BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO *Collector-Base Voltage Parameter : BD175 : BD177 : BD179 Value 45 60 80 Units V V V VCEO Collector-Emitter Voltage : BD175 : BD177 : BD179 45 60 80 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 3 A ICP *Collector Current (Pulse) 7 A PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICBO Parameter * Collector-Emitter Sustaining Voltage : BD175 : BD177 : BD179 Collector Cut-off Current : BD175 : BD177 : BD179 Test Condition IC = 100mA, IB = 0 Min. IEBO Emitter Cut-off Current VEB = 5V, IC = 0 * DC Current Gain VCE = 2V, IC = 150mA VCE = 2V, IC = 1A Max. 45 60 80 VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 hFE1 hFE2 Typ. 40 15 Units V V V 100 100 100 µA µA µA 1 mA 250 VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.1A 0.8 V VBE(on) * Base-Emitter On Voltage VCE = 2V, IC = 1A 1.3 V fT Current Gain Bandwidth Product VCE = 10V, IC = 250mA 3 MHz * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed hFE Classificntion Classification 6 10 16 hFE1 40 ~ 100 63 ~ 160 100 ~ 250 * Classification 16: Only BD175 ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD175/177/179 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = 2V 100 10 1 0.01 0.1 1 10 10 IC = 10 IB V BE(sat) 1 V CE(sat) 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 40 10 10µ s IC MAX. (Pulsed) 35 PC[W], POWER DISSIPATION µs s DC 1m 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area ©2000 Fairchild Semiconductor International BD179 BD177 1 BD175 IC[A], COLLECTOR CURRENT 0 10 IC MAX. (Continuous) 30 25 20 15 10 5 0 100 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 4. Power Derating Rev. A, February 2000 BD175/177/179 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E