September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control. -2.5A, -60V. RDS(ON) = 0.3Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________________________ D D G Absolute Maximum Ratings D S G S T A = 25°C unless otherwise noted Symbol Parameter NDT2955 Units VDSS Drain-Source Voltage -60 V VGSS Gate-Source Voltage ±20 V ID Drain Current -2.5 A - Continuous (Note 1a) - Pulsed PD TJ,TSTG Maximum Power Dissipation -15 (Note 1a) 3 (Note 1b) 1.3 (Note 1c) 1.1 Operating and Storage Temperature Range W -65 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W * Order option J23Z for cropped center drain lead. © 1997 Fairchild Semiconductor Corporation NDT2955 Rev. B2 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min -60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -60 V, VGS = 0 V V o TJ = 125 C -10 µA -100 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA o TJ = 125 C RDS(ON) Static Drain-Source On-Resistance -2 -2.4 -4 -0.8 -2 -2.6 VGS = -10 V, ID = -2.5 A TJ = 125oC VGS = -4.5 V, ID = -2 A 0.21 0.3 0.3 0.45 0.36 0.5 -12 Ω ID(on) On-State Drain Current VGS = -10 V, VDS = -5 V A gFS Forward Transconductance VDS = -10 V, ID = -2.5 A 3.5 S VDS = -25 V, VGS = 0 V, f = 1.0 MHz 570 pF 140 pF 40 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 V, ID = -1 A, VGEN = -10 V, RGEN = 6 Ω VDS = -30 V, ID = -2.5 A, VGS = -10 V 8 15 ns 20 40 ns 20 40 ns 5 20 ns 16 25 nC 2 5 nC 4 8 nC NDT2955 Rev. B2 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units -2.3 A -1.3 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.5 A (Note2) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. PD (t ) = T J −TA R θJ A(t ) = T J −TA R θJ C+RθCA(t ) = I 2D (t ) × RDS (ON ) TJ Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 42oC/W when mounted on a 1 in2 pad of 2oz copper. b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDT2955 Rev. B2 Typical Electrical Characteristics 3 -12 GS = -10V -8.0 V -7.0 GS -9 R DS(on), NORMALIZED I D , DRAIN-SOURCE CURRENT (A) -6.0 -5.5 -5.0 -6 -4.5 -3 -4.0 DRAIN-SOURCE ON-RESISTANCE V = -4.0V -4.5 -5.0 2.5 -5.5 2 -6.0 1.5 -7.0 -8.0 1 -10 -3.5 0 0 -1 -2 -3 -4 VDS , DRAIN-SOURCE VOLTAGE (V) -5 0.5 -6 0 Figure 1. On-Region Characteristics. -15 V GS = -10 V R DS(ON), NORMALIZED V GS = -10V 1.2 1 0.8 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) 125 DRAIN-SOURCE ON-RESISTANCE 1.4 2 TJ = 125°C 25°C 1 -55°C 0 150 0 -3 -6 I J D -9 -12 -15 , DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 3. On-Resistance Variation with Temperature. 1.2 -10 V DS = -10V T = -55°C J 25°C 125°C V th, NORMALIZED -8 -6 -4 -2 0 -2 -3 V GS -4 -5 -6 , GATE TO SOURCE VOLTAGE (V) Figure 5. Drain Current Variation with Gate Voltage and Temperature. -7 GATE-SOURCE THRESHOLD VOLTAGE (V) R DS(ON), NORMALIZED -12 3 I D = -2.5A 0.6 -50 ID , DRAIN CURRENT (A) -6 -9 ID , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 DRAIN-SOURCE ON-RESISTANCE -3 V DS = V GS 1.1 I D = -250µA 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (°C) 125 150 Figure 6. Gate Threshold Variation with Temperature. NDT2955 Rev. B2 Typical Electrical Characteristics (continued) 10 5 I D = -250µA -I S , REVERSE DRAIN CURRENT (A) BV DSS, NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 1.15 1.1 1.05 1 0.95 0.9 -50 -25 0 TJ 25 50 75 100 , JUNCTION TEMPERATURE (°C) 125 V GS = 0V 1 125°C 0.5 25°C T J = -55°C 0.1 0.01 0.001 -0.3 150 -0.6 -0.9 V SD Figure 7. Breakdown Voltage Variation with Temperature. -1.8 -2.1 10 C iss , GATE-SOURCE VOLTAGE (V) 300 C oss 200 100 30 V GS = 0V 20 0.1 C rss GS f = 1 MHz -30V 8 -20V 6 4 2 -V 50 VDS = -10V IDS = -2.5A 500 CAPACITANCE (pF) -1.5 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature 1000 0 0.2 0.5 1 2 5 10 -V DS , DRAIN TO SOURCE VOLTAGE (V) 20 0 50 5 15 20 Figure 10. Gate Charge Characteristics. -VDD ton t d(on) t off tr RL V IN 10 Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics. t d(off) tf 90% 90% V OUT D VGS -1.2 , BODY DIODE FORWARD VOLTAGE (V) VOUT R GEN 10% 10% DUT G 90% S V IN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. INVERTED Figure 12. Switching Waveforms. NDT2955 Rev. B2 Typical Electrical Characteristics (continued) 20 TJ = -55°C V DS = -15V 10 0 1m us s 10 5 -I D, DRAIN CURRENT (A) 25°C 4 125°C 2 2 R ( DS ON IM )L IT 10 10 1 0m 1s 10 s DC 0.5 m s s V GS = -10V 0.1 SINGLE PULSE 0.05 R θJ A = 42 o C/W T A = 25°C g FS , TRANSCONDUCTANCE (SIEMENS) 6 0 0 -2 -4 -6 I D , DRAIN CURRENT (A) -8 -10 0.01 0.1 0.2 0.5 1 2 5 10 60 100 - V DS , DRAIN-SOURCE VOLTAGE (V) Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 R JA (t) = r(t) * R JA θ θ R JA = See Note 1 c θ P(pk) 0.01 t1 0.005 (t) θJA Duty Cycle, D = t 1 / t 2 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDT2955 Rev. B2