Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3002NT1 Broadband High Linearity Amplifier The MMG3002NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. 40 - 3600 MHz, 20 dB 21 dBm InGaP HBT Features • Frequency: 40 - 3600 MHz • P1dB: 21 dBm @ 900 MHz • Small - Signal Gain: 20 dB @ 900 MHz • Third Order Output Intercept Point: 37.5 dBm @ 900 MHz • Single Voltage Supply • Internally Matched to 50 Ohms • Low Cost SOT - 89 Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. Table 1. Typical Performance (1) 12 3 CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC Table 2. Maximum Ratings Characteristic Symbol 900 MHz 2140 MHz 3500 MHz Unit Small - Signal Gain (S21) Gp 20 18 14.5 dB Input Return Loss (S11) IRL - 16 - 26 - 16 dB Output Return Loss (S22) ORL - 12 -8 - 11 dB Power Output @ 1dB Compression P1db 21 21 18.5 dBm Third Order Output Intercept Point IP3 37.5 36 32 dBm Rating Symbol Value Unit Supply Voltage VCC 7 V Supply Current ICC 400 mA RF Input Power Pin 12 dBm Tstg - 65 to +150 °C TJ 150 °C Storage Temperature Range Junction Temperature (2) 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC = 5.2 Vdc, TC = 25°C, 50 ohm system Table 3. Thermal Characteristics (VCC = 5.2 Vdc, ICC = 110 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol Value (3) Unit RθJC 46.5 °C/W NOT RECOMMENDED FOR NEW DESIGN Document Number: MMG3002NT1 Rev. 9, 3/2008 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2004-2008. All rights reserved. RF Device Data Freescale Semiconductor MMG3002NT1 1 Characteristic NOT RECOMMENDED FOR NEW DESIGN Symbol Min Typ Max Unit Small - Signal Gain (S21) Gp 19.3 20 — dB Input Return Loss (S11) IRL — - 16 — dB Output Return Loss (S22) ORL — - 12 — dB Power Output @ 1dB Compression P1dB — 21 — dBm Third Order Output Intercept Point IP3 — 37.5 — dBm Noise Figure NF — 4.2 — dB Supply Current (1) ICC 95 110 125 mA Supply Voltage (1) VCC — 5.2 — V 1. For reliable operation, the junction temperature should not exceed 150°C. NOT RECOMMENDED FOR NEW DESIGN Table 4. Electrical Characteristics (VCC = 5.2 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) MMG3002NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description 2 Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 1 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Class Human Body Model (per JESD 22 - A114) 1B (Minimum) Machine Model (per EIA/JESD 22 - A115) A (Minimum) Charge Device Model (per JESD 22 - C101) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Pin Number MMG3002NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS S22 −10 25°C 20 - 40°C 15 S11 VCC = 5.2 Vdc ICC = 110 mA −30 VCC = 5.2 Vdc 0 1 2 3 −40 0 4 1 2 3 4 f, FREQUENCY (GHz) f, FREQUENCY (GHz) Figure 2. Small - Signal Gain (S21) versus Frequency Figure 3. Input/Output Return Loss versus Frequency 23 P1dB, 1 dB COMPRESSION POINT (dBm) 24 900 MHz 19 2140 MHz 17 15 2600 MHz 3500 MHz, C5 = 0.1 pF 13 11 VCC = 5.2 Vdc ICC = 110 mA 9 10 12 14 16 18 20 22 21 20 19 VCC = 5.2 Vdc ICC = 110 mA 18 17 0.5 1 1.5 2 2.5 3 Pout, OUTPUT POWER (dBm) f, FREQUENCY (GHz) Figure 4. Small - Signal Gain versus Output Power Figure 5. P1dB versus Frequency 160 140 120 100 80 60 40 20 0 4.6 23 22 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 21 Gp, SMALL−SIGNAL GAIN (dB) −20 3.5 42 39 36 33 VCC = 5.2 Vdc ICC = 110 mA 100 kHz Tone Spacing 30 27 0 1 2 3 VCC, COLLECTOR VOLTAGE (V) f, FREQUENCY (GHz) Figure 6. Collector Current versus Collector Voltage Figure 7. Third Order Output Intercept Point versus Frequency NOT RECOMMENDED FOR NEW DESIGN TC = 85°C S11, S22 (dB) Gp, SMALL−SIGNAL GAIN (dB) 0 10 ICC, COLLECTOR CURRENT (mA) NOT RECOMMENDED FOR NEW DESIGN 25 4 MMG3002NT1 4 RF Device Data Freescale Semiconductor 39 36 33 30 f = 900 MHz 100 kHz Tone Spacing 27 5.1 5 5.2 5.3 5.4 VCC, COLLECTOR VOLTAGE (V) 41 40 39 38 37 36 35 −40 −20 0 20 40 60 80 100 T, TEMPERATURE (_C) Figure 9. Third Order Output Intercept Point versus Case Temperature 105 −30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) VCC = 5.2 Vdc, f = 900 MHz 100 kHz Tone Spacing 8 Vdc Supply with 25 W Dropping Resistor MTTF (YEARS) −40 −50 −60 104 103 VCC = 5.2 Vdc ICC = 110 mA f = 900 MHz 100 kHz Tone Spacing −70 102 −80 5 7 9 11 13 15 17 19 120 21 125 Pout, OUTPUT POWER (dBm) 6 4 2 VCC = 5.2 Vdc ICC = 110 mA 0 1 1.5 2 2.5 3 140 145 150 3.5 Figure 11. MTTF versus Junction Temperature ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 8 0.5 135 NOTE: The MTTF is calculated with VCC = 5.2 Vdc, ICC = 110 mA Figure 10. Third Order Intermodulation versus Output Power 0 130 TJ, JUNCTION TEMPERATURE (°C) 4 −20 −30 −40 −50 VCC = 5.2 Vdc, ICC = 110 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) −60 NOT RECOMMENDED FOR NEW DESIGN IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 42 Figure 8. Third Order Output Intercept Point versus Collector Voltage NF, NOISE FIGURE (dB) NOT RECOMMENDED FOR NEW DESIGN 50 OHM TYPICAL CHARACTERISTICS −70 9 11 13 15 17 f, FREQUENCY (GHz) Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power 19 MMG3002NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 40- 800 MHz VSUPPLY C3 C4 L1 RF INPUT Z1 DUT Z2 C1 Z1, Z5 Z2 Z3 Z3 Z4 RF OUTPUT Z5 VCC C2 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip Z4 PCB 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 30 S21 20 R1 S21, S11, S22 (dB) 10 C4 C3 0 L1 −10 −20 C2 C1 S22 S11 VCC = 5.2 Vdc ICC = 110 mA −30 MMG30XX Rev 2 −40 0 200 400 600 800 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 0.01 μF Chip Capacitors C0603C103J5RAC Kemet C3 0.1 μF Chip Capacitor C0603C104J5RAC Kemet C4 1 μF Chip Capacitor C0603C105J5RAC Kemet L1 470 nH Chip Inductor BK2125HM471 - T Taiyo Yuden R1 7.5 W Chip Resistor RK73B2ATTE7R5J KOA Speer Table 9. Supply Voltage versus R1 Values Supply Voltage 6 7 8 9 10 11 12 V R1 Value 7.3 16 25 35 44 53 62 Ω Note: To provide VCC = 5.2 Vdc and ICC = 110 mA at the device. NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN R1 MMG3002NT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 800 - 3400 MHz VSUPPLY C4 L1 RF INPUT Z1 DUT Z2 C1 Z1, Z5 Z2 Z3 Z3 Z4 Z5 VCC 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip RF OUTPUT C2 Z4 PCB 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 30 S21 20 R1 10 C4 C3 L1 0 C2 C1 S22 −10 −20 S11 −30 800 1200 1600 2000 VCC = 5.2 Vdc ICC = 110 mA 2400 2800 3200 MMG30XX Rev 2 3600 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 10. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 150 pF Chip Capacitors C0603C151J5RAC Kemet C3 0.1 μF Chip Capacitor C0603C104J5RAC Kemet C4 1 μF Chip Capacitor C0603C105J5RAC Kemet L1 56 nH Chip Inductor HK160856NJ - T Taiyo Yuden R1 7.5 W Chip Resistor RK73B2ATTE7R5J KOA Speer NOT RECOMMENDED FOR NEW DESIGN C3 S21, S11, S22 (dB) NOT RECOMMENDED FOR NEW DESIGN R1 MMG3002NT1 RF Device Data Freescale Semiconductor 7 50 OHM APPLICATION CIRCUIT: 3400 - 3600 MHz VSUPPLY C4 L1 RF INPUT Z1 DUT Z2 C1 Z1, Z6 Z2 Z3 Z3 Z4 Z5 C5 VCC 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.086″ x 0.058″ Microstrip Z4 Z5 PCB RF OUTPUT Z6 C2 0.085″ x 0.058″ Microstrip 0.404″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 20. 50 Ohm Test Circuit Schematic 20 S21 10 R1 VCC = 5.2 Vdc ICC = 110 mA C4 C3 0 L1 S22 C2 C1 −10 C5 S11 −20 −30 3200 MMG30XX Rev 2 3300 3400 3500 3600 3700 3800 f, FREQUENCY (MHz) Figure 21. S21, S11 and S22 versus Frequency Figure 22. 50 Ohm Test Circuit Component Layout Table 11. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 150 pF Chip Capacitors C0603C151J5RAC Kemet C3 0.1 μF Chip Capacitor C0603C104J5RAC Kemet C4 1 μF Chip Capacitor C0603C105J5RAC Kemet C5 (1) 0.1 pF Chip Capacitor 06035J0R1BS AVX L1 39 nH Chip Inductor HK160839NJ - T Taiyo Yuden R1 7.5 W Chip Resistor RK73B2ATTE7R5J KOA Speer 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. NOT RECOMMENDED FOR NEW DESIGN C3 S21, S11, S22 (dB) NOT RECOMMENDED FOR NEW DESIGN R1 MMG3002NT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 100 0.05966 176.181 10.25158 174.805 0.07235 - 0.722 0.04946 - 167.612 150 0.07228 - 178.627 9.96687 171.111 0.07071 - 1.821 0.0953 - 129.396 200 0.09041 151.476 10.46556 167.719 0.07464 - 3.053 0.05913 - 124.668 250 0.0909 149.96 10.36837 164.949 0.07424 - 3.553 0.08015 - 125.378 300 0.08882 145.472 10.30366 162.017 0.07406 - 4.277 0.09694 - 122.814 350 0.08508 140.833 10.2505 158.995 0.07407 - 4.934 0.11062 - 121.876 400 0.08377 136.078 10.17971 156.158 0.07405 - 5.7 0.12723 - 122.007 450 0.08191 131.492 10.10383 153.293 0.07365 - 6.307 0.14156 - 122.555 500 0.07982 125.857 10.02536 150.437 0.07358 - 7.037 0.15558 - 123.436 550 0.07776 120.816 9.94165 147.642 0.07346 - 7.676 0.1685 - 124.8 600 0.0773 115.435 9.85596 144.898 0.07336 - 8.2 0.18177 - 126.796 650 0.07677 110.371 9.76098 142.109 0.07321 - 8.911 0.19472 - 128.506 700 0.07664 104.874 9.6623 139.374 0.07301 - 9.464 0.20662 - 130.47 750 0.07628 100.112 9.56168 136.692 0.0729 - 10.069 0.21833 - 132.663 800 0.07619 95.73 9.45426 134.024 0.07275 - 10.618 0.22977 - 134.835 850 0.07601 91.72 9.34921 131.391 0.07273 - 11.184 0.24125 - 137.084 900 0.07567 87.313 9.23967 128.792 0.07257 - 11.821 0.25232 - 139.685 950 0.07642 83.036 9.13144 126.149 0.07238 - 12.312 0.26303 - 142.257 1000 0.07619 80.021 9.01205 123.659 0.07228 - 12.88 0.27394 - 144.736 1050 0.07666 76.201 8.90327 121.137 0.07218 - 13.474 0.28332 - 147.346 1100 0.07678 73.008 8.78013 118.657 0.07202 - 13.93 0.29417 - 150.042 1150 0.07673 70.68 8.66342 116.191 0.0719 - 14.519 0.30394 - 152.767 1200 0.07674 68.773 8.53991 113.779 0.07178 - 15.062 0.31393 - 155.358 1250 0.07628 66.216 8.42251 111.392 0.07176 - 15.551 0.32286 - 157.992 1300 0.07618 64.635 8.30514 109.034 0.07164 - 16.115 0.33259 - 160.483 1350 0.07454 62.959 8.18109 106.673 0.07149 - 16.539 0.34127 - 162.981 1400 0.07373 60.65 8.06498 104.367 0.07152 - 17.114 0.34972 - 165.377 1450 0.0724 59.062 7.94403 102.073 0.07137 - 17.565 0.35931 - 167.823 1500 0.06466 48.656 7.85198 99.72 0.0715 - 18.187 0.35762 - 170.82 1550 0.0646 44.563 7.73641 97.503 0.07167 - 18.755 0.36484 - 172.845 1600 0.06495 39.856 7.63068 95.372 0.07161 - 19.217 0.37158 - 174.751 1650 0.0657 35.953 7.52257 93.247 0.07165 - 19.614 0.37821 - 176.697 1700 0.06599 31.949 7.43591 91.089 0.07171 - 20.239 0.38558 - 178.85 1750 0.0666 28.693 7.31976 88.981 0.07168 - 20.731 0.39036 179.588 1800 0.06649 25.448 7.22121 86.872 0.07176 - 21.241 0.39732 177.775 1850 0.06637 22.687 7.11782 84.83 0.07181 - 21.685 0.40211 175.992 1900 0.06563 19.369 7.01794 82.771 0.07188 - 22.233 0.40749 174.294 1950 0.06514 15.516 6.91688 80.824 0.07197 - 22.678 0.41306 172.684 2000 0.0641 13.294 6.82126 78.739 0.07217 - 23.218 0.41825 170.97 2050 0.06323 9.843 6.72865 76.797 0.07214 - 23.632 0.42367 169.372 2100 0.06288 6.976 6.63794 74.849 0.07234 - 24.15 0.42905 167.644 2150 0.06195 4.218 6.55483 72.888 0.07244 - 24.689 0.43442 166.014 2200 0.06084 2.075 6.46275 70.939 0.07265 - 25.273 0.43857 164.274 2250 0.05942 - 0.3 6.37821 69.013 0.07275 - 25.755 0.44419 162.598 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Table 12. Common Emitter S - Parameters (VCC = 5.2 Vdc, ICC = 110 mA, TC = 25°C, 50 Ohm System) (continued) MMG3002NT1 RF Device Data Freescale Semiconductor 9 50 OHM TYPICAL CHARACTERISTICS S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2300 0.05808 - 2.187 6.29055 67.098 0.07295 - 26.316 0.44756 160.879 2350 0.05526 - 4.038 6.20851 65.179 0.07318 - 26.813 0.45231 159.11 2400 0.05338 - 6.096 6.12256 63.315 0.07337 - 27.387 0.45571 157.425 2450 0.05054 - 7.643 6.04461 61.45 0.07359 - 27.903 0.46063 155.679 2500 0.04768 - 10.036 5.96594 59.564 0.07386 - 28.462 0.46419 153.884 2550 0.04494 - 12.811 5.88833 57.733 0.07416 - 29.19 0.4681 152.005 2600 0.04239 - 14.731 5.81782 55.868 0.07435 - 29.754 0.47249 150.142 2650 0.0393 - 16.676 5.74121 53.98 0.07445 - 30.312 0.47601 148.126 2700 0.03707 - 20.889 5.66538 52.04 0.0748 - 31.053 0.47991 146.214 2750 0.0346 - 21.7 5.59155 50.247 0.07499 - 31.654 0.48371 144.147 2800 0.03163 - 24.056 5.51967 48.401 0.07519 - 32.344 0.48777 142.183 2850 0.02869 - 26.756 5.44631 46.54 0.0754 - 33.048 0.49144 140.072 2900 0.02667 - 28.324 5.37422 44.74 0.07563 - 33.749 0.4961 138.081 2950 0.02324 - 29.457 5.30336 42.914 0.07577 - 34.431 0.50017 136.001 3000 0.02069 - 34.403 5.23613 41.138 0.07596 - 35.209 0.5054 133.872 3050 0.01861 - 37.625 5.16698 39.322 0.07624 - 35.917 0.50901 131.91 3100 0.01563 - 41.101 5.09908 37.495 0.07648 - 36.648 0.51431 129.855 3150 0.01407 - 49.967 5.03148 35.696 0.0766 - 37.389 0.51844 127.844 3200 0.01296 - 54.052 4.96452 33.935 0.07684 - 38.12 0.52333 125.818 3250 0.01129 - 59.44 4.89769 32.159 0.07708 - 38.894 0.52814 123.86 3300 0.01031 - 67.904 4.83271 30.407 0.07721 - 39.663 0.53368 121.891 3350 0.00977 - 71.657 4.76883 28.702 0.07742 - 40.479 0.53765 120.096 3400 0.00821 - 77.779 4.707 26.984 0.07764 - 41.116 0.54299 118.206 3450 0.0076 - 90.054 4.64886 25.288 0.07774 - 41.964 0.54702 116.357 3500 0.0074 - 97.151 4.59041 23.575 0.07797 - 42.707 0.55121 114.75 3550 0.00666 - 114.876 4.5319 21.885 0.07819 - 43.538 0.55593 113.11 3600 0.00749 - 127.171 4.47455 20.231 0.07843 - 44.293 0.55935 111.522 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Table 12. Common Emitter S - Parameters (VCC = 5.2 Vdc, ICC = 110 mA, TC = 25°C, 50 Ohm System) (continued) MMG3002NT1 10 RF Device Data Freescale Semiconductor 1.7 0.305 diameter 2.49 3.48 5.33 1.27 1.27 0.58 0.86 0.64 3.86 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 23. Recommended Mounting Configuration 2.54 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN 7.62 MMG3002NT1 RF Device Data Freescale Semiconductor 11 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PACKAGE DIMENSIONS MMG3002NT1 12 RF Device Data Freescale Semiconductor MMG3002NT1 RF Device Data Freescale Semiconductor 13 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN MMG3002NT1 14 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 7 Mar. 2007 • Corrected and updated Part Numbers in Tables 8, 10 and 11, Component Designations and Values, to RoHS compliant part numbers, p. 6 - 8 8 July 2007 • Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 12 - 14. Case updated to add missing dimension for Pin 1 and Pin 3. 9 Mar. 2008 • Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 • Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5 • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, p. 9, 10 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing MMG3002NT1 RF Device Data Freescale Semiconductor 15 Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004-2008. All rights reserved. NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN How to Reach Us: MMG3002NT1 Document Number: MMG3002NT1 Rev. 9, 3/2008 16 RF Device Data Freescale Semiconductor