Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMG3015NT1
Rev. 4, 9/2014
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG3015NT1
Broadband High Linearity Amplifier
The MMG3015NT1 is a general purpose amplifier that is internally input
and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 0 to 6000 MHz such as cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.
0--6000 MHz, 15.5 dB
20.5 dBm
InGaP HBT GPA
Features
 Frequency: 0--6000 MHz
 P1dB: 20.5 dBm @ 900 MHz
 Small--Signal Gain: 15.5 dB @ 900 MHz
 Third Order Output Intercept Point: 36 dBm @ 900 MHz
 Single 5 V Supply
 Active Bias Control
 Internally Matched to 50 Ohms
 Cost--effective SOT--89 Surface Mount Plastic Package
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Table 1. Typical Performance (1)
SOT--89
Table 2. Maximum Ratings
Rating
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small--Signal Gain
(S21)
Gp
15.5
14.5
12.5
dB
Input Return Loss
(S11)
IRL
--15
--19
--19
dB
Output Return Loss
(S22)
ORL
--13
--9
--7
dB
Power Output @1dB
Compression
P1dB
20.5
20.5
18.5
dBm
Third Order Output
Intercept Point
OIP3
36
33.5
30.5
dBm
Symbol
Value
Unit
Supply Voltage
VCC
7
V
Supply Current
ICC
300
mA
RF Input Power
Pin
12
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
175
C
1. VCC = 5 Vdc, TA = 25C, 50 ohm system.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 95C, 5 Vdc, 95 mA, no RF applied
Symbol
Value (2)
Unit
RJC
41.5
C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2007--2008, 2012, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMG3015NT1
1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
14
15.5
—
dB
Input Return Loss (S11)
IRL
—
--15
—
dB
Output Return Loss (S22)
ORL
—
--13
—
dB
Power Output @ 1dB Compression
P1dB
—
20.5
—
dBm
Third Order Output Intercept Point
OIP3
—
36
—
dBm
Characteristic
Noise Figure
NF
—
5.6
—
dB
Supply Current
ICC
80
95
120
mA
Supply Voltage
VCC
—
5
—
V
Table 5. Functional Pin Description
2
Pin
Number
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22--A114)
1C
Machine Model (per EIA/JESD 22--A115)
A
Charge Device Model (per JESD 22--C101)
IV
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
C
MMG3015NT1
2
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
0
TC = 85C
16
25C
--5
S22
--40C
14
S11, S22 (dB)
Gp, SMALL--SIGNAL GAIN (dB)
18
12
--10
S11
--15
--20
10
VCC = 5 Vdc
VCC = 5 Vdc
--25
8
2
3
4
5
2140 MHz
2600 MHz
3500 MHz
12
11
VCC = 5 Vdc
6
5
12
21
20
19
18
17
16
15
VCC = 5 Vdc
14
14
16
18
20
0.5
22
1
1.5
2
2.5
3
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
Figure 4. Small--Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
160
ICC, COLLECTOR CURRENT (mA)
4
22
1960 MHz
140
120
100
80
60
40
20
0
3
Figure 3. Input/Output Loss versus Frequency
13
0
2
Figure 2. Small--Signal Gain (S21) versus
Frequency
15
10
10
1
f, FREQUENCY (GHz)
900 MHz
14
0
6
f, FREQUENCY (GHz)
P1dB, 1 dB COMPRESSION POINT (dBm)
Gp, SMALL--SIGNAL GAIN (dB)
16
1
1
2
3
4
5
VCC, COLLECTOR VOLTAGE (V)
Figure 6. Collector Current versus Collector
Voltage
6
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
0
3.5
38
36
34
32
30
28
VCC = 5 Vdc
1 MHz Tone Spacing
26
0
1
2
3
4
f, FREQUENCY (GHz)
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
3
38
37
36
35
34
f = 900 MHz
1 MHz Tone Spacing
33
4.8
4.9
5
5.1
5.2
VCC, COLLECTOR VOLTAGE (V)
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS
38
37
36
35
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
34
33
--40
--20
20
40
60
80
100
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
105
--20
MTTF (YEARS)
--30
--40
--50
--70
103
5
10
120
20
15
125
130
135
140
145
150
Pout, OUTPUT POWER (dBm)
TJ, JUNCTION TEMPERATURE (C)
Figure 10. Third Order Intermodulation Distortion
versus Output Power
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 95 mA
8
NF, NOISE FIGURE (dB)
104
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
--60
6
4
2
VCC = 5 Vdc
0
1
0
2
3
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
0
4
--20
VCC = 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 8.5 dB @
0.01% Probability (CCDF)
--30
--40
--50
--60
--70
2
4
6
8
10
12
14
16
18
f, FREQUENCY (GHz)
Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
20
MMG3015NT1
4
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 40--800 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
DUT
Z2
C1
Z1, Z5
Z2
Z3
Z3
Z4
Z5
C2
VCC
0.347 x 0.058 Microstrip
0.575 x 0.058 Microstrip
0.172 x 0.058 Microstrip
RF
OUTPUT
Z4
PCB
0.403 x 0.058 Microstrip
Getek Grade ML200C, 0.031, r = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
20
S21
S21, S11, S22 (dB)
10
R1
0
--10
L1
S11
C4
C3
C2
C1
--20
S22
--30
MMG30XX
Rev 2
VCC = 5 Vdc
--40
0
200
400
600
800
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
0.01 F Chip Capacitors
C0603C103J5RAC
Kemet
C3
0.1 F Chip Capacitor
C0603C104J5RAC
Kemet
C4
1 F Chip Capacitor
C0603C105J5RAC
Kemet
L1
470 nH Chip Inductor
BK2125HM471--T
Taiyo Yuden
R1
0 Ω, 1/10 W Chip Resistor
CRCW06030000FKEA
Vishay
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
5
50 OHM APPLICATION CIRCUIT: 800--3600 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
DUT
Z2
C1
Z1, Z5
Z2
Z3
Z3
Z4
Z5
C2
VCC
0.347 x 0.058 Microstrip
0.575 x 0.058 Microstrip
0.172 x 0.058 Microstrip
RF
OUTPUT
Z4
PCB
0.403 x 0.058 Microstrip
Getek Grade ML200C, 0.031, r = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
30
S21, S11, S22 (dB)
20
R1
S21
10
L1
0
C2
C1
S22
--10
C4
C3
S11
--20
--30
800
MMG30XX
Rev 2
VCC = 5 Vdc
1200
1600
2000
2400
2800
3200
3600
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
150 pF Chip Capacitors
C0603C151J5RAC
Kemet
C3
0.1 F Chip Capacitor
C0603C104J5RAC
Kemet
C4
1 F Chip Capacitor
C0603C105J5RAC
Kemet
L1
56 nH Chip Inductor
HK160856NJ--T
Taiyo Yuden
R1
0 Ω, 1/10 W Chip Resistor
CRCW06030000FKEA
Vishay
MMG3015NT1
6
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S--Parameters (VCC = 5 Vdc, TA = 25C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|

|S21|

|S12|

|S22|

200
0.28
174.23
6.17
171.48
0.08
--2.66
0.06
--43.26
250
0.28
172.92
6.16
169.36
0.08
--3.32
0.07
--50.81
300
0.27
171.92
6.15
167.25
0.08
--3.93
0.08
--56.75
350
0.27
170.57
6.14
165.15
0.08
--4.60
0.09
--62.45
400
0.27
169.49
6.12
163.07
0.08
--5.22
0.09
--67.13
450
0.26
168.53
6.11
160.97
0.08
--5.85
0.10
--71.09
500
0.26
167.16
6.10
158.87
0.08
--6.50
0.11
--74.88
550
0.26
165.92
6.08
156.78
0.08
--7.14
0.12
--77.99
600
0.26
164.77
6.06
154.73
0.08
--7.76
0.13
--81.75
650
0.26
163.38
6.05
152.65
0.08
--8.41
0.14
--85.06
700
0.25
162.57
6.03
150.58
0.08
--9.03
0.14
--88.16
750
0.25
161.36
6.01
148.53
0.08
--9.64
0.15
--91.28
800
0.25
160.35
5.99
146.50
0.08
--10.26
0.16
--93.96
850
0.25
159.29
5.97
144.45
0.08
--10.88
0.17
--96.90
900
0.25
158.03
5.95
142.41
0.08
--11.52
0.18
--99.99
950
0.24
157.14
5.93
140.38
0.08
--12.14
0.18
--102.70
1000
0.24
156.02
5.91
138.38
0.08
--12.78
0.19
--105.47
1050
0.24
154.89
5.88
136.37
0.08
--13.38
0.20
--108.27
--114.23
1150
0.24
153.09
5.83
132.34
0.08
--14.64
0.21
1200
0.24
152.30
5.80
130.37
0.08
--15.28
0.22
--117.17
1250
0.24
151.41
5.77
128.39
0.08
--15.94
0.22
--120.26
1300
0.24
150.63
5.75
126.41
0.08
--16.57
0.23
--123.42
1350
0.24
150.09
5.72
124.46
0.08
--17.17
0.24
--126.34
1400
0.24
149.52
5.69
122.50
0.08
--17.81
0.24
--129.61
1450
0.24
149.15
5.67
120.54
0.08
--18.46
0.25
--132.32
1500
0.23
148.71
5.65
118.61
0.08
--19.07
0.26
--134.63
1550
0.23
147.76
5.62
116.65
0.08
--19.73
0.26
--136.77
1600
0.23
146.51
5.60
114.72
0.08
--20.39
0.27
--138.90
1650
0.23
145.11
5.57
112.79
0.08
--21.04
0.28
--141.13
1900
0.23
138.41
5.41
103.23
0.08
--24.38
0.31
--152.46
2150
0.24
132.77
5.23
93.77
0.08
--27.79
0.35
--163.83
2400
0.25
128.41
5.05
84.48
0.08
--31.33
0.38
--175.54
2650
0.26
124.16
4.87
75.21
0.08
--35.09
0.40
172.45
2900
0.28
119.27
4.69
66.04
0.08
--39.03
0.43
161.50
2950
0.28
118.39
4.65
64.24
0.08
--39.86
0.44
159.35
3000
0.28
117.49
4.62
62.43
0.09
--40.65
0.44
157.23
3050
0.28
116.75
4.59
60.59
0.09
--41.48
0.45
154.83
3100
0.29
116.03
4.55
58.77
0.09
--42.33
0.46
152.37
3150
0.29
115.21
4.52
56.97
0.09
--43.16
0.46
150.02
3200
0.29
114.41
4.48
55.15
0.09
--44.01
0.47
147.68
3250
0.29
113.69
4.44
53.36
0.09
--44.83
0.48
145.58
3300
0.29
112.97
4.41
51.59
0.09
--45.67
0.48
143.48
3350
0.29
112.24
4.37
49.84
0.09
--46.48
0.49
141.43
(continued)
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S--Parameters (VCC = 5 Vdc, TA = 25C, 50 Ohm System) (continued)
S11
f
MHz
|S11|
3400
3450
S21
S12
S22

|S21|

|S12|

|S22|

0.29
111.50
4.34
48.07
0.09
--47.31
0.49
139.46
0.29
110.37
4.30
45.96
0.09
--48.32
0.50
137.08
3500
0.29
109.50
4.27
44.53
0.09
--49.01
0.50
135.57
3550
0.29
108.57
4.23
42.83
0.09
--49.82
0.51
133.81
3600
0.29
107.57
4.20
41.14
0.09
--50.64
0.52
132.08
MMG3015NT1
8
RF Device Data
Freescale Semiconductor, Inc.
1.90
3.00
2X
45
4.35
2X
1.25
3X
0.70
0.85
2X
1.50
Figure 20. PCB Pad Layout for SOT--89A
M3015N
YYWW
Figure 21. Product Marking
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MMG3015NT1
10
RF Device Data
Freescale Semiconductor, Inc.
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
11
MMG3015NT1
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3100: General Purpose Amplifier and MMIC Biasing
Software
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2007
 Initial Release of Data Sheet
1
Apr. 2008
 Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
 Corrected Fig. 13, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis
(ACPR) unit of measure to dBc, p. 5
 Updated Part Numbers in Tables 8, 9, Component Designations and Values, to latest RoHS compliant
part numbers, pp. 6, 7
2
Feb. 2012
 Corrected temperature at which ThetaJC is measured from 25C to 95C and added “no RF applied” to
Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no
RF signal applied, p. 1
 Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 3
 Removed ICC bias callout from applicable graphs and Table 10, Common Emitter S--Parameters heading
as bias is not a controlled value, pp. 4--9
 Added .s2p File availability to Product Software and Printed Circuit Boards to Development Tools, p. 14
3
Sept. 2012
 Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case 1514--02
(SOT--89) with Case 2142--01 (SOT--89) as a result of the device transfer from a Freescale wafer fab to an
external GaAs wafer fab and new assembly site. The new assembly and test site’s SOT--89 package has
slight dimensional differences, pp. 1, 10--13. Refer to PCN13337, GaAs Fab Transfer.
 Added Fig. 21, Product Marking, p. 10
4
Sept. 2014
 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
 Added Failure Analysis information, p. 13
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
13
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E 2007–2008, 2012, 2014 Freescale Semiconductor, Inc.
MMG3015NT1
Document Number: MMG3015NT1
Rev. 4, 9/2014
14
RF Device Data
Freescale Semiconductor, Inc.