Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical Two - Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture Output Power — 130 Watts PEP Power Gain — 17.3 dB Efficiency — 41% IMD — - 32.5 dBc • Capable of Handling 10:1 VSWR @ 32 Vdc, 857 MHz, 130 Watts CW Output Power Features • Integrated ESD Protection • Excellent Thermal Stability • Characterized with Differential Large - Signal Impedance Parameters • RoHS Compliant 470- 860 MHz, 130 W, 32 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 375F - 04, STYLE 1 NI - 650 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +70 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 302 1.72 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.58 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Class 1 (Minimum) M2 (Minimum) MRF374A 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 70 — — Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 V, ID = 200 μA) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (2) (VDS = 32 V, ID = 100 mA) VGS(Q) 2.5 3.3 4.5 Vdc Drain - Source On - Voltage (1) (VGS = 10 V, ID = 3 A) VDS(on) — 0.41 0.45 Vdc Input Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Ciss — 97.3 — pF Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Coss — 49 — pF Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Crss — 1.91 — pF Off Characteristics (1) Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID =10 μA) On Characteristics Dynamic Characteristics (1) Functional Characteristics, Narrowband Operation (2) (In Freescale MRF374A Narrowband Circuit, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) Gps 16 17.3 — dB Drain Efficiency (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) η 36 41.2 — % Intermodulation Distortion (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) IMD — - 32.5 - 28 dB 1. Each side of device measured separately. 2. Measurement made with device in push - pull configuration. MRF374A 2 RF Device Data Freescale Semiconductor MRF374 Rev 3a VGS VDD C7A R3A L3A C13A L2A R2 R4A L4 C14A L1A C9A C12A RF OUTPUT C2 RF INPUT R1A C4A C5 C3 C6 C4B C1 R1B C10 C9B R4B L3B C12B L1B C14B L2B C7B R3B VGS C11 C13B VDD Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 1. MRF374A Narrowband Test Circuit Component Layout MRF374A RF Device Data Freescale Semiconductor 3 Table 5. MRF374A Narrowband Test Circuit Component Layout Designations and Values Designation Description C1 0.8 pF Chip Capacitor, ATC C2 2.2 pF Chip Capacitor, ATC C3 0.5 - 5.0 pF Variable Capacitor, Johanson Gigatrim C4A, B, C12A, B 47 pF Chip Capacitors, ATC C5 1.0 pF Chip Capacitor, ATC C6 10 pF Chip Capacitor, ATC C7A, B, C14A, B 100,000 pF Chip Capacitors, ATC C9A, B 15 pF Chip Capacitors, ATC C10 3.9 pF Chip Capacitor, ATC C11 5.1 pF Chip Capacitor, ATC C13A, B 2.2 mF, 100 V Chip Capacitors, Vishay #VJ3640Y225KXBAT L1A, B 5.0 nH, Coilcraft #A02T L2A, B 8.0 nH, Coilcraft #A03T L3A, B 130.0 nH, Coilcraft #132 - 11SMJ L4 8.8 nH, Coilcraft #1606 - 8 R1A, B 51 W, 1/4 W Chip Resistors, Vishay Dale (1210) R2 10 W, 1/2 W Chip Resistor, Vishay Dale (2010) R3A, B 3.3 kW, 1/8 W Chip Resistors, Vishay Dale (1206) R4A, B 180 W, 1/4 W Chip Resistors, Vishay Dale (1210) PCB MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, εr = 3.48 Balun B1A, B Vertical 860 MHz Narrowband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 MRF374A 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 18 VDD = 32 Vdc 28 Vdc 16.5 16 Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz 15.5 15 400 500 600 700 800 900 −25 VDD = 28 Vdc −30 −35 −40 32 Vdc −45 −50 400 500 600 f, FREQUENCY (MHz) Figure 2. Gain versus Frequency in Broadband Circuit 20 G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) 35 VDD = 28 Vdc 30 32 Vdc 25 20 400 500 40 600 700 800 15 35 VDD = 32 Vdc Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz 10 η D 25 IRL 0 400 900 500 f, FREQUENCY (MHz) Ciss 10 Coss 5 Crss 0 20 30 40 50 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance versus Voltage 0 60 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 15 C rss , Capacitance (pF) 150 10 700 800 20 900 Figure 5. Performance in Broadband Circuit 20 50 600 f, FREQUENCY (MHz) 200 100 30 5 Figure 4. Drain Efficiency versus Frequency in Broadband Circuit 0 900 Gps Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz 40 η, DRAIN EFFICIENCY (%) 800 Figure 3. Intermodulation Distortion versus Frequency in Broadband Circuit 45 C oss , C iss , Capacitance (pF) 700 f, FREQUENCY (MHz) 40 −20 VDD = 32 Vdc IDQ = 1.1 A f = 860 MHz 2 K Mode COFDM 64 QAM 10.5 Peak/Avg. Ratio 35 30 25 −25 −30 −35 20 −40 Gps IMR 15 IMR, INTERMODULATION (dBc) 17 Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz −20 η , DRAIN EFFICIENCY (%) D G ps , POWER GAIN (dB) 17.5 −15 −45 10 −50 η 5 −55 0 0.1 1 10 −60 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. COFDM Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit MRF374A RF Device Data Freescale Semiconductor 5 −20 19 35 −25 18 30 −30 25 −35 20 Gps −40 15 IMR −45 10 −50 5 VDD = 32 Vdc IDQ = 1.1 A f = 860 MHz η 0 0.1 1 −55 G ps , POWER GAIN (dB) 40 IMR, INTERMODULATION (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS 800 mA 17 600 mA 16 400 mA 15 200 mA VDD = 32 Vdc f = 857 MHz nFrequency = 6 MHz 14 13 −60 100 10 IDQ = 1.0 A 1 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. 8 - VSB Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit 100 Figure 9. Power Gain versus Peak Output Power in Narrowband Circuit −20 50 IDQ = 200 mA −25 −30 400 mA −35 600 mA −40 −45 800 mA 1.0 A −50 −55 VDD = 32 Vdc f = 857 MHz nFrequency = 6 MHz 10 1 100 Pout, OUTPUT POWER (WATTS) PEP Figure 10. Intermodulation Distortion versus Peak Output Power in Narrowband Circuit η , DRAIN EFFICIENCY (%) D IMD, INTERMODULATION DISTORTION (dBc) 10 Pout, OUTPUT POWER (WATTS) PEP 40 30 20 VDD = 32 Vdc IDQ = 800 mA f = 857 MHz nFrequency = 6 MHz 10 0 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 11. Drain Efficiency versus Peak Output Power in Narrowband Circuit MRF374A 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS VDD = 28 Vdc VDD = 32 Vdc 18 18 VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 17.5 470 MHz 17 560 MHz 16.5 760 MHz 16 660 MHz 860 MHz 15.5 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 17.5 470 MHz 17 560 MHz 16.5 760 MHz 660 MHz 860 MHz 16 15.5 15 15 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 Figure 12. Power Gain versus Peak Output Power in Broadband Circuit 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 13. Power Gain versus Peak Output Power in Broadband Circuit 45 VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 560 MHz 660 MHz 470 MHz 25 15 VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 40 η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 35 860 MHz 860 MHz 30 560 MHz 660 MHz 470 MHz 20 10 5 0 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 IMD, INTERMODULATION DISTORTION (dBc) Figure 14. Drain Efficiency versus Peak Output Power in Broadband Circuit −25 VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz −30 660 MHz 860 MHz 560 MHz −35 760 MHz −40 470 MHz −45 −50 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 15. Drain Efficiency versus Peak Output Power in Broadband Circuit IMD, INTERMODULATION DISTORTION (dBc) 1 −25 VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz −30 660 MHz 560 MHz 860 MHz −35 −40 760 MHz −45 470 MHz −50 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 16. Intermodulation Distortion versus Peak Output Power in Broadband Circuit 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 17. Intermodulation Distortion versus Peak Output Power in Broadband Circuit MRF374A RF Device Data Freescale Semiconductor 7 Zo = 4 Ω f = 845 MHz f = 845 MHz Zload Zsource f = 875 MHz f = 875 MHz VDD = 32 V, IDQ = 400 mA, Pout = 130 W PEP f MHz Zsource Ω Zload Ω 845 3.33 - j2.42 4.56 - j2.86 860 3.03 - j2.39 4.22 - j3.16 875 2.73 - j3.10 3.87 - j3.52 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 18. Series Equivalent Source and Load Impedance MRF374A 8 RF Device Data Freescale Semiconductor NOTES MRF374A RF Device Data Freescale Semiconductor 9 NOTES MRF374A 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS bbb M T A M G B M D Q bbb 2X bbb M T A M B L M S (INSULATOR) M T A B K 1 2 3 4 M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. (FLANGE) 4 PL B R (LID) ccc M T A M B M N (LID) ccc M T A M B M M (INSULATOR) bbb M T A M B M F C E 5 H A A (FLANGE) T SEATING PLANE CASE 375F - 04 ISSUE E NI - 650 DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX 1.135 1.145 0.225 0.235 0.135 0.178 0.210 0.220 0.055 0.065 0.004 0.006 0.900 BSC 0.077 0.087 0.220 0.250 0.260 BSC 0.643 0.657 0.638 0.650 .125 .135 0.227 0.233 0.225 0.235 0.010 BSC 0.015 BSC STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 28.80 29.10 5.72 5.97 3.43 4.52 5.33 5.59 1.40 1.65 0.11 0.15 22.86 BSC 1.96 2.21 5.59 6.35 6.60 BSC 16.33 16.69 16.20 16.50 3.175 3.43 5.77 5.92 5.715 5.97 0.254 BSC 0.381 BSC DRAIN DRAIN GATE GATE SOURCE MRF374A RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF374A Document Number: MRF374A Rev. 5, 5/2006 12 RF Device Data Freescale Semiconductor