IC MOSFET SMD Type Silicon N-Channel Power F-MOSFET 2SK3024 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 High electrostatic breakdown voltage +0.28 1.50-0.1 +0.2 9.70-0.2 Low-voltage drive +0.15 0.50-0.15 No secondary breakdown 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 60 Gate to source voltage VGSS 20 V ID 20 A 40 A Drain current Idp * Power dissipation TC=25 PD 20 V W 1 TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain to source breakdown voltage VDSS ID=1mA,VGS=0 Drain cut-off current IDSS VDS=50V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 Gate threshold voltage Vth VDS=10V,ID=1mA 1 Forward transfer admittance Yfs VDS=10V,ID=10A 8 Drain to source on-state resistance Input capacitance RDS(on) Typ Max 60 Unit V 10 A 10 2.5 12 A V S VGS=10V,ID=10A 33 50 m VGS=4V,ID=10A 44 70 m Ciss 330 VDS=10V,VGS=0,f=1MHZ pF Output capacitance Coss 290 pF Reverse transfer capacitance Crss 70 pF Turn-on delay time ton 20 ns Rise time tr Turn-off delay time toff Fall time tf ID=10A,VGS(on)=10V,RL=3 ,VDD=30V 125 ns 1480 ns 520 ns www.kexin.com.cn 1