PROCESS CP734V Small Signal Transistors PNP - Chopper Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 31.5 x 31.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.7 x 6.7 MILS Emitter Bonding Pad Area 4.7 x 8.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 11,210 PRINCIPAL DEVICE TYPES CMPT404A MPS404A 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (5- January 2006)