • RoHS Compliant D G G D S TO-247 MOSFET Maximum Ratings TC = Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage S 25oC unless otherwise noted* Parameter FCH041N60F 600 -DC Units V ±20 -AC (f>1Hz) -Continuous (TC = 25oC) V 30 76 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy (Note 1) 5.95 mJ dv/dt -Continuous (TC = 100oC) - Pulsed (Note 1) 228 A (Note 2) 2025 mJ MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL A 48.1 - Derate above 25oC V/ns 50 595 W 4.76 W/oC -55 to +150 oC 300 oC FCH041N60F Units Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient ©2013 Fairchild Semiconductor Corporation FCH041N60F Rev. C3 0.21 40 1 o C/W www.fairchildsemi.com FCH041N60F 600V N-Channel MOSFET, FRFET March 2013 Device Marking FCH041N60F Device FCH041N60F Package TO-247 Reel Size - Tape Width - Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 10mA, VGS = 0V, TJ = 25oC ID = 10mA, VGS = 0V, TJ = 150oC ID = 10mA, Referenced to 25oC VDS = 480V, VGS = 0V 600 - - V 650 - - V - 0.67 - V/oC - - 1 VDS = 480V, TC = 125oC - - 10 VGS = ±20V, VDS = 0V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 3 - 5 V Static Drain to Source On Resistance - 36 41 mΩ gFS Forward Transconductance VGS = 10V, ID = 38A VDS = 20V, ID = 38A - 64.5 - S - 10800 14365 pF - 324 430 pF pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 4.5 - Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1.0MHz - 185 - pF Coss eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 748 - pF Qg(tot) Total Gate Charge at 10V - 277 360 nC Qgs Gate to Source Gate Charge - 65.3 - nC Qgd Gate to Drain “Miller” Charge VDS = 380V, ID = 38A VGS = 10V - 116 - nC ESR Equivalent Series Resistance f=1MHz - 1 - Ω - 63 136 ns VDD = 380V, ID = 38A RGEN = 4.7Ω - 66 142 ns - 244 498 ns - 53 116 ns VDS = 100V, VGS = 0V f = 1MHz (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 77 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 231 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 38A - - 1.2 V trr Reverse Recovery Time - 190 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 38A dIF/dt = 100A/μs - 1490 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 15A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 38A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCH041N60F Rev. C3 2 www.fairchildsemi.com FCH041N60F 600V N-Channel MOSFET, FRFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 250 1000 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 10 ID, Drain Current[A] ID, Drain Current[A] 100 *Notes: 1. VDS = 20V 2. 250μs Pulse Test 100 1 10 o 25 C o o 150 C -55 C 1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.1 0.05 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 2 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS, Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 250 60 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 100 55 50 45 VGS = 10V 40 VGS = 20V 35 o 150 C 10 o 25 C 1 *Notes: 1. VGS = 0V 2. 250μs Pulse Test o *Note: TC = 25 C 30 0 50 100 150 ID, Drain Current [A] 200 0.1 0.1 250 Figure 5. Capacitance Characteristics 10 10 10 3 10 2 Coss VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss 4 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss 10 10 1.6 Figure 6. Gate Charge Characteristics 5 10 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1 *Note: 1. VGS = 0V 2. f = 1MHz 0 0 FCH041N60F Rev. C3 100 200 300 400 500 VDS, Drain-Source Voltage [V] VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 38A 0 600 0 3 50 100 150 200 250 Qg, Total Gate Charge [nC] 300 www.fairchildsemi.com FCH041N60F 600V N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 38A 0.5 -80 160 Figure 9. Maximum Safe Operating Area vs. Case Temperature -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Maximum Drain Current 80 500 100 10μs ID, Drain Current [A] ID, Drain Current [A] 2.0 100μs 1ms 10ms DC 10 Operation in This Area is Limited by R DS(on) 1 *Notes: o 60 VGS = 10V 40 20 1. TC = 25 C o 0.1 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] o RθJC = 0.21 C/W 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 45 EOSS, [μJ] 36 27 18 9 0 0 FCH041N60F Rev. C3 100 200 300 400 500 VDS, Drain to Source Voltage [V] 600 4 www.fairchildsemi.com FCH041N60F 600V N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) FCH041N60F 600V N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 0.3 0.1 0.5 t1 0.1 0.05 t2 *Notes: 0.02 o 1. ZθJC(t) = 0.21 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.01 -5 10 FCH041N60F Rev. C3 PDM 0.2 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 0 10 www.fairchildsemi.com FCH041N60F 600V N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCH041N60F Rev. C3 6 www.fairchildsemi.com FCH041N60F 600V N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FCH041N60F Rev. C3 7 www.fairchildsemi.com FCH041N60F 600V N-Channel MOSFET, FRFET Mechanical Dimensions TO-247 FCH041N60F Rev. C3 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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