INFINEON BGA615L7

D a t a S he et , R e v . 1 . 3 , F e b . 2 00 7
B G A 6 15 L7
Silicon Germanium GPS Low Noise Amplifier
S m a l l S i g n a l D i s c r et e s
Edition 2007-02-12
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
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disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
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BGA615L7
BGA615L7
Revision History: 2007-02-12, Rev.1.3
Previous Version: BGA615L7 V1.2
Page
Subjects (major changes since last revision)
4
Added moisture sensitivity level
5
Added thermal resistance
6
Adjusted power gain settling times
Adjusted inband and out of band compression points
12
Updated recommended land pattern (added solder mask defined layout)
13
Added reel diameter and pcs / reel information
Data Sheet
3
Rev.1.3, 2007-02-12
BGA615L7
Silicon Germanium GPS Low Noise Amplifier
1
Silicon Germanium GPS Low Noise Amplifier
Features
• High gain: 18 dB
• Low Noise Figure: 0.9 dB
• Power off function
• Operating frequency 1575 MHz
• Supply voltage: 2.4 V to 3.2 V
• Tiny TSLP-7-1 leadless package
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ω
• Low external component count
• 1 kV HBM ESD protection (including AI-pin)
• Moisture sensitivity level: MSL 1
6
5
4
7
1
2
3
TSLP-7-1
Application
• 1575 MHz GPS
VCC PON
BIAS
BIAS
AI
AO
ESD
VSS
GND
Figure 1
Blockdiagram
2
Description
The BGA615L7 is a front-end low noise amplifier for Global Positioning System (GPS) applications. The LNA
provides 18 dB gain, 0.9 dB noise figure and high linearity performance, allowing it to be used as a first-stage LNA.
Current consumption is as low as 5.6 mA. The BGA615L7 is based upon Infineon Technologies‘ B7HF Silicon
Germanium technology. It operates over a 2.4 V to 3.2 V supply range.
Type
Package
Marking
Chip
BGA615L7
TSLP-7-1
BS
T0595
Data Sheet
4
Rev.1.3, 2007-02-12
BGA615L7
Description
Pin Definition and Function
Table 1
Pin Definition and Function
Pin No.
Symbol
Function
1
AI
LNA input
2
BIAS
DC bias
3
GND
RF ground
4
PON
Power on control
5
VCC
Supply control
6
AO
LNA output
7
VSS
DC ground
Maximum Ratings
Table 2
Maximum Ratings
1)
Parameter
Symbol
Value
Unit
Voltage at pin VCC
VCC
VAI
VBIAS
VAO
VPON
VSS
ICC
PIN
Ptot
TJ
TA
TSTG
VESD
-0.3 ... 3.6
V
-0.3 ... 0.9
V
-0.3 ... 0.9
V
-0.3 ... VCC+ 0.3
V
-0.3 ... VCC+ 0.3
V
-0.3 ... 0.3
V
10
mA
10
dBm
Voltage at pin AI
Voltage at pin BIAS
Voltage at pin AO
Voltage at pin PON
Voltage at pin VSS
Current into pin VCC
RF input power
Total power dissipation
Junction temperature
Ambient temperature range
Storage temperature range
ESD capability all pins (HBM: JESD22A-114)
36
mW
150
°C
-30 ... 85
°C
-65 ... 150
°C
1000
V
1) All voltages refer to GND-Node.
Thermal resistance
Table 3
Parameter
Thermal resistance
Value
Unit
RthJS
240
Junction - soldering point1)
1) For calculation of RthJA please refer to Application Note Thermal Resistance
K/W
Data Sheet
Symbol
5
Rev.1.3, 2007-02-12
BGA615L7
Electrical Characteristics
3
Electrical Characteristics
Table 4
Electrical Characteristics1): TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1575 MHz
Parameter
Symbol
Supply voltage
VCC
ICC
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
2.4
2.8
3.2
V
-
5.6
-
mA
ON-mode
-
0.2
3
µA
OFF-mode
1.5
-
3.2
V
ON-mode
0
-
0.5
V
OFF-mode
-
1.5
3
µA
ON-mode
-
0
1
µA
OFF-mode
-
18
-
dB
High-gain Mode
-
0.9
-
dB
ZS = 50 Ω
-
13
-
dB
-
>15
-
dB
-
35
-
dB
-
20
-
µs
OFF- to ON-mode
-
50
-
µs
ON- to OFF-mode
Inband input 3rd order intercept IIP3
point
-
-1
-
dBm
f1 = 1575 MHz
f2 = f1 +/-1 MHz
Inband input 1 dB compression IP1dB
point
-
-14
-
dBm
Supply current
Gain switch control voltage
Gain switch control current
Vpon
Ipon
2
Insertion power gain
|S21|
Noise figure2)
NF
RLin
RLout
1/|S12|2
tS
Input return loss
Output return loss
Reverse isolation
3)
Power gain settling time
Out of band input 1 dB
compression point
IP1dB,900M
-
-9
-
dBm
f = 806 MHz ... 928 MHz
Out of band input 1 dB
compression point
IP1dB,1650M
-
-12
-
dBm
f = 1612 MHz ... 1710
MHz
Out of band input 1 dB
compression point
IP1dB,1900M
-
-6
-
dBm
f = 1710 MHz ...1785
MHz
f =1850 MHz ...1909
MHz
Stability
k
-
> 1.5
-
f = 20 MHz ... 10 GHz
1) Measured on BGA615L7 application board including PCB losses (unless noted otherwise)
2) PCB losses subtracted
3) To within 1 dB of the final gain OFF- to ON-mode; to within 3 dB of the final gain ON- to OFF-mode
Data Sheet
6
Rev.1.3, 2007-02-12
BGA615L7
Measured Parameters
4
Measured Parameters
Typical Measurement Results ON Mode; TA = 25 °C
Noise Figure1) NF = f( f )
VCC = 2.8 V
20
1.5
19
1.4
18
1.3
17
1.2
16
NF [dB]
|S21|2 [dB]
Gain |S21|2 = f( f )
VCC = 2.8 V
−30°C
15
14
25°C
13
85°C
1.1
1
0.9
0.8
12
0.7
11
0.6
10
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
0.5
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
2
Frequency [GHz]
Reverse Isolation 1/|S12|2 = f( f )
VCC = 2.8 V
Matching |S11|, |S22| = f( f )
VCC = 2.8 V
−30
0
−32
−5
−34
|S |, |S | [dB]
−36
22
−38
−40
11
1/|S12|2 [dB]
S22
−10
−42
−44
S11
−15
−20
−25
−30
−46
−35
−48
−40
−50
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
2
Frequency [GHz]
−45
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
2
Frequency [GHz]
2
Frequency [GHz]
1) PCB losses subtraced
Data Sheet
7
Rev.1.3, 2007-02-12
BGA615L7
Measured Parameters
Typical Measurement Results ON Mode vs. Temperature
Noise Figure1) NF = f(TA)
VCC = 2.8 V
20
1.5
19.5
1.4
19
1.3
18.5
1.2
18
1.1
NF [dB]
|S21|2 [dB]
Power Gain |S21|2 = f(TA)
VCC = 2.8 V
17.5
1
17
0.9
16.5
0.8
16
0.7
15.5
0.6
15
−40
−20
0
20
40
60
80
0.5
−40
100
−20
0
20
40
60
80
100
TA [°C]
T [°C]
A
Supply current ICC = f(TA)
VCC = 2.8 V
Third Order Input Intercept Point IIP3 = f(TA)
VCC = 2.8 V
5
6.5
6.3
2.5
6.1
0
IIP3 [dBm]
ICC [mA]
5.9
5.7
5.5
5.3
−2.5
−5
5.1
4.9
−7.5
4.7
4.5
−40
−20
0
20
40
60
80
−10
−40
100
−20
0
20
40
60
80
100
T [°C]
T [°C]
A
A
1) PCB losses subtracted
Data Sheet
8
Rev.1.3, 2007-02-12
BGA615L7
Measured Parameters
Typical Measurement Results ON Mode vs. Supply Voltage
Noise Figure1) NF = f(VCC)
TA = 25 °C
20
1.5
19.5
1.4
19
1.3
18.5
1.2
18
1.1
NF [dB]
|S21|2 [dB]
Power Gain |S21| = f(VCC)
TA = 25 °C
17.5
17
1
0.9
16.5
0.8
16
0.7
15.5
0.6
15
2.2
2.4
2.6
2.8
V
CC
3
3.2
0.5
2.2
3.4
2.4
2.6
[V]
2.8
V
CC
Supply current ICC = f(VCC)
TA = 25 °C
3
3.2
3.4
[V]
Third Order Input Intercept Point IIP3 = f(VCC)
TA = 25 °C
6.5
5
6.3
2.5
6.1
0
IIP3 [dBm]
ICC [mA]
5.9
5.7
5.5
5.3
−2.5
−5
5.1
4.9
−7.5
4.7
4.5
2.2
2.4
2.6
2.8
V
CC
3
3.2
−10
2.2
3.4
[V]
2.4
2.6
2.8
V
CC
3
3.2
3.4
[V]
1) PCB losses subtracted
Data Sheet
9
Rev.1.3, 2007-02-12
BGA615L7
Application Information
5
Application Information
PCB Configuration
C2
RFin
N1
BGA615L7
AI, 1
AO, 6
RFout
L2
VCC, 5
BIAS, 2
VCC
C4
GND, 3
L1
PON, 4
C5
PON
VSS, 7
C3
C1
Figure 2
Schematic of BGA615L7
Table 5
Bill of Materials
Name
Value
Package
Manufacturer
Function
C1
10 nF
0402
Various
LF trap
C2
5 pF
0402
Various
DC block
C3
10 pF
0402
Various
Control voltage filtering
optional
C4
100 pF
0402
Various
Supply filtering optional
C5
2.2 nF
0402
Various
Supply filtering
L1
3.3 nH
0402
Various
LF trap & input matching
L2
100 nH
0402
Various
Biasing
N1
BGA615L7
PG-TSLP-7-1
Infineon
SiGe LNA
Data Sheet
10
Rev.1.3, 2007-02-12
BGA615L7
Application Information
Application Board
Figure 3
Photograph of Application Board
Figure 4
Top View of Application Board
Figure 5
Detailed View of Application Board
Please note that RF-ground is connected via pin 3 only. In order to achieve the same performance as given in this
data sheet, it is necessary to provide good RF-grounding on this pin. Furthermore, the LF trap consisting of
inductor L1 and capacitor C1 should be placed as close as possible to pin 3.
Data Sheet
11
Rev.1.3, 2007-02-12
BGA615L7
Application Information
Copper
Prepreg FR4
0.100 mm
0.035 mm
Prepreg FR4
Copper
0.460 mm
FR4
0.100 mm
Prepreg FR4
0.100 mm
0.017 mm
Prepreg FR4
Copper
Cross-Section View of Application Board
SMD
1.4
0.25
Solder mask
0.2
0.2
R0.1
Recommended Land Pattern
Table 6
Application Notes
0.3
0.3
Stencil apertures
Figure 7
0.25
1.9
0.3
Copper
Solder mask
0.2
0.2
0.2
0.25
0.3
Copper
0.2
0.25
1.9
1.9
0.2
0.25
0.2
0.2
0.3
0.2
0.2
1.9
0.3
1.4
0.25
0.2
1.4
0.2
NSMD
1.4
0.2
Figure 6
0.017 mm
0.100 mm
0.25
0.25
R0.1
Stencil apertures
No.
Description
AN091
The BGA615L7 Silicon-Germanium Low Noise Amplifier in GPS Applications
AN093
The BGA615L7 Silicon-Germanium Low Noise Amplifier with 0201 chip components
AN094
The BGA615L7 Silicon-Germanium Low Noise Amplifier for Low-Current GPS Applications
A list of all application notes is available at http://goto.infineon.com/smallsignaldiscretes-appnotes.
Data Sheet
12
Rev.1.3, 2007-02-12
BGA615L7
Package Information
Package Information
Top view
Bottom view
0.4 +0.1
1.3 ±0.05
0.05 MAX.
1 ±0.05
4
1.7 ±0.05
7
2
1.2 ±0.035 1)
7
3
3
Pin 1 marking
2 ±0.05
5
4
1
6
6 x 0.2 ±0.035 1)
6
5
1.1 ±0.035 1)
6
2
1
6 x 0.2 ±0.035 1)
1) Dimension applies to plated terminal
Figure 8
Package Dimensions
0.5
8
2.18
4
Pin 1
marking
1.45
Reel diameter = 180 mm
7500 pcs / reel
Figure 9
Tape & Reel Dimensions
BS
BGA615
Type code
0525
2005, CW 25
Date code (YYWW)
Pin 1 marking
Laser marking
Figure 10
Data Sheet
Marking Layout
13
Rev.1.3, 2007-02-12