KSB1149 KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C • High DC Current Gain • High Power Dissipation : PC=1.3W (Ta=25°C) TO-126 1 1. Emitter 2.Collector 3.Base PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value - 100 Units V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage -8 V IC Collector Current (DC) -3 A ICP *Collector Current (Pulse) -5 A PC Collector Dissipation (Ta=25°C) 1.3 W PC Collector Dissipation (TC=25°C) 15 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = - 100V, IE = 0 Min. Typ. Max. - 10 Units µA -2 mA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 hFE1 hFE2 * DC Current Gain VCE = - 2V, IC = - 1.5A VCE = - 2V, IC = - 3A VCE(sat) * Collector-Emitter Saturation Voltage IC = - 1.5A, IB = - 1.5mA - 0.9 - 1.2 V VBE(sat) * Base-Emitter Saturation Voltage IC = - 1.5A, IB = - 1.5mA - 1.5 -2 V tON Turn ON Time µs Storage Time 2 µs tF Fall Time VCC = - 40V, IC = - 1.5A IB1 = - IB2 = - 1.5mA RL = 27Ω 0.5 tSTG 1 µs 2000 1000 20000 * Pulse test: PW≤350µs, duty Cycle≤2% Pulsed hFE Classification Classification O Y G hFE1 2000 ~ 5000 4000 ~ 12000 6000 ~ 20000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1149 Typical Characteristics -5 100000 IB = -1 m A -4 VCE = -2V Pulsed IB=-500uA IB =-400uA IB=-800uA IB =-300uA hFE, DC CURRENT GAIN Ic[A], COLLECTOR CURRENT IB=-900uA IB=-700uA IB=-200uA IB =-600uA -3 IB=-100uA -2 -1 -0 -0 -1 -2 -3 -4 10000 1000 100 -0.01 -5 -0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE -10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -100 -10 Ic = 1000 IB Pulsed Ic(Pulse) -10 20 ati on -1 10 0m m s s Lim ite d d VCE (sat) sip ite Lim VBE(sat) -1 Dis s/b IC[A], COLLECTOR CURRENT Ic(DC) s 0u 10 us 0 30 s 1m VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 -0.1 o Tc=25 C Single Pulse -0.01 -0.1 -0.1 -1 -1 -10 -10 -100 500 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Forward Bias Safe Operating Area 20 160 PC[W], POWER DISSIPATION 140 dT[%], Ic DERATING 120 100 80 s/b DI 60 40 LIM ITE D SS IP A TI O 20 N LI M IT ED 15 10 5 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 5. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSB1149 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E