MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT-BASE TYPE INSULATED PACKAGE A D TYP DD BB C E R (2 REQD) AA E B X 1 2 3 4 5 W Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. TYP Q Sφ (4 HOLES) T F φK CC φL V SQ.(5 PLACES) TYP φM H P J G VI C Features: u Complete Output Power Circuit C 1 Rref VCC 1.5 OHM Rfo TEMP FO 5 FO OUT1 SR 2 SR OUT2 CI IN 3 VC 4 u Gate Drive Circuit SENS GND C1 300 pf Tm AMP u Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage SINK E Outline Drawing and Circuit Diagram Dimensions A Inches Millimeters Dimensions Inches Millimeters 3.94 100.0 Q 0.10 B 5.20 132.0 R M8 Metric M8 C 1.33 33.7 S φ 6.5 φ 6.5 D 3.23±0.010 82.0±0.25 T 0.24 26.0 E 4.33±0.010 110.0±0.25 U 0.26 6.5 F G 2.84 1.42+0.04/-0.02 2.54 72.0 V 0.25 0.64 36.0+1/-0.5 W 0.20 5.0 H 0.53 13.5 X 1.97 50.0 J 0.06 1.5 AA 0.71 18.0 K 0.17 4.4 BB 0.55 14.0 L 0.15 3.8 CC 0.39 10.0 DD 1.14. 29.0 M 0.06 1.5 N 0.35 9.0 P 0.53 13.5 Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM800HSA120 is a 1200V, 800 Ampere Intelligent Power Module. Type PM Current Rating Amperes VCES Volts (x 10) 800 120 Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Symbol Ratings Units Tj -20 to 150 °C Storage Temperature Tstg -40 to 125 °C Case Operating Temperature TC -20 to 100 °C Mounting Torque, M6 Mounting Screws — 3.92 ~ 5.88 N·m Mounting Torque, M8 Main Terminal Screws — 8.83 ~ 10.8 N·m Power Device Junction Temperature Module Weight (Typical) Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) — 1170 Grams VCC(prot.) 800 Volts Viso 2500 Vrms Control Sector Supply Voltage Applied between (V 1-VC) VD 20 Volts VCIN 10 Volts VFO 20 Volts IFO 20 mA VCES 1200 Volts IC 800 Amperes Peak Collector Current, (TC = 25°C) ICP 1600 Amperes Collector Dissipation PC 4630 Watts Input Voltage Applied between (C 1-VC) Fault Output Supply Voltage (Applied between Fo-Vc) Fault Output Current (Fault Current of FO Terminal) IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 5V) Collector Current, (TC = 25°C) Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, T j = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Over Current Trip Level Inverter Part OC -20°C ≤ Tj ≤ 125°C, VD = 15V 1060 1300 — Amperes Short Circuit Trip Level Inverter Part SC -20°C ≤ Tj ≤ 125°C, VD = 15V 1350 1700 — Amperes t off(OC) VD = 15V — 5 — µs OT Trip Level 100 110 120 °C OTr Reset Level 85 95 105 °C UV Trip Level 11.5 12.0 12.5 Volts Control Sector Over Current Delay Time Over Temperature Protection Supply Circuit Under Voltage Protection Supply Voltage Circuit Current UV r Reset Level — 12.5 — Volts VD Applied between V1-VC 13.5 15 16.5 Volts ID VD = 15V, VCIN = 5V, V1-VC — 23 40 mA Input ON Threshold Voltage VCIN(on) Applied between C1-VC 1.2 1.5 1.8 Volts Input OFF Threshold Voltage VCIN(off) Applied between C1-VC 1.7 2.0 2.3 Volts PWM Input Frequency f PWM 3-φ Sinusoidal — 15 20 kHz Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA IFO(L) VD = 15V, VFO = 15V — 10 15 mA Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 — ms SR Terminal Output Voltage VSR -20°C ≤ Tj ≤ 125°C, Rin = 6.8kΩ 4.5 5.1 5.6 Volts Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current Emitter-Collector Voltage Collector-Emitter Saturation Voltage ICES VCE = VCES, Tj = 25°C — — 1.0 mA VCE = VCES, Tj = 125°C — — 10 mA VEC -IC = 800A, VD = 15V, VCIN = 5V — 2.6 3.5 Volts VCE(sat) VD = 15V, VCIN = 0V, IC = 800A, — 2.5 3.5 Volts — 2.3 3.3 Volts 0.5 1.4 2.5 µs Tj = 25°C VD = 15V, VCIN = 0V, IC = 800A, Tj = 125°C Inductive Load Switching Times ton trr VD = 15V, VCIN = 0 ↔ 5V — 0.2 0.4 µs tC(on) VCC = 600V, IC = 800A — 0.4 1.0 µs toff Tj = 125°C — 3.0 4.0 µs — 0.6 1.1 µs tC(off) Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance Rth(j-c)Q Each IGBT — — 0.027 °C/Watt Rth(j-c)F Each FWDi — — 0.045 °C/Watt Rth(c-f) Case to Fin Per Module, — — 0.022 °C/Watt Contact Thermal Resistance Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage VCC Applied across C1-E2 Terminals 0 ~ 800 Volts VD Applied between V1-VC 15 ± 1.5 Volts Input ON Voltage VCIN(on) Applied between C1-VC 0 ~ 0.8 Volts Input OFF Voltage VCIN(off) Applied between C1-VC 4.0 ~ VSR Volts PWM Input Frequency f PWM Using Application Circuit 5 ~ 20 kHz Minimum Dead Time tdead Input Signal ≥ 4.0 µs Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT-BASE TYPE INSULATED PACKAGE COLLECTOR-EMITTER SATURATON VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 1.0 VD = 15V VCIN = 0V Tj = 25°C Tj = 125°C 0 2.0 1.0 IC = 800A VCIN = 0V Tj = 25°C Tj = 125°C 200 400 600 800 1000 Tj = 25oC VCIN = 0V VD = 17V 15 600 13 400 200 0 0 0 0 13 15 0 17 1.0 2.0 3.0 COLLECTOR CURRENT, IC, (AMPERES) SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCEsat, (VOLTS) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 101 ton 100 VCC = 600V VD = 15V Inductive Load Tj = 25°C Tj = 125°C 10-1 102 103 103 COLLECTOR CURRENT, IC, (AMPERES) 101 VCC = 600V VD = 15V Inductive Load Tj = 25°C Tj = 125°C 100 tc(off) tc(on) 10-1 101 103 Irr REVERSE RECOVERY TIME, trr, (µs) toff SWITCHING TIMES, tc(on), tc(off), (µs) 101 SWITCHING TIMES, ton, toff, (µs) 800 COLLECTOR CURRENT, IC, (AMPERES) 2.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE, VCE(sat), (VOLTS) 3.0 OUTPUT CHARACTERISTICS (TYPICAL) 102 COLLECTOR CURRENT, IC, (AMPERES) 103 102 100 trr 10-1 10-2 102 VCC = 600V VD = 15V Inductive Load Tj = 25°C Tj = 125°C 103 101 100 104 REVERSE RECOVERY CURRENT, Irr, (AMPERES) SATURATON VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) DIODE FORWARD CHARACTERISTICS COLLECTOR REVERSE CURRENT,-IE, (AMPERES) 103 VD = 15V VCIN = 5V Tj = 25°C Tj = 125°C 102 101 0 1.0 2.0 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM800HSA120 FLAT-BASE TYPE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.027°C/W 10-3 10-3 10-2 10-1 100 10 1 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 0.045°C/W 10-3 10-3 10-2 10-1 100 10 1 TIME, (s) TIME, (s) OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) OVER CURRENT TRIP LEVEL VS. TEMPERATURE DEPENDENCY (TYPICAL) 1.2 1.4 Tj = 25°C OVER CURRENT TRIP LEVEL % (NORMALIZED) OVER CURRENT TRIP LEVEL % (NORMALIZED) 101 1.0 0.8 0 0 13 15 17 SUPPLY VOLTAGE, VD, (VOLTS) 1.2 1.0 0.8 VD = 15V 0 20 100 JUNCTION TEMPERATURE, Tj, (°C) 180 FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) FAULT OUTPUT PULSE WIDTH % (NORMALIZED) 101 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) 1.2 1.0 0.8 VD = 15V 0 20 100 180 JUNCTION TEMPERATURE, Tj, (°C) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDANCY (TYPICAL) UV TRIP-RESET LEVEL, UVt, UVr, (VOLTS) 15 VD = 15V UVt UVr 13 11 0 20 100 180 JUNCTION TEMPERATURE, Tj, (°C) Sep.2000