FAIRCHILD KSC2982_05

KSC2982
NPN Epitaxial Silicon Transistor
Strobe Flash & Medium Power Amplifier
• Excellent hFE Linearity : hFE1=140 ~ 600
• Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V
• Collector Dissipation : PC=1~2W in Mounted on Ceramic Board
Marking
1
2 9
8 2
P Y
W W
SOT-89
Weekly code
Year code
hFE grage
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
30
V
VCES
Collector-Emitter Voltage
30
V
VCEO
Collector-Emitter Voltage
10
V
VEBO
Emitter Base Voltage
6
V
IC
Collector Current (DC)
2
A
ICP
Collector Current (Pulse) *
IB
Base Current (DC)
IBP
Base Current (Pulse) *
PC
P C*
Collector Power Dissipation
TJ
TSTG
4
A
0.4
A
0.8
A
500
1,000
mW
mW
Junction Temperature
150
°C
Storage Temperature
-55 ~ 150
°C
* PW ≤ 10ms, Duty Cycle ≤ 30%
Mounted on Ceramic Board (250mm2 x 0.8mm)
©2005 Fairchild Semiconductor Corporation
KSC2982 Rev. B3
1
www.fairchildsemi.com
KSC2982 NPN Epitaxial Silicon Transistor
July 2005
Symbol
a=
25°C unless otherwise noted
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
ICBO
Min.
IC = 10mA, IB = 0
10
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
6
Collector Cut-off Current
VCB = 30V, IE = 0
IEBO
Emitter Cut-off Current
VBE = 6V, IC = 0
hFE1
hFE2
DC Current Gain
VCE = 1V, IC = 0.5A
VCE = 1V, IC = 2A
Typ.
Max.
Units
V
V
140
70
100
nA
100
nA
600
140
VCE (sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 50mA
0.2
0.5
V
VBE (on)
Base-Emitter On Voltage
VCE = 1V, IC = 2A
0.86
1.5
V
fT
Current Gain Bandwidth Product
VCE = 1V, IC = 2A
150
MHz
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
27
pF
hFE Classification
Classification
A
B
C
D
hFE1
140 ~ 240
200 ~ 330
300 ~ 450
420 ~ 600
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2982
KSC2982
SOT-89
13”
--
4,000
KSC2982 Rev. B3
2
www.fairchildsemi.com
KSC2982 NPN Epitaxial Silicon Transistor
Electrical Characteristics T
Figure 1. Static Characteristic
1,000
IB = 60mA
IB = 25mA
VCE=1V
IB = 15mA
3
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
4
Figure 2. DC Current Gain
IB = 10mA
2
IB = 5mA
1
0
IB = 0mA
0
1
2
3
100
10
0.01
4
VCE[V], COLLECTOR-EMITTER VOLTAGE
PC[W], POWER DISSIPATION
VCE(sat)[V], SATURATION VOLTAGE
1.6
0.1
0.1
10
Figure 4. Base-Emitter On Voltage
IC=10 IB
0.01
0.01
1
IC[A], COLLECTOR CURRENT
Figure 3. DCollector-Emitter Saturation Voltage
1
0.1
1
1.2
0.8
on
Ce
ra
m
ic
Bo
ar
d
0.4
0.0
10
M
ou
nt
ed
0
50
(2
50
m
m
2
×
0.
8m
m
)
100
150
200
o
IC[A], COLLECTOR CURRENT
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
10
1.6
o
10
0m
s
10
m
s
PC[W], POWER DISSIPATION
IC MAX. (DC)
TA=25 C
Single Pulse
1
0.1
0.01
0.1
VCEO MAX.
IC[A], COLLECTOR CURRENT
IC MAX. (Pulse)
1
10
M
ou
nt
ed
0.8
on
0.4
0.0
100
0
50
Ce
ra
m
ic
Bo
ar
d
(2
50
m
m2
×
100
0.
8m
m
)
150
200
o
VCE[V], COLLECTOR-EMITTER VOLTAGE
KSC2982 Rev. B3
1.2
TC[ C], CASE TEMPERATURE
3
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KSC2982 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
KSC2982 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-89
1.50 ±0.20
4.50 ±0.20
(0.40)
4.10
(1.10)
2.50
±0.20
C0.2
±0.20
(0.50)
1.65 ±0.10
0.50 ±0.10
0.40 ±0.10
0.40
+0.10
–0.05
1.50 TYP 1.50 TYP
Dimensions in Millimeters
KSC2982 Rev. B3
4
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As used herein:
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or sustain life, or (c) whose failure to perform when properly used
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
5
KSC2982 Rev. B3
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KSC2982 NPN Epitaxial Silicon Transistor
TRADEMARKS