IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK1880S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.15 0.50-0.15 +0.2 9.70-0.2 Suitable for Switching regulator 3.80 No secondary breakdown 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID 1.5 A Power dissipation PD 20 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain source breakdown voltage VDSS ID=10mA,VGS=0 Gate to source breadown voltage VGSS ID= 100 Drain cut-off current IDSS VDS=500V,VGS=0 Gate leakage current IGSS VGS= 25V,VDS=0 Yfs VDS=20V,ID=1A Forward transfer admittance Drain to source on-state resistance Input capacitance A,VDS=0 RDS(on) VGS=10V,ID=1A Ciss Min Typ 600 V 30 0.85 Unit V 100 A 10 A 1.4 6.5 250 VDS=10V,VGS=0,f=1MHZ Max S 8.0 pF Output capacitance Coss 55 pF Reverse transfer capacitance Crss 8 pF Turn-on delay time td(on) 10 ns Rise time Turn-off delay time Fall time tr td(off) tf ID=1A,VGS(on)=10V,RL=30 25 ns 35 ns 30 ns www.kexin.com.cn 1