PROCESS CP592V Small Signal Transistors PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.6 X 3.6 MILS Emitter Bonding Pad Area 3.6 X 3.6 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIER PER 4 INCH WAFER 47,150 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CXT3906 CZT3906 R0 (13- February 2006) PROCESS CP592V Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13- February 2006)