KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking 1 2 9 8 2 P Y W W SOT-89 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 30 V VCES Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter Base Voltage 6 V IC Collector Current (DC) 2 A ICP Collector Current (Pulse) * IB Base Current (DC) IBP Base Current (Pulse) * PC P C* Collector Power Dissipation TJ TSTG 4 A 0.4 A 0.8 A 500 1,000 mW mW Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C * PW ≤ 10ms, Duty Cycle ≤ 30% Mounted on Ceramic Board (250mm2 x 0.8mm) ©2005 Fairchild Semiconductor Corporation KSC2982 Rev. B3 1 www.fairchildsemi.com KSC2982 NPN Epitaxial Silicon Transistor July 2005 Symbol a= 25°C unless otherwise noted Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage BVEBO ICBO Min. IC = 10mA, IB = 0 10 Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 6 Collector Cut-off Current VCB = 30V, IE = 0 IEBO Emitter Cut-off Current VBE = 6V, IC = 0 hFE1 hFE2 DC Current Gain VCE = 1V, IC = 0.5A VCE = 1V, IC = 2A Typ. Max. Units V V 140 70 100 nA 100 nA 600 140 VCE (sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 50mA 0.2 0.5 V VBE (on) Base-Emitter On Voltage VCE = 1V, IC = 2A 0.86 1.5 V fT Current Gain Bandwidth Product VCE = 1V, IC = 2A 150 MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 27 pF hFE Classification Classification A B C D hFE1 140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 2982 KSC2982 SOT-89 13” -- 4,000 KSC2982 Rev. B3 2 www.fairchildsemi.com KSC2982 NPN Epitaxial Silicon Transistor Electrical Characteristics T Figure 1. Static Characteristic 1,000 IB = 60mA IB = 25mA VCE=1V IB = 15mA 3 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 4 Figure 2. DC Current Gain IB = 10mA 2 IB = 5mA 1 0 IB = 0mA 0 1 2 3 100 10 0.01 4 VCE[V], COLLECTOR-EMITTER VOLTAGE PC[W], POWER DISSIPATION VCE(sat)[V], SATURATION VOLTAGE 1.6 0.1 0.1 10 Figure 4. Base-Emitter On Voltage IC=10 IB 0.01 0.01 1 IC[A], COLLECTOR CURRENT Figure 3. DCollector-Emitter Saturation Voltage 1 0.1 1 1.2 0.8 on Ce ra m ic Bo ar d 0.4 0.0 10 M ou nt ed 0 50 (2 50 m m 2 × 0. 8m m ) 100 150 200 o IC[A], COLLECTOR CURRENT TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating 10 1.6 o 10 0m s 10 m s PC[W], POWER DISSIPATION IC MAX. (DC) TA=25 C Single Pulse 1 0.1 0.01 0.1 VCEO MAX. IC[A], COLLECTOR CURRENT IC MAX. (Pulse) 1 10 M ou nt ed 0.8 on 0.4 0.0 100 0 50 Ce ra m ic Bo ar d (2 50 m m2 × 100 0. 8m m ) 150 200 o VCE[V], COLLECTOR-EMITTER VOLTAGE KSC2982 Rev. B3 1.2 TC[ C], CASE TEMPERATURE 3 www.fairchildsemi.com KSC2982 NPN Epitaxial Silicon Transistor Typical Performance Characteristics KSC2982 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters KSC2982 Rev. B3 4 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 KSC2982 Rev. B3 www.fairchildsemi.com KSC2982 NPN Epitaxial Silicon Transistor TRADEMARKS