MITSUBISHI INTELLIGENT POWER MODULES PM200RSA060 FLAT-BASE TYPE INSULATED PACKAGE A B H AA - DIA. (4 TYP.) W W Y Z 12 3 4 5678 9 11 13 15 17 19 N Q 1. V UPC 2. UFO 3. U P 4. V UPI 5. V VPC 6. VFO 7. V P 8. V VPI 9. V WPC 10. WFO V P T Y R Y AC W AC 10 12 14 16 18 AE (15 TYP.) J E C F B Q AB - THD (6 TYP.) 11. W P 12. V WPI 13. V NC 14. V NI 15. NC 16. U N 17. V N 18. W N 19. FO W W V U AH AH G M M Z S D Z Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Y Z 2.54 MM DIA. (2 TYP.) 0.5 MM SQ. PIN (19 TYP.) AF AD AG U X P FO Br 19 15 VNCWN 13 18 VN1 14 VN 17 N L K WP VWP1 VP VVP1 UP VUP1 VWPC WFO VVPC VFO VUPC UFO 9 11 10 12 5 7 6 8 1 3 2 4 UN 16 Rfo GND In FO VCC GND In FO VCC GND In FO VCC GND In FO VCC GND FO In VCC GND FO In VCC GND FO In VCC GND Si GND Si OUT GND Si OUT GND Si OUT Features: ⵧ Complete Output Power Circuit TEMP GND Si Out GND Si Out GND Si Out Out Th ⵧ Gate Drive Circuit B N W V U ⵧ Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage P Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Inches Millimeters A 5.31±0.04 135.0±1.0 Dimensions S 0.69 17.5 B 4.74±0.02 120.5±0.5 T 0.65 16.5 C 4.33±0.04 110.0±1.0 U 0.52 13.2 D 4.27 10.5 V 0.43 11.0 E 3.76±0.02 95.5±0.5 W 0.39 10.0 F 3.29 83.5 X 0.31 8.0 G 2.01 51.0 Y 0.285 7.25 H 1.602 40.68 Z 0.24 6.0 J 1.54 39.0 AA 0.22 Dia. Dia. 5.5 K 1.37 34.7 AD Metric M5 M5 L 1.33 33.7 AC 0.128 3.22 M 1.02 26.0 AD 0.10 2.6 AE 0.08 2.0 1.8 N P 0.95 +0.06/-0.0 24.1 +1.5/-0.0 0.84 21.3 AF 0.07 Q 0.79 20.0 AG 0.06 1.6 R 0.780 19.82 AH 0.02 0.5 Applications: ⵧ Inverters ⵧ UPS ⵧ Motion/Servo Control ⵧ Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM200RSA060 is a 600V, 200 Ampere Intelligent Power Module. Type PM Current Rating Amperes VCES Volts (x 10) 200 60 Mar.2002 MITSUBISHI INTELLIGENT POWER MODULES PM200RSA060 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Symbol Ratings Units Tj -20 to 150 °C Storage Temperature Tstg -40 to 125 °C Case Operating Temperature TC -20 to 100 °C Mounting Torque, M5 Mounting Screws — 1.47 ~ 1.96 N·m Mounting Torque, M5 Main Terminal Screw — 1.47 ~ 1.96 N·m Module Weight (Typical) — Power Device Junction Temperature 920 Grams Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C) VCC(prot.) 400 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms VD Control Sector Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) 20 Volts Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN · Br-VNC) VCIN 20 Volts Fault Output Supply Voltage (Applied between UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC) VFO 20 Volts Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal) IFO 20 mA VCES 600 Volts IC 200 Amperes Peak Collector Current, ± ICP 400 Amperes Supply Voltage (Applied between P - N) VCC 450 Volts VCC(surge) 500 Volts PC 595 Watts VCES 600 Volts IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, ± Supply Voltage, Surge (Applied between P - N) Collector Dissipation Brake Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, (TC = 25°C) Peak Collector Current, (TC = 25°C) Supply Voltage (Applied between P - N) IC 75 Amperes ICP 150 Amperes VCC 450 Volts VCC(surge) 500 Volts Collector Dissipation PC 370 Watts Diode Forward Current IF 75 Amperes VR(DC) 600 Volts Supply Voltage, Surge (Applied between P - N) Diode DC Reverse Voltage Mar.2002 MITSUBISHI INTELLIGENT POWER MODULES PM200RSA060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units OC -20°C ≤ T ≤ 125°C, VD = 15V 310 400 — Amperes 115 161 — Amperes — 560 — Amperes — 241 — Amperes Control Sector Over Current Trip Level Inverter Part Over Current Trip Level Brake Part Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD = 15V Short Circuit Trip Level Brake Part Over Current Delay Time Over Temperature Protection Supply Circuit Under Voltage Protection toff(OC) VD = 15V — 10 — µs OT Trip Level 111 118 125 °C OTr Reset Level — 100 — °C UV Trip Level 11.5 12.0 12.5 Volts UVr Reset Level — 12.5 — Volts Supply Voltage VD Applied between VUP1-VUPC, 13.5 15 16.5 Volts Circuit Current ID — 52 72 mA VVP1-VVPC, VWP1-VWPC, VN1-VNC VD = 15V, VCIN = 15V, VN1-VNC VD = 15V, VCIN = 15V, VXP1-VXPC — 13 18 mA Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts UN · VN · WN · Br-VNC PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA IFO(L) VD = 15V, VFO = 15V — 10 15 mA tFO VD = 15V 1.0 1.8 — ms Minimum Fault Output Pulse Width Mar.2002 MITSUBISHI INTELLIGENT POWER MODULES PM200RSA060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current Diode Forward Voltage Collector-Emitter Saturation Voltage ICES VCE = VCES, Tj = 25°C — — 1.0 mA VCE = VCES, Tj = 125°C — — 10 mA VEC -IC = 200A, VD = 15V, VCIN = 5V — 1.9 2.8 Volts VCE(sat) VD = 15V, ICIN = 0V, IC = 200A — 1.8 2.7 Volts VD = 15V, VCIN = 0V, IC = 200A, — 1.75 2.63 Volts Tj = 125°C Inductive Load Switching Times 0.4 0.8 2.0 µs trr VD = 15V, VCIN = 0 ↔ 15V — 0.15 0.3 µs tC(on) VCC = 300V, IC = 200A — 0.4 1.0 µs toff Tj = 125°C — 2.0 2.9 µs — 0.6 1.2 µs — 1.8 2.7 Volts — 1.85 2.78 Volts IF = 75A, VD = 15V, VCIN = 5V — 1.7 2.5 Volts ton tC(off) Brake Sector Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 75A, Tj = 25°C VD = 15V, VCIN = 0V, IC = 75A, Tj = 125°C Diode Forward Voltage VFM Collector Cutoff Current ICES VCE = VCES, Tj = 25°C — — 1 mA VCE = VCES, Tj = 125°C — — 10 mA Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — — 0.21 °C/Watt Rth(j-c)F Each Inverter FWDi — — 0.35 °C/Watt Rth(j-c)Q Brake IGBT — — 0.33 °C/Watt Rth(j-c)F Brake FWDi — — 0.80 °C/Watt Rth(c-f) Case to Fin Per Module, — — 0.018 °C/Watt Contact Thermal Resistance Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage VCC Applied across P-N Terminals 0 ~ 400 Volts Applied between VUP1-VUPC, 15 ± 1.5 Volts VD VN1-VNC, VVP1-VVPC, VWP1-VWPC Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts Input OFF Voltage VCIN(off) UP-VUPC, VP-VVPC, WP-VWPC, 4.0 ~ VD Volts PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz Minimum Dead Time tDEAD Input Signal ≥ 2.5 µs UN · VN · WN · Br-VNC Mar.2002 MITSUBISHI INTELLIGENT POWER MODULES PM200RSA060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1 IC = 200A VCIN = 0V Tj = 25oC Tj = 125oC 15 100 200 300 VD = 17V 100 0 12 0 14 16 18 20 22 0 1 2 3 COLLECTOR CURRENT, IC, (AMPERES) SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 101 100 101 toff 100 ton 10-1 101 102 VCC = 300V VD = 15V Inductive Load Tj = 25oC Tj = 125oC 100 tc(off) tc(on) 10-1 101 103 REVERSE RECOVERY TIME, trr, (µs) SWITCHING TIMES, tc(on), tc(off), (µs) VCC = 300V VD = 15V Inductive Load Tj = 25oC Tj = 125oC 102 103 102 Irr trr 10-1 101 VCC = 300V VD = 15V Inductive Load Tj = 25oC Tj = 125oC 10-2 101 100 103 102 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR REVERSE CURRENT, –IC, (AMPERES) DIODE FORWARD CHARACTERISTICS OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) OVER CURRENT TRIP LEVEL TEMPERATURE DEPENDENCY (TYPICAL) 103 120 120 102 Tj = 25oC OVER CURRENT TRIP LEVEL % (NORMALIZED) OVER CURRENT TRIP LEVEL % (NORMALIZED) VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC 101 0.4 13 200 0 0 SWITCHING TIMES, ton, toff, (µs) 2 VCIN = 0V 100 80 60 40 20 10 0 0.8 1.2 1.6 2.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 2.4 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 1 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 2 0 COLLECTOR REVERSE CURRENT, –IC, (AMPERES) 300 3 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 3 OUTPUT CHARACTERISTICS (TYPICAL) 0 12 14 16 18 SUPPLY VOLTAGE, VD, (VOLTS) 20 VD = 15V 100 80 60 40 0 -50 0 50 100 150 JUNCTION TEMPERATURE, Tj, (oC) Mar.2002 MITSUBISHI INTELLIGENT POWER MODULES PM200RSA060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part UVt UVr VD = 15V 14 100 UV TRIP-RESET LEVEL, UVt, UVr, (VOLTS) FAULT OUTPUT PULSE WIDTH % (NORMALIZED) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 15 120 80 60 13 12 11 40 0 0 -50 0 50 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) 150 JUNCTION TEMPERATURE, Tj, (oC) -50 0 50 100 JUNCTION TEMPERATURE, Tj, (oC) 150 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.21oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 0.35oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Mar.2002 MITSUBISHI INTELLIGENT POWER MODULES PM200RSA060 FLAT-BASE TYPE INSULATED PACKAGE Brake Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC 2.5 2.0 1.5 1.0 0.5 0 100 2.5 2.0 1.5 1.0 Tj = 25oC VCIN = 0V 0.5 0 20 40 60 80 100 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 101 100 0 0.4 0.8 1.2 1.6 DIODE FORWARD VOLTAGE, VF, (VOLTS) VD = 17V 13 60 40 20 12 14 16 18 20 0 1 2.0 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.33oC/W 10-2 10-1 TIME, (s) 100 3 4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-3 10-3 2 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) DIODE FORWARD CHARACTERISTICS VD = 15V Tj = 25oC Tj = 125oC 15 80 SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 102 Tj = 25oC VCIN = 0V 0 0 101 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 0 DIODE FORWARD CURRENT, IF, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 3.0 OUTPUT CHARACTERISTICS (TYPICAL) 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 0.8oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Mar.2002