IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK1152S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switching regulator and DC-DC converter 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65-0.1 No secondary breakdown +0.28 1.50-0.1 +0.2 9.70-0.2 Low drive current +0.15 0.50-0.15 High speed switching 1 Gate 2 Drain +0.15 4.60-0.15 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 500 V Gate to source voltage VGSS 30 V Drain current (DC) ID 1.5 A Drain current(pulse) * ID 6 A Power dissipation PD 20 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s, duty cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain to source breakdown voltage VDSS ID=10mA,VGS=0 Gate to source breakdown voltage VGSS ID= Drain cut-off current IDSS VDS=400V,VGS=0 IGSS VGS= Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance 100 A,VDS=0 VDS=20V,ID=1A RDS(on) VGS=10V,ID=1A Input capacitance Ciss Output capacitance Coss Typ VDS=10V,VGS=0,f=1MHZ Max Unit V V 30 100 25V,VDS=0 VGS(off) VDS=10V,ID=1mA Yfs Min 500 10 2.0 0.6 3.0 1.1 4.0 A A V s 6.0 160 pF 45 pF Reverse transfer capacitance Crss 5 pF Turn-on delay time td(on) 5 ns 10 ns td(off) 20 ns tf 10 ns Rise time Turn-off delay time Fall time tr ID=1A,VGS(on)=0,RL=30 www.kexin.com.cn 1