FREESCALE MMG3015NT1

Freescale Semiconductor
Technical Data
Document Number: MMG3015NT1
Rev. 1, 4/2008
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG3015NT1
Broadband High Linearity Amplifier
The MMG3015NT1 is a General Purpose Amplifier that is internally
Input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 0 to 6000 MHz such as Cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF.
0 - 6000 MHz, 15.5 dB
20.5 dBm
InGaP HBT
Features
• Frequency: 0 - 6000 MHz
• P1dB: 20.5 dBm @ 900 MHz
• Small Signal Gain: 15.5 dB @ 900 MHz
• Third Order Output Intercept Point: 36 dBm @ 900 MHz
• Single 5 Volt Supply
• Active Bias
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
Table 1. Typical Performance (1)
3
CASE 1514 - 02, STYLE 1
SOT - 89
PLASTIC
Table 2. Maximum Ratings
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small - Signal Gain
(S21)
Gp
15.5
14.5
12.5
dB
Input Return Loss
(S11)
IRL
- 15
- 19
- 19
dB
Output Return Loss
(S22)
ORL
- 13
-9
-7
dB
Power Output @1dB
Compression
P1db
20.5
20.5
18.5
dBm
IP3
36
33.5
30.5
dBm
Third Order Output
Intercept Point
12
Rating
Symbol
Value
Unit
Supply Voltage
VCC
7
V
Supply Current
ICC
300
mA
RF Input Power
Pin
12
dBm
Storage Temperature Range
Tstg
- 65 to +150
°C
Junction Temperature (2)
TJ
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. VCC = 5 Vdc, TC = 25°C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 95 mA, TC = 25°C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value (3)
Unit
RθJC
41.5
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3015NT1
1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small - Signal Gain (S21)
Characteristic
Gp
14
15.5
—
dB
Input Return Loss (S11)
IRL
—
- 15
—
dB
Output Return Loss (S22)
ORL
—
- 13
—
dB
Power Output @ 1dB Compression
P1dB
—
20.5
—
dBm
Third Order Output Intercept Point
IP3
—
36
—
dBm
Noise Figure
NF
—
5.6
—
dB
Supply Current (1)
ICC
80
95
120
mA
Supply Voltage (1)
VCC
—
5
—
V
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3015NT1
2
RF Device Data
Freescale Semiconductor
Table 5. Functional Pin Description
Pin
Number
2
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD 22 - A115)
A (Minimum)
Charge Device Model (per JESD 22 - C101)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
1
260
°C
MMG3015NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
TC = 85°C
25°C
16
−5
S22
−40°C
14
S11, S22 (dB)
Gp, SMALL−SIGNAL GAIN (dB)
18
12
−10
S11
−15
−20
10
VCC = 5 Vdc
ICC = 95 mA
VCC = 5 Vdc
8
−25
0
1
2
3
4
5
0
6
4
3
5
6
Figure 2. Small - Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Loss versus Frequency
22
P1dB, 1 dB COMPRESSION POINT (dBm)
900 MHz
15
2140 MHz
1960 MHz
14
2600 MHz
13
3500 MHz
12
11
VCC = 5 Vdc
ICC = 95 mA
10
10
21
20
19
18
17
16
VCC = 5 Vdc
ICC = 95 mA
15
14
12
14
16
18
20
0.5
22
1
1.5
2
2.5
3
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
Figure 4. Small - Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
Gp, SMALL−SIGNAL GAIN (dB)
2
f, FREQUENCY (GHz)
16
ICC, COLLECTOR CURRENT (mA)
1
f, FREQUENCY (GHz)
3.5
38
36
34
32
30
VCC = 5 Vdc
ICC = 95 mA
1 MHz Tone Spacing
28
26
0
1
2
3
VCC, COLLECTOR VOLTAGE (V)
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
4
MMG3015NT1
4
RF Device Data
Freescale Semiconductor
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS
38
37
36
35
34
f = 900 MHz
1 MHz Tone Spacing
33
4.8
4.9
5
5.1
5.2
VCC, COLLECTOR VOLTAGE (V)
38
37
36
35
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
34
33
−40
−20
40
60
80
100
Figure 9. Third Order Output Intercept Point
versus Case Temperature
105
−20
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
20
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
MTTF (YEARS)
−30
−40
−50
−60
103
5
10
15
120
20
125
130
135
140
145
150
Pout, OUTPUT POWER (dBm)
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Third Order Intermodulation versus
Output Power
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 95 mA
6
4
2
VCC = 5 Vdc
ICC = 95 mA
0
1
2
3
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
8
0
104
VCC = 5 Vdc
ICC = 95 mA
f = 900 MHz
1 MHz Tone Spacing
−70
NF, NOISE FIGURE (dB)
0
4
−20
VCC = 5 Vdc, ICC = 95 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 8.5 dB @
0.01% Probability (CCDF)
−30
−40
−50
−60
−70
2
4
6
8
10
12
14
16
18
f, FREQUENCY (GHz)
Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent
Channel Power Ratio versus Output Power
20
MMG3015NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40- 800 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
DUT
Z2
C1
Z1, Z5
Z2
Z3
Z3
Z4
VCC
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
RF
OUTPUT
Z5
C2
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
20
S21
S21, S11, S22 (dB)
10
R1
0
C4
C3
−10
L1
S11
C2
C1
−20
S22
−30
VCC = 5 Vdc
ICC = 95 mA
MMG30XX
Rev 2
−40
200
0
400
600
800
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
0.01 μF Chip Capacitors
C0603C103J5RAC
Kemet
C3
0.1 μF Chip Capacitor
C0603C104J5RAC
Kemet
C4
1 μF Chip Capacitor
C0603C105J5RAC
Kemet
L1
470 nH Chip Inductor
BK2125HM471 - T
Taiyo Yuden
R1
0 W, 1/10 W Chip Resistor
CRCW06030000FKEA
Vishay
MMG3015NT1
6
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 800 - 3600 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
DUT
Z2
C1
Z1, Z5
Z2
Z3
Z3
Z4
Z5
VCC
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
RF
OUTPUT
C2
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
30
S21, S11, S22 (dB)
20
R1
S21
10
C4
C3
L1
0
C2
C1
S22
−10
S11
−20
−30
800
VCC = 5 Vdc
ICC = 95 mA
1200
1600
2000
2400
2800
3200
MMG30XX
Rev 2
3600
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
150 pF Chip Capacitors
C0603C151J5RAC
Kemet
C3
0.1 μF Chip Capacitor
C0603C104J5RAC
Kemet
C4
1 μF Chip Capacitor
C0603C105J5RAC
Kemet
L1
56 nH Chip Inductor
HK160856NJ - T
Taiyo Yuden
R1
0 W, 1/10 W Chip Resistor
CRCW06030000FKEA
Vishay
MMG3015NT1
RF Device Data
Freescale Semiconductor
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 95 mA, TC = 25°C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
200
0.28
174.23
6.17
171.48
0.08
- 2.66
0.06
- 43.26
250
0.28
172.92
6.16
169.36
0.08
- 3.32
0.07
- 50.81
300
0.27
171.92
6.15
167.25
0.08
- 3.93
0.08
- 56.75
350
0.27
170.57
6.14
165.15
0.08
- 4.60
0.09
- 62.45
400
0.27
169.49
6.12
163.07
0.08
- 5.22
0.09
- 67.13
450
0.26
168.53
6.11
160.97
0.08
- 5.85
0.10
- 71.09
500
0.26
167.16
6.10
158.87
0.08
- 6.50
0.11
- 74.88
550
0.26
165.92
6.08
156.78
0.08
- 7.14
0.12
- 77.99
600
0.26
164.77
6.06
154.73
0.08
- 7.76
0.13
- 81.75
650
0.26
163.38
6.05
152.65
0.08
- 8.41
0.14
- 85.06
700
0.25
162.57
6.03
150.58
0.08
- 9.03
0.14
- 88.16
750
0.25
161.36
6.01
148.53
0.08
- 9.64
0.15
- 91.28
800
0.25
160.35
5.99
146.50
0.08
- 10.26
0.16
- 93.96
850
0.25
159.29
5.97
144.45
0.08
- 10.88
0.17
- 96.90
900
0.25
158.03
5.95
142.41
0.08
- 11.52
0.18
- 99.99
950
0.24
157.14
5.93
140.38
0.08
- 12.14
0.18
- 102.70
1000
0.24
156.02
5.91
138.38
0.08
- 12.78
0.19
- 105.47
1050
0.24
154.89
5.88
136.37
0.08
- 13.38
0.20
- 108.27
1150
0.24
153.09
5.83
132.34
0.08
- 14.64
0.21
- 114.23
1200
0.24
152.30
5.80
130.37
0.08
- 15.28
0.22
- 117.17
1250
0.24
151.41
5.77
128.39
0.08
- 15.94
0.22
- 120.26
1300
0.24
150.63
5.75
126.41
0.08
- 16.57
0.23
- 123.42
1350
0.24
150.09
5.72
124.46
0.08
- 17.17
0.24
- 126.34
1400
0.24
149.52
5.69
122.50
0.08
- 17.81
0.24
- 129.61
1450
0.24
149.15
5.67
120.54
0.08
- 18.46
0.25
- 132.32
1500
0.23
148.71
5.65
118.61
0.08
- 19.07
0.26
- 134.63
1550
0.23
147.76
5.62
116.65
0.08
- 19.73
0.26
- 136.77
1600
0.23
146.51
5.60
114.72
0.08
- 20.39
0.27
- 138.90
1650
0.23
145.11
5.57
112.79
0.08
- 21.04
0.28
- 141.13
1900
0.23
138.41
5.41
103.23
0.08
- 24.38
0.31
- 152.46
2150
0.24
132.77
5.23
93.77
0.08
- 27.79
0.35
- 163.83
2400
0.25
128.41
5.05
84.48
0.08
- 31.33
0.38
- 175.54
2650
0.26
124.16
4.87
75.21
0.08
- 35.09
0.40
172.45
2900
0.28
119.27
4.69
66.04
0.08
- 39.03
0.43
161.50
2950
0.28
118.39
4.65
64.24
0.08
- 39.86
0.44
159.35
3000
0.28
117.49
4.62
62.43
0.09
- 40.65
0.44
157.23
3050
0.28
116.75
4.59
60.59
0.09
- 41.48
0.45
154.83
3100
0.29
116.03
4.55
58.77
0.09
- 42.33
0.46
152.37
3150
0.29
115.21
4.52
56.97
0.09
- 43.16
0.46
150.02
3200
0.29
114.41
4.48
55.15
0.09
- 44.01
0.47
147.68
3250
0.29
113.69
4.44
53.36
0.09
- 44.83
0.48
145.58
3300
0.29
112.97
4.41
51.59
0.09
- 45.67
0.48
143.48
3350
0.29
112.24
4.37
49.84
0.09
- 46.48
0.49
141.43
(continued)
MMG3015NT1
8
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 95 mA, TC = 25°C, 50 Ohm System) (continued)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
3400
0.29
111.50
4.34
48.07
0.09
- 47.31
0.49
139.46
3450
0.29
110.37
4.30
45.96
0.09
- 48.32
0.50
137.08
3500
0.29
109.50
4.27
44.53
0.09
- 49.01
0.50
135.57
3550
0.29
108.57
4.23
42.83
0.09
- 49.82
0.51
133.81
3600
0.29
107.57
4.20
41.14
0.09
- 50.64
0.52
132.08
MMG3015NT1
RF Device Data
Freescale Semiconductor
9
1.7
7.62
0.305 diameter
2.49
3.48
5.33
2.54
1.27
1.27
0.58
0.86
0.64
3.86
Recommended Solder Stencil
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3015NT1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MMG3015NT1
RF Device Data
Freescale Semiconductor
11
MMG3015NT1
12
RF Device Data
Freescale Semiconductor
MMG3015NT1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2007
• Initial Release of Data Sheet
1
Apr. 2008
• Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
•
Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis
(ACPR) unit of measure to dBc, p. 5
• Updated Part Numbers in Tables 8, 9, Component Designations and Values, to latest RoHS compliant
part numbers, p. 6, 7
MMG3015NT1
14
RF Device Data
Freescale Semiconductor
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MMG3015NT1
Document
Number:
RF
Device
Data MMG3015NT1
Rev. 1, 4/2008
Freescale
Semiconductor
15